DISCRETE SEMICONDUCTORS DATA SHEET BU505; BU505D Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D DESCRIPTION High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU505D has an integrated efficiency diode. 2 2 APPLICATIONS 1 1 • Horizontal deflection circuits of colour television receivers. MBB008 3 MBB077 3 MBK106 PINNING 1 2 3 PIN a. BU505. b. BU505D. DESCRIPTION 1 base 2 collector; connected to mounting base 3 emitter Fig.1 Simplified outline (TO-220AB) and symbols. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM collector-emitter peak voltage VBE = 0 − 1500 V VCEO collector-emitter voltage open base − 700 V VCEsat collector-emitter saturation voltage IC = 2 A; IB = 900 mA − 1 V VF diode forward voltage (BU505D) IF = 2 A − 1.8 V ICsat collector saturation current − 2 A IC collector current (DC) − 2.5 A ICM collector current (peak value) see Fig.3 − 4 A Ptot total power dissipation Tmb ≤ 25 °C; see Fig.4 − 75 W tf fall time inductive load; see Fig.7 0.9 − µs see Fig.3 THERMAL CHARACTERISTICS SYMBOL Rth j-mb 1997 Aug 13 PARAMETER thermal resistance from junction to mounting base 2 VALUE UNIT 1.67 K/W Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM collector-emitter peak voltage VBE = 0 − 1500 V VCEO collector-emitter voltage open base − 700 V ICsat collector saturation current − 2 A IC collector current (DC) see Fig.3 − 2.5 A ICM collector current (peak value) see Fig.3 − 4 A IB base current (DC) − 2 A IBM base current (peak value) − 4 A Ptot total power dissipation − 75 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tmb ≤ 25 °C; see Fig.4 MGB859 10 handbook, full pagewidth Zth j−mb (K/W) δ=1 1 0.75 0.50 0.33 0.20 0.10 0.05 10−1 10−2 10−2 0.02 0.01 0 10−1 1 Fig.2 Transient thermal impedance. 1997 Aug 13 3 10 tp (ms) 102 Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEOsust collector-emitter sustaining voltage see Figs 5 and 6 700 − − V VCEsat collector-emitter saturation voltage IC = 2 A; IB = 900 mA − − 1 V VBEsat base-emitter saturation voltage IC = 2 A; IB = 900 mA − − 1.3 V VEBO emitter-base voltage IE = 10 mA; IC = 0 − 6 − V VF diode forward voltage (BU505D) IF = 2 A − − 1.8 V ICES collector-emitter cut-off current VCE = VCESmax; VBE = 0; note 1 − − 0.15 mA VCE = VCESmax; VBE = 0; Tj = 125 °C; note 1 − − 1 mA mA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 1 hFE DC current gain VCE = 5 V; IC = 100 mA 6 13 30 fT transition frequency VCE = 5 V; IC = 100 mA; f = 5 MHz − 7 − MHz Cc collector capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz − 65 − pF Switching times in horizontal deflection circuit (see Fig.7) ts tf storage time fall time ICM = 2 A; IB(end) = 900 mA; Vdr = −4 V LB = 10 µH − 6.5 − µs LB = 15 µH − 7.5 − µs LB = 25 µH − 9.5 − µs LB = 10 µH − 0.9 − µs LB = 15 µH − 0.9 − µs LB = 25 µH − 0.85 − µs ICM = 2 A; IB(end) = 900 mA; Vdr = −4 V Note 1. Measured with a half-sinewave voltage (curve tracer). 1997 Aug 13 4 Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BU505; BU505D MGB942 102 IC (A) 10 δ = 0.01 ICM max IC max tp = 10 µs II (1) 20 µs 1 50 µs 100 µs 200 µs I 500 µs (2) 10−1 2 ms 10 ms DC 10−2 10 102 103 Tmb = 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits. Fig.3 Forward bias SOAR. 1997 Aug 13 5 VCE (V) 104 Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D MGD283 120 handbook, halfpage Ptot max handbook, halfpage + 50 V (%) 100 to 200 Ω L 80 horizontal oscilloscope vertical 40 6V 300 Ω 1Ω 30 to 60 Hz MGE252 0 0 50 100 Tmb (oC) 150 Fig.5 Fig.4 Power derating curve. handbook, halfpage Test circuit for collector-emitter sustaining voltage. MBH382 ICsat iC handbook,IC halfpage 90% MGE239 (mA) 250 10% 200 time tf 100 iB ts IB (end) 0 VCE (V) min VCEOsust time Fig.6 Oscilloscope display for collector-emitter sustaining voltage. 1997 Aug 13 Fig.7 Switching time waveforms. 6 Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D PACKAGE OUTLINE Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 P q D1 D L1 L2(1) Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 c D D1 E e L L1 L2 max. P q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 1997 Aug 13 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 TO-220AB 7 Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 13 8 Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D NOTES 1997 Aug 13 9 Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D NOTES 1997 Aug 13 10 Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D NOTES 1997 Aug 13 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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