RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway • Fast switching for high efficiency 17031 Mechanical Data Case: Sintered glass case, JEDEC DO-204AP Terminals: Solder plated axial leads, solderable per MILSTD- 750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 560 mg Parts Table Part Type differentiation Package RG1A VRRM = 50 V DO-204AP ( G1) RG1B VRRM = 100 V DO-204AP ( G1) RG1D VRRM = 200 V DO-204AP ( G1) RG1G VRRM = 400 V DO-204AP ( G1) RG1J VRRM = 600 V DO-204AP ( G1) RG1K VRRM = 800 V DO-204AP ( G1) RG1M VRRM = 1000 V DO-204AP ( G1) Document Number 86074 Rev. 2, 28-Jan-03 www.vishay.com 1 RG1A to RG1M VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage = Repetitive peak reverse voltage Part Symbol Value Unit see electrical characteristics RG1A VR = VRRM 50 V see electrical characteristics RG1B VR = VRRM 100 V see electrical characteristics RG1D VR = VRRM 200 V see electrical characteristics RG1G VR = VRRM 400 V see electrical characteristics RG1J VR = VRRM 600 V see electrical characteristics RG1K VR = VRRM 800 V see electrical characteristics RG1M VR = VRRM 1000 V Maximum average forward rectified current 0.375 " (9.5 mm) lead length at Tamb = 55 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Maximum full load reverse current full cycle average 0.375 " (9.5 mm) lead length at Tamb = 25 °C IR(AV) 1.0 µA full cycle average 0.375 " (9.5 mm) lead length at Tamb = 100 °C IR(AV) 100 µA TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Symbol Value Unit RθJA 55 K/W Typical thermal resistance 1) 1) Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Maximum instantaneous forward voltage IF = 1 A Reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical junction capacitance www.vishay.com 2 Part Symbol Typ. VF Max Unit 1.3 V IR 2.0 µA RG1A trr 150 ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A RG1B trr 150 ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A RG1D trr 150 ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A RG1G trr 150 ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A RG1J trr 200 ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A RG1K trr 250 ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A RG1M VR = 4.0 V, f = 1 MHz trr CJ 500 15 ns pF Document Number 86074 Rev. 2, 28-Jan-03 RG1A to RG1M VISHAY Vishay Semiconductors 1.0 20 Resistive or Inductive Load Instantaneous Reverse Current (µA) Average Forward Rectified Current (A) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 0.8 Ipk / IAV = π 0.6 Capacitance Load Ipk / IAV = 5.0 10 20 0.4 0.2 0.375" (9.5mm) Lead Length 0 25 0 grg1a_01 50 100 75 125 150 TJ = 125°C 1 TJ = 75°C 0.1 TJ = 25°C 0.01 175 Ambient Temperature (°C) 10 0 Figure 1. Forward Current Derating Curve 40 60 80 100 Figure 4. Typical Reverse Characteristics TA = 25°C 8.3ms Single Half Sine-Wave (JEDEC Method) 20 10 Junction Capacitance (pF) 30 30 Peak Forward Surge Current (A) 20 Percent of Rated Peak Reverse Voltage (%) grg1a_04 TJ = 25°C f = 1.0MHZ Vsig, 50mVp-p max. 10 1 1 0 100 10 1 Number of Cycles at 60 HZ grg1a_02 grg1a_05 Figure 2. Maximum Non-Repetitive Peak Forward Surge Current 100 10 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Instantaneous Forward Current (A) 20 10 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 1 0.1 0.01 0.4 grg1a_03 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Document Number 86074 Rev. 2, 28-Jan-03 www.vishay.com 3 RG1A to RG1M VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. 1.0 (25.4) MIN. 17030 www.vishay.com 4 Document Number 86074 Rev. 2, 28-Jan-03 RG1A to RG1M VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86074 Rev. 2, 28-Jan-03 www.vishay.com 5