IRF IRLML2803

PD - 91258D
IRLML2803
HEXFET® Power MOSFET
l
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Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
D
VDSS = 30V
G
RDS(on) = 0.25Ω
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro3
Absolute Maximum Ratings
Parameter
I D @ TA = 25°C
I D @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Units
1.2
0.93
7.3
540
4.3
± 20
5.0
-55 to + 150
A
mW
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient „
Typ.
Max.
Units
–––
230
°C/W
4/28/03
IRLML2803
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
g fs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.0
0.87
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.029
–––
–––
–––
–––
–––
–––
–––
–––
3.3
0.48
1.1
3.9
4.0
9.0
1.7
85
34
15
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.25
VGS = 10V, ID = 0.91A ƒ
Ω
0.40
VGS = 4.5V, ID = 0.46A ƒ
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 10V, ID = 0.46A
1.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, VGS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
5.0
ID = 0.91A
0.72
nC VDS = 24V
1.7
VGS = 10V, See Fig. 6 and 9 ƒ
–––
VDD = 15V
–––
ID = 0.91A
ns
–––
RG = 6.2Ω
–––
RD = 16Ω, See Fig. 10 ƒ
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
0.54
–––
–––
7.3
–––
–––
–––
–––
26
22
1.2
40
32
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 0.91A, VGS = 0V ƒ
TJ = 25°C, IF = 0.91A
di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ ISD ≤ 0.91A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
„ Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
TJ ≤ 150°C
D
G
S
IRLML2803
10
10
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
1
3.0V
20µs PULSE WIDTH
TJ = 25°C
A
0.1
0.1
1
1
3.0V
20µs PULSE WIDTH
TJ = 150°C
A
0.1
10
0.1
1
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
10
TJ = 25°C
TJ = 150°C
1
0.1
3.0
V DS = 10V
20µs PULSE WIDTH
3.5
4.0
4.5
5.0
5.5
6.0
10
V DS, Drain-to-Source Voltage (V)
A
6.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
I D = 0.91A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLML2803
160
120
V GS , Gate-to-Source Voltage (V)
140
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V DS = 24V
V DS = 15V
16
Ciss
100
12
Coss
80
60
Crss
40
I D = 0.91A
8
4
20
0
0
0.0
A
1
10
100
VDS , Drain-to-Source Voltage (V)
1.0
2.0
3.0
4.0
A
5.0
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
FOR TEST CIRCUIT
SEE FIGURE 9
TJ = 150°C
1
TJ = 25°C
10
10µs
100µs
1
1ms
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.4
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1
10ms
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRLML2803
10V
RD
V DS
QG
VGS
QGS
QGD
D.U.T.
RG
VG
+
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
50KΩ
90%
.2µF
12V
.3µF
+
V
- DS
D.U.T.
10%
VGS
VGS
3mA
td(on)
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
1
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRLML2803
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
Driver Gate Drive
Period
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 12. For N-Channel HEXFETS
ISD
*
IRLML2803
Package Outline
SOT-23 Outline
Dimensions are shown in millimeters (inches)
D
-B-
3
E
-A-
LEAD ASSIGNMENTS
1 - GATE
2 - SOURCE
3 - DRAIN
3
3
DIM
H
1
0.20 ( .008 )
2
M
A M
e
e1
θ
A
INCHES
MILLIMETERS
A
MIN
.032
MAX
.044
MIN
0.82
MAX
1.11
A1
.001
.004
0.02
0.10
B
.015
.021
0.38
0.54
C
.004
.006
0.10
0.15
D
.105
.120
2.67
3.05
e
.0750 BASIC
1.90 BASIC
e1
.0375 BASIC
0.95 BASIC
E
.047
.055
1.20
1.40
H
.083
.098
2.10
2.50
L
.005
.010
0.13
0.25
θ
0°
8°
0°
8°
MINIMUM RECOMMENDED FOOTPRINT
-CB
A1
3X
0.10 (.004)
M
0.80 ( .031 )
3X
0.008 (.003)
C AS B S
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
L
3X
C
3X
0.90
( .035 )
3X
2.00
( .079 )
0.95 ( .037 )
2X
IRLML2803
Part Marking Information
SOT-23
Notes : T his part marking information applies to devices produced before 02/26/2001
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
EXAMPLE: T HIS IS AN IRLML6302
PART NUMBER
DATE
CODE
PART NUMBER CODE REFERENCE:
1A =
1B =
1C =
1D =
1E =
1F =
1G =
1H =
IRLML2402
IRLML2803
IRLML6302
IRLML5103
IRLML6402
IRLML6401
IRLML2502
IRLML5203
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
WW = (27-52) IF PRECEDED BY A LETT ER
DAT E CODE EXAMPLES:
YWW = 9503 = 5C
YWW = 9532 = EF
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Notes : T his part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECE DED BY LAS T DIGIT OF CALENDAR YEAR
PART NUMBER
Y = YEAR
W = WEEK
LOT
CODE
PART NUMBER CODE REFERENCE:
A=
B=
C=
D=
E=
F=
G=
H=
IRLML2402
IRLML2803
IRLML6302
IRLML5103
IRLML6402
IRLML6401
IRLML2502
IRLML5203
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LETTER
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
IRLML2803
Tape & Reel Information
SOT-23
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/03