DISCRETE SEMICONDUCTORS DATA SHEET BUX84F; BUX85F Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUX84F; BUX85F PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN DESCRIPTION base 2 collector 3 emitter mb APPLICATIONS 2 1 1 mounting base; electrically isolated from all pins • Converters 3 MBB008 1 2 3 • Inverters • Switching regulators Fig.1 • Motor control systems. MBK109 Simplified outline (SOT186) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VCESM CONDITIONS collector-emitter peak voltage VCEO TYP. MAX. UNIT VBE = 0 BUX84F − 800 V BUX85F − 1000 V BUX84F − 400 V BUX85F − 450 V − 1 V collector-emitter voltage open base VCEsat collector-emitter saturation voltage ICsat collector saturation current − 1 A IC collector current (DC) − 2 A ICM collector current (peak value) − 3 A Ptot total power dissipation − 18 W tf fall time 0.4 − µs see Fig.4 Th ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-h thermal resistance from junction to external heatsink Rth j-a thermal resistance from junction to ambient VALUE UNIT note 1 7.2 K/W note 2 4.7 K/W 55 K/W Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. ISOLATION CHARACTERISTICS SYMBOL PARAMETER TYP. MAX. UNIT VisolM isolation voltage from all terminals to external heatsink (peak value) − 1500 V Cisol isolation capacitance from collector to external heatsink − pF 1997 Aug 14 2 12 Philips Semiconductors Product specification Silicon diffused power transistors BUX84F; BUX85F LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO PARAMETER collector-emitter peak voltage CONDITIONS MIN. MAX. UNIT VBE = 0 BUX84F − 800 V BUX85F − 1000 V BUX84F − 400 V BUX85F − 450 V collector-emitter voltage open base IC collector current (DC) − 2 A ICM collector current (peak value) − 3 A IB base current (DC) − 0.75 A IBM base current (peak value) − 1 A Ptot total power dissipation − 18 W Tstg storage temperature Th ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Note 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER CONDITIONS collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 2 and 3 BUX84 MAX. UNIT − − V 450 − − V collector-emitter saturation voltage IC = 0.3 A; IB = 30 mA; see Fig.4 − − 0.8 V IC = 1 A; IB = 200 mA; see Fig.4 − − 1 V IC = 1 A; IB = 200 mA; see Fig.5 − − 1.1 V VBEsat base-emitter saturation voltage ICES collector-emitter cut-off current IEBO emitter-base cut-off current hFE DC current gain fT TYP. 400 BUX85 VCEsat MIN. transition frequency 1997 Aug 14 VCE = VCESmax; VBE = 0 − − 0.2 mA VCE = VCESmax; VBE = 0; Tj = 125 °C − − 1.5 mA VEB = 5 V; IC = 0 − − 1 mA VCE = 5 V; IC = 5 A; see Fig.6 15 − − VCE = 5 V; IC = 100 mA; see Fig.6 20 50 100 VCE = 10 V; IC = 200 mA; f = 1 MHz − 20 − 3 MHz Philips Semiconductors Product specification Silicon diffused power transistors SYMBOL PARAMETER BUX84F; BUX85F CONDITIONS MIN. TYP. MAX. UNIT Switching times resistive load (see Fig.7) ton turn-on time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 0.2 0.5 µs ts storage time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 2 3.5 µs tf fall time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 0.4 − µs ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V; Tmb = 95 °C − − 1.4 µs andbook, halfpage handbook,IC halfpage + 50 V MGE239 (mA) 100 to 200 Ω 250 L 200 horizontal oscilloscope 100 vertical 6V 30 to 60 Hz Fig.2 1997 Aug 14 300 Ω 1Ω 0 MGE252 Test circuit for collector-emitter sustaining voltage. Fig.3 4 VCE (V) min VCEOsust Oscilloscope display for collector-emitter sustaining voltage. Philips Semiconductors Product specification Silicon diffused power transistors (1) (2) (3) BUX84F; BUX85F (4) MGB908 4 handbook, full pagewidth VCEsat (V) 3 2 1 0 0.05 0 (1) IC = 0.3 A. (2) IC = 0.5 A. 0.1 (3) IC = 0.7 A. (4) IC = 1 A. 0.25 0.2 0.15 0.3 IB (A) Tj = 25 °C; solid line: typical values; dotted line: maximum values. Fig.4 Collector-emitter saturation voltage as a function of base current; typical values. MGB904 VBEsat (1) (V) hFE typ (2) (3) 0.75 0.5 MGB879 102 handbook, halfpage 1.0 handbook, halfpage 10 0 100 200 IB (mA) 1 10−2 300 10−1 1 IC (A) Tj = 25 °C. (1) IC = 1 A. (2) IC = 0.5 A. (3) IC = 0.3 A. Fig.5 Base-emitter saturation voltage as a function of emitter current; typical values. 1997 Aug 14 Fig.6 DC current gain; typical values. 5 10 Philips Semiconductors Product specification Silicon diffused power transistors handbook, halfpage BUX84F; BUX85F MBB731 tr ≤30 ns IB on 90% IB 10% t IB off IC on 90% IC 10% tf ton Fig.7 t ts Switching time waveforms with resistive load. +25 V handbook, full pagewidth BD139 200 Ω 680 µF T 250 Ω 100 µF 100 Ω VIM D.U.T. tp Vi 100 Ω 30 Ω MGE253 50 Ω BD140 680 µF tp = 20 µs; T = 2 ms; VIM = 15 V. Fig.8 Test circuit resistive load. 1997 Aug 14 VCC 250V 6 Philips Semiconductors Product specification Silicon diffused power transistors BUX84F; BUX85F PACKAGE OUTLINE Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 exposed tabs SOT186 E E1 A P A1 m q D1 D L1 Q b1 L L2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E E1 e e1 L L1(1) L2 m P Q q w mm 4.4 4.0 2.9 2.5 0.9 0.7 1.5 1.3 0.55 0.38 17.0 16.4 7.9 7.5 10.2 9.6 5.7 5.3 2.54 5.08 14.3 13.5 4.8 4.0 10 0.9 0.5 3.2 3.0 1.4 1.2 4.4 4.0 0.4 Note 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. OUTLINE VERSION SOT186 1997 Aug 14 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 TO-220 7 Philips Semiconductors Product specification Silicon diffused power transistors BUX84F; BUX85F DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 14 8 Philips Semiconductors Product specification Silicon diffused power transistors BUX84F; BUX85F NOTES 1997 Aug 14 9 Philips Semiconductors Product specification Silicon diffused power transistors BUX84F; BUX85F NOTES 1997 Aug 14 10 Philips Semiconductors Product specification Silicon diffused power transistors BUX84F; BUX85F NOTES 1997 Aug 14 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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