Schottky Barrier Diodes (SBD) MA2J732 (MA732) Silicon epitaxial planar type Unit: mm 1.25±0.1 For switching For wave detection 0.7±0.1 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Symbol Rating Unit VR 30 V Peak reverse voltage VRM 30 V Peak forward current IFM 150 mA Forward current (DC) IF 30 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C (0.15) Parameter 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) 0.16+0.1 –0.06 5° 0.4±0.1 5° • Low forward voltage VF, optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification because of its short reverse recovery time (trr) • S-Mini type 2-pin package 2.5±0.2 0 to 0.1 ■ Features 1 : Anode 2 : Cathode EIAJ : SC-90A SMini2-F1 Package Marking Symbol: 2C ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 30 V 30 µA Forward voltage (DC) VF1 IF = 1 mA 0.3 V VF2 IF = 30 mA Terminal capacitance Ct VR = 1 V, f = 1 MHz 1.5 pF Reverse recovery time * trr IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1.0 ns Detection efficiency η Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % 1.0 Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. Publication date: August 2001 SKH00016AED 1 MA2J732 IF V F 103 Reverse current IR (µA) Forward current IF (mA) Ta = 125°C VF Ta 1.0 Ta = 125°C 75°C 25°C 102 IR V R 104 −20°C 10 1 10−1 0.8 75°C 102 25°C 10 1 Forward voltage VF (V) 103 IF = 30 mA 0.6 10 mA 0.4 0.2 1 mA 10−2 10−1 0 0.4 0.8 1.2 1.6 2.0 2.4 0 5 15 20 IR T a 30 102 10 1 Terminal capacitance Ct (pF) VR = 30 V 3V 1V f = 1 MHz Ta = 25°C 2.8 2.4 2.0 1.6 1.2 0.8 0.4 10−1 –40 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 200 0 5 10 15 20 25 Reverse voltage VR (V) SKH00016AED 0 −40 0 40 80 120 Ambient temperature Ta (°C) Ct VR 3.2 104 103 25 Reverse voltage VR (V) Forward voltage VF (V) Reverse current IR (µA) 10 30 160 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.