Switching Diodes MA3X158 Silicon epitaxial planar type Unit : mm For small power rectification and surge absorption 2.8 + 0.25 1.45 0.95 3 + 0.1 0.4 − 0.05 + 0.2 2.9 − 0.05 1 + 0.1 0.16 − 0.06 0.8 + 0.2 1.1 − 0.1 Symbol Rating Unit VR 200 V Repetitive peak reverse voltage VRRM 250 V Non-repetitive peak forward surge voltage VRSM 300 V Output current IF(AV) 100 mA Non-repetitive peak forward surge current* IFSM 500 mA Marking Symbol: M1C Junction temperature Tj 125 °C Internal Connection Storage temperature Tstg −55 to +125 °C Note) * : t = 1 s 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Reverse voltage (DC) 0.65 ± 0.15 1.5 − 0.05 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1.9 ± 0.2 • High reverse voltage VR • Large forward current IF(AV) • Small package and allowing automatic mounting 0.95 0.65 ± 0.15 ■ Features + 0.2 − 0.3 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 200 V 1.0 µA Forward voltage (DC) VF IF = 100 mA 1.3 V Note) Rated input/output frequency: 3 MHz 1 MA3X158 Switching Diodes IF V F VF Ta IR V R 102 1.2 10 Ta = 125°C Reverse current IR (µA) Forward current IF (mA) – 20°C 1 10–1 0 0.2 0.4 0.6 0.8 1.0 1.2 IR T a 10 1 Reverse current IR (µA) 10−1 75°C 10−2 25°C VR = 200 V 10−1 100 V 10−2 10−3 10−4 −40 0 40 80 120 10−4 160 Ambient temperature Ta (°C) IF = 100 mA 0.8 10 mA 0.6 1 mA 0.4 0.1 mA 0.2 0 0 40 80 120 160 200 Reverse voltage VR (V) Forward voltage VF (V) 2 Ta = 125°C 10−3 10–2 10–3 1.0 1 25°C Forward voltage VF (V) 75°C 10 240 −40 0 40 80 120 160 Ambient temperature Ta (°C)