TetraFET D2024UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED H FEATURES K M L J • SIMPLIFIED AMPLIFIER DESIGN E F • SUITABLE FOR BROAD BAND APPLICATIONS G SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE Dim. A B C D E F G mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 H 0.76 J K L M N P 0.51 1.02 45° 0° 7° 0.20 2.18 4.57 Tol. ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08 Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45° 0° 7° 0.008 0.086 0.180 Tol. ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 +0.010 -0.000 Min. Max. Max. Min. Max. ±0.003 Max. ±0.003 • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk 29W 65V ±20V 4A –65 to 150°C 200°C Prelim.6/00 D2024UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Drain–Source Test Conditions Min. Typ. Max. Unit VGS = 0 ID = 10mA VDS = 28V VGS = 0 1 mA VGS = 20V VDS = 0 4 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 0.8A GPS Common Source Power Gain PO = 10W η Drain Efficiency VDS = 28V BVDSS IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VSWR Load Mismatch Tolerance IDQ = 0.4A f = 1GHz 65 1 V 0.72 S 10 dB 40 % 20:1 — Ciss Input Capacitance VDS = 0V VGS = –5V f = 1MHz 48 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 24 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 2 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Max. 6°C / W Prelim.6/00