DISCRETE SEMICONDUCTORS DATA SHEET M3D727 BGY282 dual band UHF amplifier module for GSM900 and GSM1800 Preliminary specification 2001 Dec 04 Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 BGY282 PINNING - SOT632A FEATURES • Dual band GSM amplifier PIN DESCRIPTION • 3.5 V nominal supply voltage 1 RF input 1 (GSM900) • 33 dBm output power for GSM1800 2 VAPC • 35 dBm output power for GSM900 3, 6, 9, 12 Ground • Easy output power control by DC voltage 4 VS1 (GSM900) • Internal input and output matching 5 RF output 1 (GSM900) • Easy band selection by DC voltage 7 RF output 2 (GSM1800) • Suited for GPRS class 12 (duty cycle 4 : 8). APPLICATIONS 8 VS2 (GSM1800) 10 Vband 11 RF input 2 (GSM1800) • Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in two frequency bands: 880 to 915 MHz and 1710 to 1785 MHz. 1 2 3 4 5 12 6 DESCRIPTION The BGY282 is a power amplifier module in a SOT632A surface mounted ceramic package with a plastic cap. The module consists of two separated line-ups, one for GSM900 and one for GSM1800 with internal power control, input and output matching. 11 10 9 8 7 Bottom view MBL253 Fig.1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; δ = 1 : 8 2001 Dec 04 VS (V) VAPC (V) PL (dBm) η (%) ZS , ZL (Ω) 880 to 915 3.5 ≤2.2 typ. 35 50 50 1710 to 1785 3.5 ≤2.2 typ. 33 45 50 f (MHz) 2 Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 BGY282 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VAPC = 0; RFIN = off − 7 V VAPC > 0.5 V; RFIN = on − 5.5 V DC control voltage − 3 V input drive power − 10 dBm PL1 load power 1 (GSM900) − 36 dBm − 35 dBm − 35 dBm VS1, VS2 DC supply voltage VAPC PD1, PD2 δ = 4 : 8; VSWRout > 2 : 1 PL1 load power 1 (GSM900) PL2 load power 2 (GSM1800) PL2 load power 2 (GSM1800) δ = 4 : 8; VSWRout > 2 : 1 − 34 dBm PS1 total power from supply during pulse (GSM900) δ=4:8 − 7.5 W PS2 total power from supply during pulse (GSM1800) δ=4:8 − 4.5 W Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −30 +90 °C Note: PL is forward power, measured in a coupler. 2001 Dec 04 3 Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 BGY282 CHARACTERISTICS ZS = ZL = 50 Ω; PD1,2 = 0 dBm; VS1 = VS2 = 3.5 V; VAPC ≤ 2.2 V; T mb = 25 °C; tp = 575 µs; δ = 1 : 8; f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); measured on demoboard of fig 7; unless otherwise specified. SYMBOL Vband PARAMETER band switch voltage Iband band switch current IL leakage current CONDITIONS MIN. TYP. MAX. UNIT GSM1800 selected 0 − 0.7 V GSM900 selected 1.7 − 5.5 V − − 30 µA − − 10 µA ICM1, ICM2 peak control current − − 2 mA PD1 input drive power (GSM900) −3 − 4 dBm PD2 input drive power (GSM1800) VAPC = 0.2 V; PD1,2 = 0 mW −3 2 5 dBm VAPC = 2.2 V 34.7 35 − dBm VAPC = 2.2 V; VS1 = 3.1 V 34.2 34.5 − dBm PL1 load power GSM900 PL2 load power GSM1800 η1 efficiency GSM900 η2 efficiency GSM1800 VAPC = 2 V 38 harmonics GSM900 PL1 = 34.7 dBm − harmonics GSM1800 PL2 = 32.3 dBm − − VS1,2 = 3.1 to 4.4 V; PD1,2 = 0 dBm; PL1 = 5 to 34.7 dBm; PL2 = 0 to 32.3 dBm − 3:1 input VSWR of active device VS1,2 = 3.1 to 5.15 V; VAPC ≤ 0.5 V − 8:1 H2, H3 VSWRin input VSWR of inactive device stability isolation VAPC = 2.2 V 32.3 33 − dBm VAPC = 2.2 V; VS1 = 3.1 V 31.7 32.3 − dBm VAPC = 2 V 43 50 − % 45 − % − −38 dBc −35 dBc − VS1,2 = 3 to 5 V; PD1 = 0 to 3 dBm; PD2 = 0 to 5 dBm; PL1 = <35 dBm; PL2 = <33 dBm; VSWR = 6 : 1 through all phases − −60 dBc VS1,2 = 3.1 to 4.2 V; PD1 = 0 to 3 dBm; − PD2 = 0 to 5 dBm; PL1 = <34 dBm; PL2 = <32 dBm; VSWR = 6 : 1 through all phases; δ = 4 : 8 − −60 dBc − − −36 dBm − − −20 dBm VAPC = 0.5 V; PD1 = 3 dBm; PD2 = 5 dBm second harmonic isolation PL1 = 34.7 dBm from GSM900 into GSM1800 maximum control slope −5 dBm < PL1,2 < PL max 120 − 200 dB/V tr carrier rise time PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm; time to settle within −0.5 dB of final PL − 1.5 2 µs tf carrier fall time PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm; time to settle within −0.5 dB of final PL − 1.5 2 µs 2001 Dec 04 4 Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 SYMBOL PARAMETER CONDITIONS MIN. BGY282 TYP. MAX. UNIT PL1 ≤ 34 dBm; bandwidth = 100 kHz; f = 925 MHz − − −71 dBm PL1 ≤ 34 dBm; bandwidth = 100 kHz; f = 935 MHz − − −80 dBm noise power GSM1800 PL2 ≤ 32 dBm; bandwidth = 100 kHz; f = 1805 MHz − − −76 dBm AM/PM conversion PD1,2 = −0.5 to 0.5 dBm; PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm; PL1,2 = constant during measurement − − 6 deg/dB AM/AM conversion PD1,2 = 4 %; f = 100 kHz; PL1 = 5 to 34.7 dBm; PL2 = 0 to 32.3 dBm − − 30 % CG conversion gain GSM900 PD1 = 0 dBm @ 915 MHz; PL1 = 34 dBm; Pi1 = −50 dBm @ 905 MHz; CG = P925 − Pi1 − 25 − dB CG conversion gain GSM1800 PD2 = 0 dBm @ 1785 MHz; PL2 = 32 dBm; Pi2 = −50 dBm @ 1765 MHz; CG = P1805 − Pi2 − 25 − dB 3 dB control bandwidth GSM900, GSM1800 PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm 0.5 − − MHz power drop 4 slot burst GSM900, GSM1800 VAPC = 2.2 V; difference PL with δ = 1 : 8 and δ = 4 : 8 − − 0.4 dB noise power GSM900 Pn ruggedness 2001 Dec 04 VS1,2 = 5 V; PD1 = 0 to 3 dBm; PD2 = 0 to 5 dBm; PL1 = <35 dBm; PL2 = <33 dBm; VSWR ≤6 : 1 through all phases no degradation VS1,2 = 4.2 V; PD1 = 0 to 3 dBm; PD2 = 0 to 5 dBm; PL1 = <35 dBm; PL2 = <33 dBm; VSWR ≤10 : 1 through all phases no degradation VS1,2 = 4.2 V; PD1 = 0 to 3 dBm; PD2 = 0 to 5 dBm PL1 = <34 dBm; PL2 = <32 dBm; VSWR ≤6 : 1 through all phases; δ = 4 : 8 no degradation 5 Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 40 PL (dBm) 30 (1) BGY282 50 (2) η (%) (3) (4) 1785 MHz 40 1710 MHz 20 (3) 10 915 MHz 30 (4) 880 MHz 0 20 (1) -10 (2) 10 -20 -30 0 1 1.5 2 (1) = 880 MHz (3) = 1710 MHz (2) = 915 MHz (4) = 1785 MHz 2.5 VC (V) 20 25 30 35 40 PL (dBm) Z S = Z L = 50 Ω; VS = 3.5 V; P D = 0 dBm; T mb = 25 °C; δ = 1 : 8; tp = 575 µs. ZS = Z L = 50 Ω; VS = 3.5 V; P D = 0 dBm; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs. Fig.2 Fig.3 Load power as a function of control voltage; typical values. Efficiency as a function of load power; typical values. -20 H3 (dBc) -30 -20 H2 (dBc) 1710 MHz 1785 MHz -40 -40 880 MHz 915 MHz -50 880 MHz 915 MHz -60 -60 1710 MHz 1785 MHz -70 -80 -80 20 25 30 35 20 40 PL (dBm) 25 30 ZS = Z L = 50 Ω; VS = 3.5 V; P D = 0 dBm; Z S = Z L = 50 Ω; VS = 3.5 V; P D = 0 dBm; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs. T mb = 25 °C; δ = 1 : 8; tp = 575 µs. Fig.4 Fig.5 Second harmonic as a function of load power; typical values. 2001 Dec 04 6 35 40 PL (dBm) Third harmonic as a function of load power; typical values. Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 BGY282 APPLICATION INFORMATION PAM1 6 GND DCS out 8 +VS C2 RF output 1 7 RF output 2 Z0 VS2 VS1 5 Z0 4 +VS C4 C3 9 GND GND Vband Vapc 3 C8 C7 10 VB DCS in Z0 C1 2 1 11 RF output 2 RF output 1 VC Z0 RF in GND 12 Fig.6 Test circuit. List of components QUANTITY LOCATION VALUE / TYPE 1 1 DESCRIPTION REMARK PCB PAM1 BGY282 4 SUPPLIER Roland Haefele Power amplifier module Jack assembly end launch Type no. 142-0701-881 SMA connector Johnson Components 1 C1 100 µF / 35 V Electrol. capacitor Type no. ECEV1VA101P Matsushita 1 C2 100 µF / 35 V Electrol. capacitor Type no. ECEV1VA101P Matsushita 1 C3 100 nF 0805 size SMD capacitor 1 C4 100 nF 0805 size SMD capacitor 1 C7 680 pF 0603 size SMD capacitor 1 C8 100 pF 0603 size SMD capacitor 1 R1 100 Ohms / 0.1 W 0805 size SMD resistor 4 Z0 50 Ω stripline; note 1 width 1.4 mm Note 1. The striplines are on a double etched printed circuit board (εr = 4.6); thickness 0.8 mm 2001 Dec 04 7 Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 BGY282 TOP VIEW Fig.7 PCB test circuit. SOLDERING The indicated temperatures are those at the solder interfaces. MGM159 300 handbook, halfpage T (°C) Advised solder types are types with a liquidus less or equal to 210 °C. 200 Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. A double reflow process can be used. Hand soldering is not recommended because of the nature of the contacts. 100 The maximum allowed temperature is 250 °C for a maximum of 5 seconds. The maximum ramp-up is 10 °C per second. 0 0 The maximum cool-down is 5 °C per second. 1 2 3 4 t (min) 5 Fig.8 Recommended reflow temperature profile. 2001 Dec 04 8 Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 Fig.9 Soldering footprint for SOT632A. 2001 Dec 04 9 BGY282 Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 BGY282 PACKAGE OUTLINE Leadless surface mounted package; plastic cap; 12 terminations ZD (2×) SOT632A e1 (4×) e (4×) 1 Z5 (4×) Z (2×) 2 3 4 5 e2 (2×) 12 6 Z2 (6×) Z7 (4×) Z4 (8×) L (12×) 11 b (8×) 10 9 b1 (4×) 8 7 Z8 Dimensions of terminations Z1 (4×) Z3 (2×) Z9 Z6 (4×) Dimensions of solderresist D D1 A c E1 E pin 1 index 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b mm 1.8 1.4 1.5 1.4 OUTLINE VERSION b1 c D D1 E 3.75 0.61 14.05 13.35 8.3 3.65 0.49 13.45 13.05 7.7 E1 e 7.85 7.55 e1 e2 L 2.1 3.275 4.0 JEDEC EIAJ Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 10 Z9 0.7 0.625 1.55 0.75 0.85 0.6 0.525 1.45 0.65 0.75 EUROPEAN PROJECTION ISSUE DATE 01-09-26 01-11-20 SOT632A 2001 Dec 04 ZD 1.45 3.75 1.55 2.45 1.55 1.35 0.75 1.35 3.65 1.45 2.35 1.45 1.25 0.65 REFERENCES IEC Z Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 BGY282 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Dec 04 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands budgetnum/printrun/ed/pp12 Date of release: 2001 Dec 04 Document order number: 9397 750 09163