Silicon Piezoresistive Relative Pressure Sensor KPY 33-RK Features • • • • Low pressure and temperature hysteresis Fast response High sensitivity and linearity Fatigue free monocrystaline silicon diaphragm giving high load cycle stability • High long term stability • Provided for further fabrication, protection cap TO-8-2 Type and Marking Symbol Pressure Range Unit Ordering Code KPY 33-RK P0 … PN 0 … 0.1 bar Q62705-K274 Pin Configuration 2 + VOUT + VIN 3 Not connected 4 Temperature sensor (typ. R25 = 2 kΩ) 5 Temperature sensor 6 Shielding, to be connected to + VIN 7 − VOUT 8 − VIN 1 Semiconductor Group 1 02.97 KPY 33-RK Absolute Maximum Ratings Parameter Symbol Limit Values Unit Pressure overload PMAX TA Tstg VIN 1.0 bar − 40 … + 125 ˚C − 50 … + 150 ˚C 12 V Operating temperature range Storage temperature range Supply voltage .. Electrical Characteristics at TA = 25 ˚C and VIN = 5 V, unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Bridge resistance RB 4 − 8 kΩ Sensitivity s Vfin V0 56.0 80.0 − mV/Vbar 28.0 40.0 − mV Output voltage Offset voltage P = P0 Linearity error (Best fit straight line) P = P0 ... PN FL Pressure hysteresis P1 = P0, P2 = PN, P3 = P0 PH mV − 25 − − ± 0.2 − ± 0.1 + 25 ± 0.5 − % Vfin % Vfin Electrical Characteristics at T1 = 25 ˚C, Ts = 125 ˚C, T3 = 25 ˚C and Vfin = 5 V, unless otherwise specified Parameter Symbol Limit Values min. Temperature coefficient of Vfin TCVfin Temperature coefficient of V0 TCV0 Temperature coefficient of RB TCRB Temperature hysteresis of V0; Vfin TH Semiconductor Group typ. Unit max. %/K − 0.19 − − 0.10 %/K − 0.05 − + 0.05 %/K − − 0.7 2 + 0.095 − ± 0.1 + 0.7 % v. Vfin KPY 33-RK Package Outline TO-8-2 Weight approx. 3.3 g Dimensions in mm Exterior Packaging I.e. tubes, trays, boxes are shown in our Data Book “Package Information”. Semiconductor Group 3