VSMS3700 Infrared Emitting Diode, 950 nm, GaAs

VSMS3700
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm):
3.5 x 2.8 x 1.75
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
948553
• Suitable for high pulse current operation
• Good spectral
photodetectors
matching
with
Si
• Package matched with IR emitter series VEMT3700
• Floor life: 168 h, MSL 3, acc. J-STD-020
DESCRIPTION
• Lead (Pb)-free reflow soldering
VSMS3700 is an infrared, 950 nm emitting diode in GaAs
technology, molded in a PLCC-2 package for surface
mounting (SMD).
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared source in tactile keyboards
• IR diode in low space applications
• PCB mounted infrared sensors
• Emitter in miniature photo-interrupters
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λP (nm)
tr (ns)
4.5
± 60
950
800
VSMS3700
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMS3700-GS08
Tape and reel
MOQ: 7500 pcs, 1500 pcs/reel
PLCC-2
VSMS3700-GS18
Tape and reel
MOQ: 8000 pcs, 8000 pcs/reel
PLCC-2
Note
• MOQ: minimum order quantity
Rev. 1.4, 25-Sep-13
Document Number: 81373
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMS3700
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
5
V
Reverse voltage
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1.5
A
PV
170
mW
Power dissipation
Junction temperature
Operating temperature range
Tj
100
°C
Tamb
-40 to +85
°C
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tstg
-40 to +100
°C
Acc. figure 11, J-STD-020
Tsd
260
°C
J-STD-051, soldered on PCB
RthJA
250
K/W
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21341
20 30
40
50
60
70 80
90
0
100
Tamb - Ambient Temperature (°C)
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21342
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
1.7
V
IF = 100 mA, tp = 20 ms
VF
1.3
IF = 1 A, tp = 100 μs
VF
1.8
V
IF = 100 mA
TKVF
-1.3
mV/K
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
100
μA
8
mW/sr
30
1.6
4.5
pF
IF = 1.5 A, tp = 100 μs
Ie
35
mW/sr
IF = 100 mA, tp = 20 ms
φe
15
mW
IF = 100 mA
TKφe
-0.8
%/K
ϕ
± 60
deg
nm
Angle of half intensity
Peak wavelength
IF = 100 mA
λp
950
Spectral bandwidth
IF = 100 mA
Δλ
50
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.2
nm/K
IF = 20 mA
tr
800
ns
IF = 1 A
tr
400
ns
IF = 20 mA
tf
800
ns
IF = 1 A
tf
400
ns
EN 60825-1
d
0.5
mm
Rise time
Fall time
Virtual source diameter
Rev. 1.4, 25-Sep-13
Document Number: 81373
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMS3700
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
10 000
IF - Forward Current (mA)
tp/T = 0.005
Ie - Radiant Intensity (mW/sr)
Tamb < 60 °C
0.01
1000
0.02
0.05
100
0.2
0.5
DC
0.1
10
1
0.01
0.1
1
100
103
104
IF - Forward Current (mA)
1000
Φe - Radiant Power (mW)
I F - Forward Current (mA)
102
Fig. 6 - Radiant Intensity vs. Forward Current
10 4
10 3
10 2
10 1
10 0
0
1
2
3
100
10
1
0.1
100
4
V F - Forward Voltage (V)
94 7996
101
102
103
104
IF - Forward Current (mA)
94 8012
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Radiant Power vs. Forward Current
1.2
1.6
1.1
1.2
IF = 10 mA
Ie rel; Φe rel
VF rel - Relative Forward Voltage (V)
101
94 7956
Fig. 3 - Pulse Forward Current vs. Pulse Duration
10 -1
1
0.1
100
10
tp - Pulse Length (ms)
95 9985
10
1.0
0.9
IF = 20 mA
0.8
0.4
0.8
0.7
0
94 7990
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Rev. 1.4, 25-Sep-13
0
- 10 0 10
94 7993
50
100
140
T amb - Ambient Temperature (°C)
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Document Number: 81373
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMS3700
www.vishay.com
Vishay Semiconductors
0°
10°
20°
1.0
0.75
0.5
0.25
IF = 100 mA
0
900
0.9
50°
0.8
60°
70°
0.7
80°
1000
950
0.6
0.4
0.2
0
94 8013
λ - Wavelength (nm)
94 7994
40°
1.0
ϕ - Angular Displacement
30°
Ie, rel - Relative Radiant Sensitivity
Φe rel - Relative Radiant Power
1.25
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
0.9
1.75±0.1
3.5±0.2
0.8
Technical drawings
according to DIN
specifications
A
C
2.2
2.8±0.15
Pin identification
Dimensions in mm
Drawing-No.: 6.541-5067.01-4
Issue: 6; 23.09.13
Ø2.4
3
+0.15
Mounting Pad Layout
4
2.6 (2.8)
1.2
Area covered
with solderresist
1.6 (1.9)
4
Dimensions: Reflow and vapor phase (wave soldering)
Rev. 1.4, 25-Sep-13
Document Number: 81373
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMS3700
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
3.5
3.1
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
2.2
2.0
5.75
5.25
4.0
3.6
200
3.6
3.4
max. 30 s
150
max. 100 s
max. 120 s
1.85
1.65
100
1.6
1.4
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
8.3
7.7
4.1
3.9
0.25
4.1
3.9
2.05
1.95
94 8668
0
0
50
19841
100
150
200
250
300
Fig. 13 - Tape Dimensions in mm for PLCC-2
Time (s)
Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction
94 8158
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
> 160 mm
Moisture sensitivity level 3, acc. to J-STD-020
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
Tape leader
40 empty
compartments
min. 75 empty
compartments
Carrier leader
Carrier trailer
Fig. 14 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartments and sealed with cover tape.
10.0
9.0
120°
Adhesive tape
4.5
3.5
2.5
1.5
13.00
12.75
Blister tape
Component cavity
94 8670
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
63.5
60.5
180
178
14.4 max.
94 8665
Fig. 12 - Blister Tape
Fig. 15 - Dimensions of Reel-GS08
Rev. 1.4, 25-Sep-13
Document Number: 81373
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMS3700
www.vishay.com
Vishay Semiconductors
120°
4.5
3.5
2.5
1.5
COVER TAPE REMOVAL FORCE
10.4
8.4
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
13.00
12.75
62.5
60.0
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
321
329
14.4 max.
18857
Fig. 16 - Dimensions of Reel-GS18
Rev. 1.4, 25-Sep-13
Document Number: 81373
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000