PHILIPS UMA1017M

INTEGRATED CIRCUITS
DATA SHEET
UMA1017M
Low-voltage frequency synthesizer
for radio telephones
Product specification
Supersedes data of November 1994
File under Integrated Circuits, IC03
1995 Jul 10
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
UMA1017M
The device is designed to operate from 3 NiCd cells, in
pocket phones, with low current and nominal 5 V supplies.
FEATURES
• Low current from 3 V supply
The synthesizer operates at RF input frequencies up to
1.25 GHz. The synthesizer has a fully programmable
reference divider. All divider ratios are supplied via a
3-wire serial programming bus.
• Fully programmable RF divider
• 3-line serial interface bus
• Independent fully programmable reference divider,
driven from external crystal oscillator
Separate power and ground pins are provided to the
analog and digital circuits. The ground leads should be
externally short-circuited to prevent large currents flowing
across the die and thus causing damage. Digital supplies
VDD1 and VDD2 must also be at the same potential. VCC
must be equal to or greater than VDD (i.e. VDD = 3 V and
VCC = 5 V for wider tuning range).
• Dual phase detector outputs to allow fast frequency
switching
• Dual power-down modes.
APPLICATIONS
• 900 MHz mobile telephones
The phase detector uses two charge pumps, one provides
normal loop feedback, while the other is only active during
fast mode to speed-up switching. All charge pump currents
(gain) are fixed by an external resistance at pin ISET
(pin 14). Only passive loop filters are used; the
charge-pumps function within a wide voltage compliance
range to improve the overall system performance.
• Portable battery-powered radio equipment.
GENERAL DESCRIPTION
The UMA1017M BICMOS device integrates prescalers,
a programmable divider, and phase comparator to
implement a phase-locked loop.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCC ≥ VDD
MIN.
TYP.
MAX.
UNIT
VCC, VDD
supply voltage
2.7
−
5.5
V
ICC + IDD
supply current
−
7.7
−
mA
ICCPD, IDDPD
current in power-down mode per supply
−
10
−
µA
fVCO
RF input frequency
50
−
1250
MHz
fXTAL
crystal reference input frequency
3
−
40
MHz
fPC
phase comparator frequency
−
200
−
kHz
Tamb
operating ambient temperature
−30
−
+85
°C
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
UMA1017M
1995 Jul 10
NAME
DESCRIPTION
VERSION
SSOP20
plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
2
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
UMA1017M
BLOCK DIAGRAM
Fig.1 Block diagram.
1995 Jul 10
3
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
UMA1017M
PINNING
SYMBOL
PIN
DESCRIPTION
FAST
1
control input to speed-up main
synthesizer
CPF
2
speed-up charge-pump output
CP
3
normal charge-pump output
VDD1
4
digital power supply 1
VDD2
5
digital power supply 2
RFI
6
1 GHz RF main divider input
DGND1
7
digital ground 1
fXTAL
8
crystal frequency input from TCXO
PON
9
power-on input
n.c.
10
not connected
CLK
11
programming bus clock input
DATA
12
programming bus data input
E
13
programming bus enable input
(active LOW)
ISET
14
regulator pin to set the charge-pump
currents
n.c.
15
not connected
AGND
16
analog ground
n.c.
17
not connected
VCC
18
supply for charge-pump
DGND2
19
digital ground 2
LOCK
20
in-lock detect output; test mode
output
1995 Jul 10
Fig.2 Pin configuration.
4
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
UMA1017M
FUNCTIONAL DESCRIPTION
Serial programming bus
General
A simple 3-line unidirectional serial bus is used to program
the circuit. The 3 lines are DATA, CLK and E (enable).
The data sent to the device is loaded in bursts framed by
E. Programming clock edges and their appropriate data
bits are ignored until E goes active LOW. The programmed
information is loaded into the addressed latch when E
returns inactive HIGH. Only the last 21 bits serially clocked
into the device are retained within the programming
register. Additional leading bits are ignored, and no check
is made on the number of clock pulses. The fully static
CMOS design uses virtually no current when the bus is
inactive. It can always capture new programmed data
even during power-down.
Programmable reference and main dividers drive the
phase detector. Two charge pumps produce phase error
current pulses for integration in an external loop filter.
A hardwired power-down input PON (pin 9) ensures that
the dividers and phase comparator circuits can be
disabled.
The RFI input (pin 6) drives a pre-amplifier to provide the
clock to the first divider stage. The pre-amplifier has a high
input impedance, dominated by pin and pad capacitance.
The circuit operates with signal levels from 50 mV up to
225 mV (RMS), and at frequencies as high as 1.25 GHz.
The high frequency divider circuits use bipolar transistors,
slower bits are CMOS. Divider ratios (512 to 131071)
allow a 1 MHz phase comparison with a 500 MHz RF
input, and a 10 kHz phase comparison with a 1.25 GHz RF
input.
However when the synthesizer is powered-on, the
presence of a TCXO signal is required at pin 8 (fXTAL) for
correct programming.
Data format
The reference and main divider outputs are connected to
a phase/frequency detector that controls two charge
pumps. The two pumps have a common bias-setting
current that is set by an external resistance. The ratio
between currents in fast and normal operating modes can
be programmed via the 3-wire serial bus. The low current
pump remains active except in power-down. The high
current pump is enabled via the control input FAST (pin 1).
By appropriate connection to the loop filter, dual bandwidth
loops are provided: short time constant during frequency
switching (FAST mode) to speed-up channel changes and
low bandwidth in the settled state (on-frequency) to reduce
noise and breakthrough levels.
Data is entered with the most significant bit first. The
leading bits make up the data field, while the trailing four
bits are an address field. The UMA1017M uses 4 of the 16
available addresses. These are chosen to allow direct
compatibility with the UAA2072M integrated front-end.
The data format is shown in Table 1. The first entered bit
is p1, the last bit is p21.
The trailing address bits are decoded on the inactive edge
of E. This produces an internal load pulse to store the data
in one of the addressed latches. To ensure that data is
correctly loaded on first power-up, E should be held LOW
and only taken HIGH after having programmed an
appropriate register. To avoid erroneous divider ratios, the
pulse is not allowed during data reads by the frequency
dividers. This condition is guaranteed by respecting a
minimum E pulse width after data transfer. The
corresponding relationship between data fields and
addresses is given in Table 2.
The synthesizer speed-up charge pump (CPF) is
controlled by the FAST input in synchronization with phase
detector operation in such a way that potential
disturbances are minimized. The dead zone (caused by
finite time taken to switch the current sources on or off) is
cancelled by feedback from the normal pump output to the
phase detector thereby improving linearity.
Power-down mode
An open drain transistor drives the output pin LOCK
(pin 20). It is recommended that the pull-up resistor from
this pin to VDD is chosen to be of sufficient value to keep
the sink current in the LOW state to below 400 µA. The
output will be a current pulse with the duration of the
selected phase error. By appropriate external filtering and
threshold comparison, an out-of-lock or an in-lock flag is
generated. The out-of-lock function can be disabled via the
serial bus.
1995 Jul 10
The device can be powered-down either by hardware PON
or by software sPON. The dividers are on when both PON
and sPON are at logic 1.
When the synthesizer is reactivated after power-down, the
main and reference dividers are synchronized to avoid
possibility of random phase errors on power-up.
5
LAST IN
PROGRAMMING REGISTER BIT USAGE
FIRST IN
p21
p20
p19
p18
p17
p16
../..
p2
p1
ADD0
ADD1
ADD2
ADD3
DATA0
DATA1
../..
DATA15
DATA16
LATCH ADDRESS
Table 2
LSB
DATA COEFFICIENT
Bit allocation (note 1)
FT
REGISTER BIT ALLOCATION
p1
p2
p3
p4
p5
dt16
dt15
dt14
dt13
dt12
p6
p7
p8
p9
p10
p11
p12
DATA FIELD
LT
p13 p14
p15
p16 p17
dt4
dt2
dt1
dt3
X
X
X
OOL
X
CR1
X
X
X
X
X
PR10
PM16
X
CR0
X
X
sPON
X
X
X
X
MAIN DIVIDER COEFFICIENT
REFERENCE DIVIDER COEFFICIENT
X
p18 p19
dt0
TEST BITS(2)
X
MSB
X
p20
p21
ADDRESS
0
0
0
0
0
0
0
1
PM0
0
1
0
0
PR0
0
1
0
1
Notes
Philips Semiconductors
Format of programmed data
Low-voltage frequency synthesizer
for radio telephones
1995 Jul 10
Table 1
1. FT = first; LT = last; sPON = software power-up for synthesizer (1 = ON); OOL = out-of-lock (1 = enabled).
6
2. The test register should not be programmed with any other values except all zeros for normal operation.
Table 3
Fast and normal charge pumps current ratio (note 1)
CR1
CR0
ICP
ICPF
ICPF : ICP
0
0
4 × ISET
16 × ISET
4:1
0
1
4 × ISET
32 × ISET
8:1
1
0
2 × ISET
24 × ISET
12 : 1
1
1
2 × ISET
32 × ISET
16 : 1
Note
Product specification
UMA1017M
V 14
1. ISET = ----------- ; bias current for charge pumps.
R ext
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
UMA1017M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDD
digital supply voltage
−0.3
+5.5
V
VCC
analog supply voltage
−0.3
+5.5
V
∆VCC−VDD
difference in voltage between VCC and VDD
−0.3
+5.5
V
Vn
voltage at pins 1, 6, 8, 9, 11 to 14 and 20
−0.3
VDD + 0.3
V
V2, 3
voltage at pins 2 and 3
−0.3
VCC + 0.3
V
∆VGND
difference in voltage between AGND and DGND
(these pins should be connected together)
−0.3
+0.3
V
Ptot
total power dissipation
−
150
mW
Tstg
storage temperature
−55
+125
°C
Tamb
operating ambient temperature
−30
+85
°C
Tj
maximum junction temperature
−
95
°C
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
1995 Jul 10
PARAMETER
thermal resistance from junction to ambient in free air
7
VALUE
UNIT
120
K/W
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
UMA1017M
CHARACTERISTICS
VDD1 = VDD2 = 2.7 to 5.5 V; VCC = 2.7 to 5.5 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply; pins 4, 5 and 18
VDD
digital supply voltage
VDD1 = VDD2
2.7
−
5.5
V
VCC
analog supply voltage
VCC ≥ VDD
2.7
−
5.5
V
IDD
synthesizer digital supply current
VDD = 5.5 V
−
6.5
8.5
mA
ICC
charge pumps and analog supply
current
VCC = 5.5 V;
Rext =12 kΩ
−
1.2
2.0
mA
ICCPD, IDDPD
current in power-down mode per
supply
logic levels 0 or VDD
−
12
50
µA
RF main divider input; pin 6
fVCO
V6(rms)
RF input frequency
AC-coupled input signal level
(RMS value)
2.7 V < VDD < 3.5 V
50
−
1250
MHz
2.7 V < VDD < 5.5 V
50
−
1100
MHz
Rs = 50 Ω;
2.7 V < VDD < 3.5 V;
0.5 < fVCO < 1.25 GHz;
Tamb = −20 to +85 °C
50
−
225
mV
Rs = 50 Ω;
2.7 V < VDD < 5.5 V;
0.5 < fVCO < 1.1 GHz;
Tamb = −30 to +85 °C
100
−
300
mV
Rs = 50 Ω;
2.7 V < VDD < 5.5 V;
50 < fVCO < 500 MHz;
Tamb = −30 to +85 °C
150
−
300
mV
ZI
input impedance (real part)
fVCO = 1 GHz
−
1
−
kΩ
CI
typical pin input capacitance
indicative, not tested
−
2
−
pF
Rm
main divider ratio
512
−
131071
fPCmax
maximum phase comparator
frequency
−
2000
−
kHz
fPCmin
minimum phase comparator
frequency
−
10
−
kHz
5
−
40
MHz
Crystal reference divider input; pin 8
fXTAL
crystal reference input frequency
V8(rms)
sinusoidal input signal level
(RMS value)
4.0 V < VDD < 5.5 V
50
−
500
mV
2.7 V < VDD < 5.5 V
50
−
250
mV
ZI
input impedance (real part)
fXTAL = 30 MHz
−
6
−
kΩ
CI
typical pin input capacitance
indicative, not tested
−
2
−
pF
Rr
reference divider ratio
8
−
2047
1995 Jul 10
8
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
SYMBOL
PARAMETER
UMA1017M
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Charge pump current setting resistor input; pin 14
Rext
external resistor from pin 14 to
ground
V14
regulated voltage at pin 14
Rext = 12 kΩ
12
−
60
kΩ
−
1.15
−
V
−25
−
+25
%
−
±5
−
%
−5
±1
+5
nA
0.4
−
VCC − 0.4
V
0.7VDD
−
VDD + 0.3
V
Charge pump outputs; pins 3 and 2; Rext = 12 kΩ
IOcp
charge pump output current error
Imatch
sink-to-source current matching
ILcp
charge pump off leakage current
Vcp
charge pump voltage compliance
Vcp in range
Vcp =
1⁄ V
2 CC
Interface logic input signal levels; pins 13, 12, 11 and 1
VIH
HIGH level input voltage
VIL
LOW level input voltage
−0.3
−
0.3VDD
V
Ibias
input bias current
logic 1 or logic 0
−5
−
+5
µA
CI
input capacitance
indicative, not tested
−
2
−
pF
−
−
0.4
V
Lock detect output signal; pin 20 (open-drain output)
VOL
1995 Jul 10
LOW level output voltage
Isink = 0.4 mA
9
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
UMA1017M
SERIAL BUS TIMING CHARACTERISTICS
VDD = VCC = 3 V; Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
Serial programming clock; CLK
tr
input rise time
−
10
40
ns
tf
input fall time
−
10
40
ns
Tcy
clock period
100
−
−
ns
Enable programming; E
tSTART
delay to rising clock edge
40
−
−
ns
tEND
delay from last falling clock edge
−20
−
−
ns
tW
minimum inactive pulse width
4000(1)
−
−
ns
tSU;E
enable set-up time to next clock edge
20
−
−
ns
Register serial input data; DATA
tSU;DAT
input data to clock set-up time
20
−
−
ns
tHD;DAT
input data to clock hold time
20
−
−
ns
Note
1. The minimum pulse width (tW) can be smaller than 4 µs provided all the following conditions are satisfied:
256
a) Main divider input frequency f VCO > ---------tW
3
b) Reference divider input frequency f XTAL > -----tW
Fig.3 Serial bus timing diagram.
1995 Jul 10
10
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
UMA1017M
APPLICATION INFORMATION
Fig.4 Typical application block diagram.
1995 Jul 10
11
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
UMA1017M
Fig.5 Typical test and application diagram.
1995 Jul 10
12
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
UMA1017M
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
D
SOT266-1
E
A
X
c
y
HE
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0
1.4
1.2
0.25
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
6.6
6.2
1.0
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10
0o
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
90-04-05
95-02-25
SOT266-1
1995 Jul 10
EUROPEAN
PROJECTION
13
o
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
UMA1017M
SOLDERING SO or SSOP
SSOP
Introduction
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
cases reflow soldering is often used.
If wave soldering cannot be avoided, the following
conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Reflow soldering
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
Reflow soldering techniques are suitable for all SO and
SSOP packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
METHOD (SO OR SSOP)
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
SO
Repairing soldered joints
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds at 270 to 320 °C.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
1995 Jul 10
14
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer
for radio telephones
UMA1017M
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Jul 10
15
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Tel. (03)3740 5130, Fax. (03)3740 5077
Korea: Philips House, 260-199 Itaewon-dong,
Yongsan-ku, SEOUL, Tel. (02)709-1412, Fax. (02)709-1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,
SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905,
Tel. 9-5(800)234-7381, Fax. (708)296-8556
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. (040)783749, Fax. (040)788399
(From 10-10-1995: Tel. (040)2783749, Fax. (040)2788399)
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. (09)849-4160, Fax. (09)849-7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. (022)74 8000, Fax. (022)74 8341
Pakistan: Philips Electrical Industries of Pakistan Ltd.,
Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,
KARACHI 75600, Tel. (021)587 4641-49,
Fax. (021)577035/5874546
Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474
Portugal: PHILIPS PORTUGUESA, S.A.,
Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores,
Apartado 300, 2795 LINDA-A-VELHA,
Tel. (01)4163160/4163333, Fax. (01)4163174/4163366
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. (65)350 2000, Fax. (65)251 6500
South Africa: S.A. PHILIPS Pty Ltd.,
195-215 Main Road Martindale, 2092 JOHANNESBURG,
P.O. Box 7430, Johannesburg 2000,
Tel. (011)470-5911, Fax. (011)470-5494.
Spain: Balmes 22, 08007 BARCELONA,
Tel. (03)301 6312, Fax. (03)301 42 43
Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,
Tel. (0)8-632 2000, Fax. (0)8-632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. (01)488 2211, Fax. (01)481 77 30
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West
Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,
TAIPEI 100, Tel. (02)388 7666, Fax. (02)382 4382
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong,
Bangkok 10260, THAILAND,
Tel. (662)398-0141, Fax. (662)398-3319
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. (0 212)279 27 70, Fax. (0212)282 67 07
United Kingdom: Philips Semiconductors LTD.,
276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
Tel. (0181)730-5000, Fax. (0181)754-8421
United States: 811 East Arques Avenue, SUNNYVALE,
CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556
Uruguay: Coronel Mora 433, MONTEVIDEO,
Tel. (02)70-4044, Fax. (02)92 0601
Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,
International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. +31-40-724825 (from 10-10-1995: +31-40-2724825)
SCD41
© Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
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use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.
Printed in The Netherlands
413061/1500/02/pp16
Document order number:
Date of release: 1995 Jul 10
9397 750 00201