MOTOROLA BC450

Order this document
by BC450/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–100
Vdc
Collector – Base Voltage
VCBO
–100
Vdc
Emitter – Base Voltage
2
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–300
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–100
—
—
Vdc
Collector – Base Breakdown Voltage
(IC = –100 mA, IE = 0)
V(BR)CBO
–100
—
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–5.0
—
—
Vdc
ICBO
—
—
–100
nAdc
50
120
50
100
50
60
—
—
—
—
—
—
460
220
—
—
—
—
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = –80 Vdc, IE = 0)
ON CHARACTERISTICS*
DC Current Gain
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
(IC = –100 mA, VCE = –5.0 V)
1. Pulse Test: Pulse Width
hFE
BC450
BC450A
BC450
BC450A
BC450
BC450A
v 300 ms, Duty Cycle 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
—
1
BC450,A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector – Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
VCE(sat)
—
–0.125
–0.25
Vdc
Base – Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
VBE(sat)
—
–0.85
—
Vdc
Base – Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –100 mA, VCE = –5.0 V)*
VBE(on)
–0.55
—
—
–0.76
–0.7
–1.2
100
200
—
ON CHARACTERISTICS(1) (Continued)
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width
fT
v 300 ms, Duty Cycle 2.0%.
TURN–ON TIME
100
+10 V
RB
Vin
0
tr = 3.0 ns
5.0 µF
TURN–OFF TIME
+VBB
VCC
+40 V
–1.0 V
5.0 µs
MHz
100
VCC
+40 V
100
RL
OUTPUT
RB
Vin
5.0 µF
*CS < 6.0 pF
100
RL
OUTPUT
*CS < 6.0 pF
5.0 µs
tr = 3.0 ns
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
300
40
TJ = 25°C
TJ = 25°C
200
Cibo
20
–5.0 V
C, CAPACITANCE (pF)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
BC450,A
VCE = –1.0 V
100
70
10
8.0
6.0
Cobo
4.0
50
30
–1.0
–2.0 –3.0 –5.0 –7.0 –10
–20 –30
IC, COLLECTOR CURRENT (mA)
–50 –70 –100
2.0
–0.1
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current–Gain — Bandwidth Product
t, TIME (ns)
VCC = –40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
100
70
50
–100
Figure 3. Capacitance
1000
700
500
300
200
–50
tf
tr
30
20
td @ VBE(off) = –0.5 V
10
–10
–20
–30
–50 –70 –100
IC, COLLECTOR CURRENT (mA)
–200
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 4. Switching Times
1.0
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P(pk)
t1
0.02
0.1
0.07
0.05
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–469)
TJ(pk) – TC = P(pk) ZθJC(t)
TJ(pk) – TA = P(pk) ZθJA(t)
0.01
SINGLE PULSE
0.03
SINGLE PULSE
ZθJC(t) = r(t) • RθJC
ZθJA(t) = r(t) • RθJA
0.02
0.01
1.0
2.0
5.0
10
20
50
100
200
500
t, TIME (ms)
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
Figure 5. Thermal Response
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BC450,A
–1K
1.0
0.8
V, VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
–500
–200
–100
–50
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURRENT LIMIT
DUTY CYCLE ≤ 10%
BC450
–20
–10
–1.0
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
–2.0
–5.0
–10
–20
–50
VCE, COLLECTOR–EMITTER VOLTAGE (V)
0
0.2
–80
0.5
1.0 2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
RθVB, TEMPERATURE COEFFICIENT (mV/°C)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
TJ = 25°C
1.6
1.2
50 mA
100 mA
200 mA
0.8
0.4
0
0.02
IC =
10 mA
0.05
0.2
0.5
2.0
1.0
IB, BASE CURRENT (mA)
0.1
5.0
10
Figure 8. Collector Saturation Region
100 200
Figure 7. “On” Voltages
Figure 6. Active Region — Safe Operating Area
20 mA
50
20
–1.0
–1.4
–1.8
RθVB for VBE
–55°C to 125°C
–2.2
–2.6
–3.0
0.2
0.5
1.0
2.0
5.0
20
50
10
IC, COLLECTOR CURRENT (mA)
100
200
Figure 9. Base–Emitter Temperature Coefficient
300
VCE = –5.0 V
TJ = 125°C
hFE , DC CURRENT GAIN
200
25°C
100
–55°C
70
50
30
–0.2
–0.3
–0.5
–0.7
–1.0
–2.0
–3.0
–5.0 –7.0
–10
IC, COLLECTOR CURRENT (mA)
–20
–30
–50
–70
–100
–200
Figure 10. DC Current Gain
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
BC450,A
1.0
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.2
0.5
1.0
5.0
10
50
2.0
20
IC, COLLECTOR CURRENT (mA)
100
200
2.0
1.6
IC =
10 mA
1.2
50 mA
100 mA
200 mA
0.8
0.4
TJ = 25°C
0
0.02
0.05 0.1
Figure 11. “On” Voltages
RθVB, TEMPERATURE COEFFICIENT (mV/°C)
20 mA
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
Figure 12. Collector Saturation Region
–1.0
–1.4
–1.8
RθVB for VBE
–55°C to 125°C
–2.2
–2.6
–3.0
0.2
0.5
1.0
2.0
5.0
20
50
10
IC, COLLECTOR CURRENT (mA)
100
200
Figure 13. Base–Emitter Temperature Coefficient
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
BC450,A
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: [email protected] – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
6
◊
*BC450/D*
BC450/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data