Order this document by MPS8098/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER MAXIMUM RATINGS Symbol MPS8098 MPS8598 MPS8099 MPS8599 Unit Collector – Emitter Voltage VCEO 60 80 Vdc Collector – Base Voltage VCBO 60 80 Vdc MPS8099 MPS8598 MPS8599 6.0 5.0 Rating Emitter – Base Voltage VEBO Voltage and current are negative for PNP transistors *Motorola Preferred Device Vdc Collector Current – Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C 1 Operating and Storage Junction Temperature Range 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 60 80 — — 60 80 — — 6.0 5.0 — — — 0.1 — — 0.1 0.1 — — 0.1 0.1 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)CEO MPS8098, MPS8598 MPS8099, MPS8599 V(BR)CBO MPS8098, MPS8598 MPS8099, MPS8599 Vdc V(BR)EBO MPS8098, MPS8099 MPS8598, MPS8599 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICES Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) MPS8098, MPS8598 MPS8099, MPS8599 Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MPS8098, MPS8099 MPS8598, MPS8599 1. Pulse Test: Pulse Width Vdc Vdc µAdc ICBO v 300 ms, Duty Cycle = 2.0%. µAdc µAdc IEBO Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 100 100 75 300 — — — — 0.4 0.3 0.5 0.6 0.7 0.8 150 — — — 6.0 8.0 — — 25 30 Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) — VCE(sat) Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Vdc VBE(on) Vdc MPS8098, MPS8598 MPS8099, MPS8599 SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Cibo pF MPS8098, MPS8099 MPS8598, MPS8599 v 300 ms, Duty Cycle = 2.0%. TURN–ON TIME TURN–OFF TIME VCC –1.0 V pF MPS8098, MPS8099 MPS8598, MPS8599 Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width VCC +40 V +VBB +40 V 5.0 ms 100 RL 100 OUTPUT +10 V Vin Vin * CS 5.0 mF RL OUTPUT RB 0 tr = 3.0 ns MHz t 6.0 pF RB * CS 5.0 mF 100 t 6.0 pF 100 5.0 ms tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data PNP 300 TJ = 25°C 200 5.0 V VCE = 1.0 V 100 70 50 30 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) NPN 300 TJ = 25°C 200 –5.0 V VCE = –1.0 V 100 70 50 30 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. MPS8098/99 Current–Gain — Bandwidth Product Figure 3. MPS8598/99 Current–Gain — Bandwidth Product 40 40 25°C TTJJ==25°C TJ = 25°C 20 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 20 Cibo 10 8.0 6.0 Cibo 10 8.0 6.0 Cobo 4.0 4.0 Cobo 2.0 0.1 1.0 k 700 500 0.5 1.0 2.0 5.0 20 10 50 2.0 –0.1 –0.2 100 –5.0 –50 –100 –10 –20 Figure 4. MPS8098/99 Capacitance Figure 5. MPS8598/99 Capacitance 1.0 k 700 500 ts t, TIME (ns) tf 200 tf 100 70 50 tr 30 30 20 20 20 tr td @ VBE(off) = 0.5 V 10 30 50 70 100 VCC = –40 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts 300 100 70 50 10 –2.0 VR, REVERSE VOLTAGE (VOLTS) 200 10 –0.5 –1.0 VR, REVERSE VOLTAGE (VOLTS) VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) 0.2 200 td @ VBE(off) = –0.5 V –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. MPS8098/99 Switching Times Figure 7. MPS8598/99 Switching Times Motorola Small–Signal Transistors, FETs and Diodes Device Data –200 3 PNP 1.0 k 700 500 –1.0 k –700 –500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) NPN 300 –300 200 –200 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 MPS8098 MPS8099 DUTY CYCLE ≤ 10% 10 1.0 –100 –70 –50 2.0 3.0 5.0 7.0 10 20 –30 –20 –10 50 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8598 DUTY CYCLE ≤ 10% MPS8599 70 100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 8. MPS8098/99 Active–Region Safe Operating Area Figure 9. MPS8598/99 Active–Region Safe Operating Area 400 300 TJ = 125°C h FE, DC CURRENT GAIN 25°C 200 –55°C 100 VCE = 5.0 V 80 60 40 0.2 0.3 0.5 1.0 1.0 2.0 3.0 5.0 10 20 30 50 25°C 100 70 VCE = –5.0 V 50 30 –0.2 100 200 –55°C –0.5 –1.0 –2.0 –20 –50 –100 –200 Figure 10. MPS8098/99 DC Current Gain Figure 11. MPS8598/99 DC Current Gain 1.0 TJ = 25°C TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 5.0 V 0.4 0.2 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 4 –10 IC, COLLECTOR CURRENT (mA) 0.6 0 0.2 –5.0 IC, COLLECTOR CURRENT (mA) 0.8 V, VOLTAGE (VOLTS) 200 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN TJ = 125°C 0.5 1.0 2.0 5.0 10 20 50 100 200 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. MPS8098/99 “ON” Voltages Figure 13. MPS8598/99 “ON” Voltages 200 Motorola Small–Signal Transistors, FETs and Diodes Device Data 2.0 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) PNP TJ = 25°C IC = 50 mA IC = 20 mA 1.6 IC = 200 mA IC = 100 mA 1.2 0.8 0.4 IC = 10 mA 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 RqVB FOR VBE –55°C TO 125°C –2.2 –2.6 –3.0 0.2 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE IC = 100 mA IC = 200 mA 1.2 0.8 0.4 TJ = 25°C 0 0.05 0.1 0.02 0.2 0.5 1.0 2.0 10 5.0 Figure 15. MPS8598/99 Collector Saturation Region –1.8 0.5 1.0 2.0 5.0 10 20 50 100 200 20 –1.0 –1.4 –1.8 RqVB FOR VBE –55°C TO 125°C –2.2 –2.6 –3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 16. MPS8098/99 Base–Emitter Temperature Coefficient Figure 17. MPS8598/99 Base–Emitter Temperature Coefficient 200 D = 0.5 0.2 0.3 0.1 0.07 0.05 IC = 50 mA IC = 20 mA Figure 14. MPS8098/99 Collector Saturation Region –1.4 0.2 IC = 10 mA 1.6 IB, BASE CURRENT (mA) –1.0 1.0 0.7 0.5 2.0 IB, BASE CURRENT (mA) R qVB , TEMPERATURE COEFFICIENT (mV/° C) R qVB , TEMPERATURE COEFFICIENT (mV/° C) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) NPN 0.1 0.05 0.02 SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) P(pk) 0.01 t1 SINGLE PULSE 0.03 t2 0.02 DUTY CYCLE, D = t1/t2 0.01 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k t, TIME (ms) Figure 18. MPS8098, MPS8099, MPS8598 and MPS8599 Thermal Response Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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