Order this document by BC618/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 1 BASE 2 EMITTER 3 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 55 Vdc Collector – Base Voltage VCBO 80 Vdc Emitter – Base Voltage CASE 29–04, STYLE 17 TO–92 (TO–226AA) VEBO 12 Vdc Collector Current — Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector – Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) V(BR)CEO 55 — — Vdc Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 80 — — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 12 — — Vdc Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) ICES — — 50 nAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) ICBO — — 50 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO — — 50 nAdc OFF CHARACTERISTICS Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 BC618 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Collector – Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) VCE(sat) — — 1.1 Vdc Base – Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) VBE(sat) — — 1.6 Vdc DC Current Gain (IC = 100 µA, VCE = 5.0 Vdc) (IC = 10 mA, VCE = 5.0 Vdc) (IC = 200 mA, VCE = 5.0 Vdc) (IC = 1.0 A, VCE = 5.0 Vdc) hFE 2000 4000 10000 4000 — — — — — — 50000 — fT 150 — — MHz Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Cob — 4.5 7.0 pF Input Capacitance (VEB = 5.0 V, IE = 0, f = 1.0 MHz) Cib — 5.0 9.0 pF ON CHARACTERISTICS — DYNAMIC CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz) RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC618 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 500 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 200 BANDWIDTH = 1.0 Hz 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 µA 0.1 0.07 0.05 10 µA 0.03 0.02 10 20 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 50 100 200 50 k 100 k Figure 3. Noise Current 14 200 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) IC = 10 µA 70 50 100 µA 30 20 1.0 mA 10 1.0 2.0 10 10 µA 8.0 100 µA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 100 0 Figure 4. Total Wideband Noise Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data 0 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 100 0 Figure 5. Wideband Noise Figure 3 BC618 SMALL–SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL–SIGNAL CURRENT GAIN 20 C, CAPACITANCE (pF) TJ = 25°C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 200 k hFE, DC CURRENT GAIN TJ = 125°C 25°C 30 k 20 k 10 k 7.0 k 5.0 k – 55°C VCE = 5.0 V 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 VCE(sat) @ IC/IB = 1000 0.6 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 10. “On” Voltages 4 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25°C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA) 500 1000 Figure 9. Collector Saturation Region 1.6 10 2.0 3.0 Figure 8. DC Current Gain 5.0 7.0 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 100 k 70 k 50 k VCE = 5.0 V f = 100 MHz TJ = 25°C 500 – 1.0 – 2.0 *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C *RqVC FOR VCE(sat) – 55°C TO 25°C – 3.0 25°C TO 125°C – 4.0 qVB FOR VBE – 5.0 – 55°C TO 25°C – 6.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 11. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data BC618 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 10 5.0 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 FIGURE A 1.0 ms tP TA = 25°C TC = 25°C 100 µs PP 1.0 s 100 70 50 PP t1 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 0.4 0.6 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area 40 + t1 f + ttP1 PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 BC618 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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