Variable Capacitance Diodes MA2X341 Silicon epitaxial planar type Unit : mm INDICATES CATHODE 1.6 − 0.1 + 0.2 1 ■ Features 2 • Large capacitance ratio • Small series resistance rD • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.55 ± 0.1 For AFC of UHF and VHF electronic tuner + 0.2 2.7 − 0.1 3.3 ± 0.2 *(3.8 ± 0.2) 0.3 5° Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 34 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 Rating 0.16 − 0.03 1.1 − 0.1 Symbol 0 to 0.05 Parameter + 0.2 ■ Absolute Maximum Ratings Ta = 25°C 5° *( ): WL type 1 : Anode 2 : Cathode Mini Type Package (2-pin) Marking Symbol: 6K ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol Min Max Unit 10 nA CD(2V) VR = 2 V, f = 1 MHz 10.5 16.0 pF CD(10V) VR = 10 V, f = 1 MHz 3.3 5.7 pF Capacitance ratio CD(2V)/CD(10V) 2.8 3.4 1.6 Ω Series rD VR = 30 V Typ Diode capacitance resistance* IR Conditions VR = 9 pF, f = 470 MHz Note) 1.Rated input/output frequency: 470 MHz 2.* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2X341 Variable Capacitance Diodes CD VR Forward current IF (mA) Diode capacitance CD (pF) 30 20 10 5 3 0 4 Reverse current IR (nA) VR = 30 V 10 1 0.1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) CD rank classification CD(2V) / CD(10V) = 3.4 CD(2V) (pF) 15 14 13 10 2 CD(2V) / CD(10V) = 2.8 6.0 5.5 5.0 4.5 4.0 3.5 3.0 CD(10V) (pF) 11 1.02 80 Ta = 60°C − 40°C 25°C 60 40 f = 1 MHz VR = 2 V 1.01 10 V 1.00 0.99 0.98 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) IR T a 100 12 100 0 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) 16 1.03 20 2 0.01 120 CD(Ta) CD(Ta = 25°C) f = 1 MHz Ta = 25°C 50 1 CD Ta IF V F 100 1.2 0.97 0 20 40 60 80 Ambient temperature Ta (°C) 100