Variable Capacitance Diodes MA2ZV06 Silicon epitaxial planar type Unit : mm INDICATES CATHODE Parameter Symbol Rating Unit Reverse voltage (DC) VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.7 ± 0.1 + 0.1 0.4 ± 0.15 2 + 0.1 0.16 − 0.06 2.5 ± 0.2 0.9 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1 0 to 0.05 • Good linearity and large capacitance-ratio in CD VR relation • Small series resistance rD • S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.3 − 0.05 ■ Features 0.4 ± 0.15 1.25 ± 0.1 For VCO 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 8C ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Symbol IR Conditions VR = 5 V Diode capacitance CD(1V) VR = 1 V, f = 1 MHz CD(4V) VR = 4 V, f = 1 MHz Capacitance ratio CD(1V)/CD(4V) Series resistance* rD Min VR = 4 V, f = 470 MHz Typ Max Unit 10 nA 41.0 pF 14.6 16.2 pF 2.40 2.70 0.3 Ω 37.0 Note) 1．Rated input/output frequency: 470 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2ZV06 Variable Capacitance Diodes CD VR 100 f = 1 MHz Ta = 25°C 20 10 5 3 2 0 8 12 16 20 24 28 32 36 40 4 Reverse voltage VR (V) IR Ta Reverse current IR (nA) 100 VR = 5 V 10 1 0.1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 f = 1 MHz 25°C Ta = 60°C 4V − 40°C 1.02 80 1.01 60 40 1.00 20 0.99 0 VR = 1 V 1.03 CD(Ta) CD(Ta = 25°C) 30 0.01 1.04 100 Forward current IF (mA) Diode capacitance CD (pF) 50 1 CD Ta IF V F 120 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 1.2 0.98 0 20 40 60 80 100 Ambient temperature Ta (°C)