Order this document by MMPQ3467/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 MAXIMUM RATINGS 1 Rating Symbol Value Unit VCEO –40 Vdc Collector – Base Voltage VCB –40 Vdc Emitter – Base Voltage VEB –5.0 Vdc IC –1.0 Adc Collector – Emitter Voltage Collector Current — Continuous Each Transistor Four Transistors Equal Power Power Dissipation @ TA = 25°C Derate above 25°C PD 0.52 4.2 1.2 9.6 Watts mW/°C Power Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 2.5 20 Watts mW/°C Operating and Storage Junction Temperature Range TJ, Tstg CASE 751B–05, STYLE 4 SO–16 °C –55 to +150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector – Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) V(BR)CEO –40 — — Vdc Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) V(BR)CBO –40 — — Vdc Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO –5.0 — — Vdc Collector Cutoff Current (VCB = –30 Vdc, IE = 0) ICBO — — –200 nAdc Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) IEBO — — –200 nAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MMPQ3467 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 20 — — — VCE(sat) — –0.23 –0.5 Vdc VBE(sat) — –0.9 –1.2 Vdc fT — 190 — MHz Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cob — 10 — pF Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cib — 55 — pF Turn–On Time (IC = –500 mAdc, IB1 = –50 mAdc) ton — 20 — ns Turn–Off Time (IC = –500 mAdc, IB1 = IB2 = –50 mAdc) toff — 60 — ns ON CHARACTERISTICS DC Current Gain(1) (IC = –500 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage(1) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage(1) (IC = –500 mAdc, IB = –50 mAdc) DYNAMIC CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –50 mAdc, VCE = –10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS 1. Pulse Test: Pulse Width 2 v 300 ms; Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data MMPQ3467 INFORMATION FOR USING THE SO–16 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.060 1.52 0.275 7.0 0.155 4.0 0.024 0.6 0.050 1.270 inches mm SO–16 SO–16 POWER DISSIPATION The power dissipation of the SO–16 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SO–16 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 1.2 watts. PD = 150°C – 25°C 104°C/W = 1.2 watts The 104°C/W for the SO–16 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 1.2 watts. There are other alternatives to achieving higher power dissipation from the SO–16 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MMPQ3467 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. –A– 16 9 1 8 –B– P 8 PL 0.25 (0.010) M B S G K C –T– R F X 45 _ SEATING PLANE D 16 PL 0.25 (0.010) M T B S A J M S CASE 751B–05 SO–16 ISSUE J DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 4 ◊ *MMPQ3467/D* MMPQ3467/D Motorola Small–Signal Transistors, FETs and Diodes Device Data