GTM GMCR100

ISSUED DATE :2005/09/28
REVISED DATE :2006/03/29B
GM CR100-6
S E N S I T I V E G AT E S I L I C O N C O N T R O L L E D R E C T I F I E R S
REVERSE BLOCKING THYRISTORS 0.8A, 400V
Description
The GMCR100-6 PNPN device is designed for high volume, line-powered applications such as relay and lamp
drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion
equipment.
Features
Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits
On-state Current Rating of 0.8A RMS at 80
High Surge Current Capability 10A
Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design
Immunity to dV/dt - 20 V/ sec Minimum at 110
Glass-Passivated Surface for Reliability and Uniformity
Package Dimensions
D
TO-92
E
A
S1
b1
REF.
L
S E A T IN G
PLANE
e1
e
b
A
S1
b
b1
C
C
Absolute Maximum Ratings (TJ=25
Millimeter
Min.
Max.
4.45
4.7
1.02
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
1.150
1.390
2.42
2.66
unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage(Note1)
(TJ=-40 to 110 , Sine Wave, 50 to 60Hz; Gate open)
VDRM
VRRM
400
V
On-state RMS Current, (TC=80 ) 180 Conduction Angles
IT(RMS)
0.8
A
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60Hz, TJ=25 )
Circuit Fusing Consideration (t=8.3ms)
Forward Peak Gate Power (TA=25 , Pulse Width
ITSM
10
2
0.415
I
1.0 s)
Forward Average Gate Power (TA=25 , t=8.3ms)
t
A
2
A
S
PGM
100
mW
PG(AV)
10
mW
Forward Peak Gate Current (TA=25 , Pulse Width
1.0 s)
IGM
1.0
A
Reverse Peak Gate Voltage (TA=25 , Pulse Width
1.0 s)
VGRM
5.0
V
Operating Junction Temperature Rang @ Rate VRRM and VDRM
TJ
-40 ~ +110
Storage Temperature Rage
Tstg
-40 ~ +150
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress
limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device function operation is
not implied, damage may occur and reliability may be affected.
Note 1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage:
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall
not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
GMCR100-6
Page: 1/3
ISSUED DATE :2005/09/28
REVISED DATE :2006/03/29B
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-case
Junction-to-Ambient
Lead Solder Temperature (< 1/16” from case, 10 secs max)
Electrical Characteristics (TC = 25
Max
75
200
260
Unit
/W
unless otherwise noted)
Characteristic
Off Characteristics
Peak Repetitive Forward or Reverse Blocking Current (Note2)
TC=25
(VDRM=400V and VRRM=400V; RGK=1k )
TC=110
On Characteristics
Peak Forward On-State Voltage* (ITM=1A Peak @TA=25 )
Gate Trigger Current (Continuous dc) (Note3)
TC=25
(VAK=7.0 Vdc, RL=100 )
Holding Current (Note2)
TC=25
TC=-40
(VAK=7.0 Vdc, Initiating Current=20mA)
Latch Current
TC=25
(VAK=7.0 Vdc, Ig=200 A)
TC=-40
Gate Trigger Voltage (Continuous dc) (Note3)
TC=25
(VAK=7.0 Vdc, RL=100 )
TC=-40
Dynamic Characteristics
Critical Rate of Rise of Off-State Voltage
(VD=400V, Exponential Waveform, RGK=1000 , TJ=110 )
Critical Rate of Rise of Off-State Current
(IPK=20AV, PW =10 sec; diG/dt=1A/ sec, Igt=20mA)
*Indicates Pulse Test: Pulse Width 1.0ms, Duty Cycle
Note 2.RGK=1000 included in measurement.
Note 3.Dose not include RGK in measurement.
Symbol
R JC
R JA
TL
Symbol
Min
Typ
Max
Unit
IDRM, IRRM
-
-
10
100
A
VTM
-
-
1.7
V
IGT
-
50
100
A
IH
-
IL
-
VGT
-
0.5
0.6
0.62
-
5.0
10
10
15
0.8
1.2
dV/dt
20
35
-
V/ s
di/dt
-
-
50
A/ s
mA
mA
V
1%.
Voltage Current Characteristic of SCR
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
GMCR100-6
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
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ISSUED DATE :2005/09/28
REVISED DATE :2006/03/29B
Characteristics Curve
Fig 1. Typical Gate Trigger Current
v.s. Junction Temperature
Fig 2. Typical Gate Trigger Voltage
v.s. Junction Temperature
Fig 3. Typical Holding Current
v.s. Junction Temperature
Fig 4. Typical Latching Current
v.s. Junction Temperature
Fig 5. Typical RMS Current Derating
Fig 6. Typical On-State Characteristic
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GMCR100-6
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