PIN Photodiodes PNZ3108 PIN Photodiode Unit : mm For optical control systems 1.8±0.3 0.8±0.2 0.6±0.1 5.0±0.1 2.54±0.1 4 3 1.0±0.1 Features High sensitivity and low dark current Good positional linearity Small plastic package 5˚ 13.5±1.0 4.0±0.1 1.0±0.3 1.0±0.3 5˚ For one-dimensional light-point position detection 1.0±0.1 4-0.6+0.1 –0.2 4-0.5±0.15 1 10˚ Absolute Maximum Ratings (Ta = 25˚C) Symbol Ratings Unit VR 30 V Power dissipation PD 30 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 5˚ 1: Anode 1 2: Common cathode 3: Anode 2 4: Common cathode Dimensions of detection area Unit : mm 2.1 1.5 1.1 0.8 Parameter 10˚ 5˚ Reverse voltage (DC) 0.2 +0.1 –0.05 2 Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ID Photo current IL*1 Peak sensitivity wavelength λP Conditions min typ VR = 1V VR = 1V, L = 1000 lx VR = 1V, λ = 900nm, E = 1mW/cm2 VR = 1V 7 max Unit 2 nA 12 µA 8 µA 940 nm 5 µs tr, tf*2 VR = 1V, RL = 1kΩ Capacitance between pins Ct VR = 1V, f = 1MHz 8 pF Resistance between electrodes RS*3 VR = 1V, Va = 0.5V 250 kΩ Gradient of position signal a*4 Response time VR = 1V 0.133 *1 I L = I1 + I2 Note: I1 and I2 are the photoelectric currents of anodes A1 and A2. White tungsten lamp light source (color temperature T = 2856K) *2 GaAs light emitting diode light source ( λ = 800nm) *3 V is the potential difference between anodes A1 and A2. a *4 a = | (I –I )/(I +I ) | 1 2 1 2 Note : Incident light is at the position 100 µm from the reference position. The reference position is the position where I1 = I2. 1 PNZ3108 PIN Photodiodes PD — Ta IL — L IL — Ta 10 3 40 160 Ta = 25˚C T = 2856K 140 20 10 IL (%) 0V 10 2 10 1 120 100 Relative photo current IL (µA) Photo current Power dissipation PD (mW) VR = 10V 30 VR = 10V L = 1000 lx T = 2856K 80 60 40 20 0 – 30 0 20 40 60 Ambient temperature 80 10 –1 10 2 100 10 3 Ta (˚C ) 60 80 100 Ta (˚C ) VR = 1V Ta = 25˚C 120 80 S (%) 80 1 60 Relative sensitivity ID (nA) 160 Dark current 10 –1 10 –2 40 20 10 –3 0 8 16 24 Reverse voltage 10 –4 – 40 – 20 32 VR (V) 0 20 40 60 Ambient temperature RS — Ta 80 0 200 100 Ct — VR 200 100 0 20 40 Ambient temperature 60 80 Ta (˚C ) 100 800 1000 1200 Sig.IN VCC = 5V tr td 90% 10% tf , 10 2 Sig. OUT RL Sig. OUT 50Ω tr , tf (µs) Ct (pF) Capacitance between pins 300 600 tr , tf — RL 10 3 400 0 – 40 – 20 400 Wavelength λ (nm) Ta (˚C ) Rise time, Fall time ID (pA) Dark current 40 10 40 RS (kΩ) 20 Spectral sensitivity characteristics 100 VR = 1V 200 Resistance between electrodes 0 Ambient temperature 10 2 Ta = 25˚C 2 0 – 40 – 20 10 5 L (lx) ID — Ta ID — VR 240 0 10 4 Illuminance 10 1 10 3 10 2 VR = 1V 10 1 10 –1 10 –1 1 Reverse voltage 10 VR (V) 10 2 10 –1 10 –2 Ta = 25˚C 10 –1 1 10 External load resistance 10 2 10 3 RL (kΩ)