PANASONIC MA4X348

Variable Capacitance Diodes
MA4X348
Silicon planar type
Unit : mm
For AFC of FM tuner
+ 0.2
2.8 − 0.3
+ 0.25
0.65 ± 0.15
+ 0.1
0.4 − 0.05
1.45
1
0.5
0.95
0.95
2
0.4 − 0.05
3
+ 0.1
0.6 − 0
0.2
+ 0.2
2.9 − 0.05
• Two elements contained independently, allowing high density
mounting
• Small reverse current IR
1.9 ± 0.2
0.5 R
4
+ 0.1
■ Features
0.65 ± 0.15
1.5 − 0.05
Reverse voltage (DC)
VR
15
V
Peak reverse voltage
VRM
15
V
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
+ 0.1
Unit
0.16 − 0.06
Rating
0.8
Symbol
+ 0.2
Parameter
1.1 − 0.1
■ Absolute Maximum Ratings Ta = 25°C
0 to 0.1
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1S
Internal Connection
4
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Symbol
Conditions
Min
IR1
VR = 12 V
IR2
VR = 12 V, Ta = 75°C
Diode capacitance
CD
VR = 10 V, f = 1 MHz
10
Q
Q
VR = 10 V, f = 50 MHz
40
Typ
Max
Unit
100
nA
1
µA
16
pF

Note) Rated input/output frequency: 50 MHz
1
MA4X348
Variable Capacitance Diodes
IF  V F
VF  Ta
IR  V R
103
10
1.6
1.4
25°C
Ta = 150°C
− 20°C
1
10−1
1
Forward voltage VF (V)
100°C
10
Reverse current IR (mA)
Forward current IF (mA)
102
Ta = 150°C
10−1
100°C
10−2
25°C
1.2
1.0
IF = 100 mA
0.8
10 mA
0.6
3 mA
0.4
0.2
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
10−3
0
Forward voltage VF (V)
5
10
15
20
IR  T a
12 V
10 V
10−1
80
120
160
200
Q  VR
f = 50 MHz
Ta = 50°C
103
30
25
Q
Diode capacitance CD (pF)
10
40
104
f = 1 MHz
Ta = 25°C
35
Reverse current IR (nA)
0
Ambient temperature Ta (°C)
CD  VR
40
1
0
−40
30
Reverse voltage VR (V)
102
VR = 15 V
25
20
102
15
10
10
5
10−2
–40
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
200
0
5
10
15
20
25
Reverse voltage VR (V)
30
1
0.3
1
3
10
30
100
Reverse voltage VR (V)
300