DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGA2003 Silicon MMIC amplifier Product specification Supersedes data of 1999 Feb 25 1999 Jul 23 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 FEATURES PINNING • Low current PIN DESCRIPTION • Very high power gain 1 GND • Low noise figure 2 RF in • Integrated temperature compensated biasing 3 CTRL (bias current control) • Control pin for adjustment bias current 4 VS + RF out • Supply and RF output pin combined. APPLICATIONS handbook, halfpage • RF front end 3 CTRL 4 • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) VS+RFout BIAS CIRCUIT • Low noise amplifiers • Satellite television tuners (SATV) 2 • High frequency oscillators. Top view 1 RFin GND MAM427 DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. Marking code: A3. Fig.1 Simplified outline (SOT343R) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VS DC supply voltage RF input AC coupled − 4.5 V IS DC supply current VVS-OUT = 2.5 V; ICTRL = 1 mA; RF input AC coupled 11 − mA MSG maximum stable gain VVS-OUT = 2.5 V; f = 1800 MHz; Tamb = 25 °C 16 − dB NF noise figure VVS-OUT = 2.5 V; f = 1800 MHz; ΓS = Γopt 1.8 − dB 1999 Jul 23 2 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VS supply voltage RF input AC coupled VCTRL voltage on control pin IS supply current (DC) ICTRL control current Ptot total power dissipation Tstg storage temperature Tj operating junction temperature forced by DC voltage on RF input or ICTRL Ts ≤ 100 °C MIN. MAX. UNIT − 4.5 V − 2 V − 30 mA − 3 mA − 135 mW −65 +150 °C − 150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE UNIT 350 K/W CHARACTERISTICS RF input AC coupled; Tj = 25 °C; unless otherwise specified. SYMBOL IS MSG |s21|2 s12 NF IP3(in) PARAMETER supply current maximum stable gain insertion power gain isolation noise figure input intercept point; note 1 CONDITIONS TYP. MAX. UNIT VVS-OUT = 2.5 V; ICTRL = 0.4 mA 3 4.5 6 mA VVS-OUT = 2.5 V; ICTRL = 1.0 mA 8 11 15 mA VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 900 MHz − 24 − dB VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 1800 MHz − 16 − dB VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 900 MHz 18 19 − dB VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 1800 MHz 13 14 − dB VVS-OUT = 2.5 V; IVS-OUT = 0; f = 900 MHz − 26 − dB VVS-OUT = 2.5 V; IVS-OUT = 0; f = 1800 MHz − 20 − dB VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 900 MHz; ΓS = Γopt − 1.8 2 dB VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 1800 MHz; ΓS = Γopt − 1.8 2 dB VVS-OUT = 2.3 V; IVS-OUT = 3.6 mA; f = 900 MHz − −6.5 − dBm VVS-OUT = 2.3 V; IVS-OUT = 3.5 mA; f = 1800 MHz − −4.8 − dBm Note 1. See application note RNR-T45-99-B-0514. 1999 Jul 23 MIN. 3 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 MGS537 200 handbook, halfpage handbook, halfpage 100 pF Ptot (mW) R1 VS 150 L1 C RF out RCTRL VCTRL 3 100 4 BGA2003 50 2 1 C 0 0 RF in 50 100 150 MGS536 Fig.2 Typical application circuit. Ts (°C) 200 Fig.3 Power derating. MGS538 2.5 MGS539 30 handbook, halfpage handbook, halfpage I CTRL (mA) I VS-OUT (mA) 2 20 1.5 1 10 0.5 0 0 0 0.5 1 1.5 2 VCTRL (V) 0 ICTRL = (VCTRL − 0.83)/296. VS-OUT = 2.5 V. Fig.4 Fig.5 Control current as a function of the control voltage on pin 3; typical values. 1999 Jul 23 4 0.5 1 1.5 2 I CTRL (mA) 2.5 Bias current as a function of the control current; typical values. Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 MGS540 30 I VS-OUT (mA) 25 handbook, halfpage MGS541 20 handbook, halfpage (6) I VS-OUT (mA) (5) 15 20 (4) 15 10 (3) 10 5 5 (2) (1) 0 −40 VS-OUT = 2.5 V. (1) ICTRL = 0.2 mA. (2) ICTRL = 0.4 mA. (3) ICTRL = 1.0 mA. Fig.6 0 0 40 80 120 Tamb (°C) 0 (4) ICTRL = 1.5 mA. (5) ICTRL = 2.0 mA. (6) ICTRL = 2.5 mA. 2 3 4 VVS-OUT (V) 5 ICTRL = 1 mA. Bias current (IVS-OUT) as a function of the ambient temperature with ICTRL as parameter; typical values. Fig.7 MGS542 25 1 Bias current (IVS-OUT) as a function of the voltage at the output pin (VVS-OUT); typical values. MGS543 30 gain (dB) 25 handbook, halfpage handbook, halfpage fT (GHz) 20 MSG Gmax GUM 20 15 15 10 10 5 5 0 0 0 10 0 20 30 I VS-OUT (mA) 5 10 VVS-OUT = 2.5 V; f = 1000 MHz. VVS-OUT = 2.5 V; f = 900 MHz. Fig.8 Fig.9 Transition frequency as a function of the bias current (IVS-OUT); typical values. 1999 Jul 23 5 15 20 25 I VS-OUT (mA) Gain as a function of the bias current (IVS-OUT); typical values. Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 MGS544 25 gain (dB) MGS545 40 handbook, halfpage handbook, halfpage gain (dB) MSG 20 30 Gmax 15 20 G UM GUM Gmax 10 10 5 0 102 0 0 5 10 15 20 25 IVS-OUT (mA) 103 f (MHz) 104 VVS-OUT = 2.5 V; f = 1800 MHz. VVS-OUT = 2.5 V; IVS-OUT = 10 mA. Fig.10 Gain as a function of the bias current (IVS-OUT); typical values. Fig.11 Gain as a function of frequency; typical values. MGS546 3 min (dB) 2.5 handbook, NF halfpage 2 (1) (3) (2) (4) 1.5 1 0.5 0 1 (1) (2) (3) (4) 10 I VS-OUT (mA) 102 f = 2400 MHz. f = 1800 MHz. f = 1000 MHz. f = 900 MHz. Fig.12 Minimum noise figure as a function of the bias current (IVS-OUT); typical values. 1999 Jul 23 6 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 handbook, full pagewidth 90° unstable region source 135° 1.0 +1 45° +2 +0.5 unstable region load 0.6 (1) (2) +0.2 180° 0 0.5 0.4 +5 (3) Γopt 0.2 1 0.8 0.2 2 5 0° 0 (4) −0.2 f = 900 MHz; VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω. (1) G = 23 dB. (2) G = 22 dB. (3) G =21 dB. (4) NF = 1.8 dB. (5) NF = 2 dB. (6) NF = 2.2 dB. −5 (5) (6) −135° −0.5 −2 − 45° −1 1.0 − 90° MGS547 Fig.13 Noise, stability and gain circles; typical values. handbook, full pagewidth 90° unstable region source 135° +1 +0.5 (3) +2 (4) unstable region load 1.0 45° 0.8 (2) 0.6 (1) +0.2 0.4 +5 0.2 180° f = 1800 MHz; VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω. (1) Gmax = 16.1 dB. (2) G = 16 dB. (3) G = 15 dB. (4) G = 14 dB. (5) NF = 1.9 dB. (6) NF = 2.1 dB. (7) NF = 2.3 dB. 0.2 0 0.5 1 2 5 0° Γopt (5) −0.2 −5 (6) (7) −135° −0.5 −2 − 45° −1 1.0 − 90° MGS548 Fig.14 Noise, stability and gain circles; typical values. 1999 Jul 23 0 7 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 90° handbook, full pagewidth 1.0 +1 135° 45° +2 +0.5 0.8 0.6 +0.2 0.4 +5 0.2 180° 0.2 0 0.5 1 2 2 GHz 5 1 GHz 3 GHz 0 200 MHz −5 500 MHz −0.2 −0.5 −135° 0° 100 MHz −2 − 45° −1 1.0 − 90° MGS549 VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (s11); typical values. 90° handbook, full pagewidth 135° 45° 500 MHz 900 MHz 1 GHz 200 MHz 1.8 GHz 100 MHz 180° 20 16 12 8 3 GHz 4 0° −135° − 45° − 90° MGS550 VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω. Fig.16 Common emitter forward transmission coefficient (s21); typical values. 1999 Jul 23 8 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 90° handbook, full pagewidth 135° 45° 3 GHz 180° 0.5 0.4 0.3 0.2 0.1 0° 100 MHz −135° − 45° − 90° MGS551 VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω. Fig.17 Common emitter reverse transmission coefficient (s12); typical values. 90° handbook, full pagewidth 1.0 +1 135° 45° +2 +0.5 0.8 0.6 +0.2 0.4 +5 0.2 180° 0.2 0 0.5 1 2 5 100 MHz 900 MHz 1 GHz −0.2 −135° 3 GHz −0.5 0° 0 200 MHz −5 1.8 GHz 500 MHz −2 − 45° −1 1.0 − 90° MGS552 VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω. Fig.18 Common emitter output reflection coefficient (s22); typical values. 1999 Jul 23 9 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 SOT343R 1999 Jul 23 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125006/04/pp12 Date of release: 1999 Jul 23 Document order number: 9397 750 06134