PHILIPS BGA2003

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BGA2003
Silicon MMIC amplifier
Product specification
Supersedes data of 1999 Feb 25
1999 Jul 23
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
FEATURES
PINNING
• Low current
PIN
DESCRIPTION
• Very high power gain
1
GND
• Low noise figure
2
RF in
• Integrated temperature compensated biasing
3
CTRL (bias current control)
• Control pin for adjustment bias current
4
VS + RF out
• Supply and RF output pin combined.
APPLICATIONS
handbook, halfpage
• RF front end
3
CTRL
4
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
VS+RFout
BIAS
CIRCUIT
• Low noise amplifiers
• Satellite television tuners (SATV)
2
• High frequency oscillators.
Top view
1
RFin
GND
MAM427
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
Marking code: A3.
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
−
4.5
V
IS
DC supply current
VVS-OUT = 2.5 V; ICTRL = 1 mA;
RF input AC coupled
11
−
mA
MSG
maximum stable gain
VVS-OUT = 2.5 V; f = 1800 MHz;
Tamb = 25 °C
16
−
dB
NF
noise figure
VVS-OUT = 2.5 V; f = 1800 MHz; ΓS = Γopt
1.8
−
dB
1999 Jul 23
2
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VS
supply voltage
RF input AC coupled
VCTRL
voltage on control pin
IS
supply current (DC)
ICTRL
control current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
forced by DC voltage on RF input
or ICTRL
Ts ≤ 100 °C
MIN.
MAX.
UNIT
−
4.5
V
−
2
V
−
30
mA
−
3
mA
−
135
mW
−65
+150
°C
−
150
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
UNIT
350
K/W
CHARACTERISTICS
RF input AC coupled; Tj = 25 °C; unless otherwise specified.
SYMBOL
IS
MSG
|s21|2
s12
NF
IP3(in)
PARAMETER
supply current
maximum stable gain
insertion power gain
isolation
noise figure
input intercept point; note 1
CONDITIONS
TYP.
MAX.
UNIT
VVS-OUT = 2.5 V; ICTRL = 0.4 mA
3
4.5
6
mA
VVS-OUT = 2.5 V; ICTRL = 1.0 mA
8
11
15
mA
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz
−
24
−
dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz
−
16
−
dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz
18
19
−
dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz
13
14
−
dB
VVS-OUT = 2.5 V; IVS-OUT = 0;
f = 900 MHz
−
26
−
dB
VVS-OUT = 2.5 V; IVS-OUT = 0;
f = 1800 MHz
−
20
−
dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz; ΓS = Γopt
−
1.8
2
dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz; ΓS = Γopt
−
1.8
2
dB
VVS-OUT = 2.3 V; IVS-OUT = 3.6 mA;
f = 900 MHz
−
−6.5
−
dBm
VVS-OUT = 2.3 V; IVS-OUT = 3.5 mA;
f = 1800 MHz
−
−4.8
−
dBm
Note
1. See application note RNR-T45-99-B-0514.
1999 Jul 23
MIN.
3
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
MGS537
200
handbook, halfpage
handbook, halfpage
100 pF
Ptot
(mW)
R1
VS
150
L1
C
RF out
RCTRL
VCTRL
3
100
4
BGA2003
50
2
1
C
0
0
RF in
50
100
150
MGS536
Fig.2 Typical application circuit.
Ts (°C)
200
Fig.3 Power derating.
MGS538
2.5
MGS539
30
handbook, halfpage
handbook, halfpage
I CTRL
(mA)
I VS-OUT
(mA)
2
20
1.5
1
10
0.5
0
0
0
0.5
1
1.5
2
VCTRL (V)
0
ICTRL = (VCTRL − 0.83)/296.
VS-OUT = 2.5 V.
Fig.4
Fig.5
Control current as a function of the control
voltage on pin 3; typical values.
1999 Jul 23
4
0.5
1
1.5
2
I CTRL (mA)
2.5
Bias current as a function of the control
current; typical values.
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
MGS540
30
I VS-OUT
(mA)
25
handbook, halfpage
MGS541
20
handbook, halfpage
(6)
I VS-OUT
(mA)
(5)
15
20
(4)
15
10
(3)
10
5
5
(2)
(1)
0
−40
VS-OUT = 2.5 V.
(1) ICTRL = 0.2 mA.
(2) ICTRL = 0.4 mA.
(3) ICTRL = 1.0 mA.
Fig.6
0
0
40
80
120
Tamb (°C)
0
(4) ICTRL = 1.5 mA.
(5) ICTRL = 2.0 mA.
(6) ICTRL = 2.5 mA.
2
3
4
VVS-OUT (V)
5
ICTRL = 1 mA.
Bias current (IVS-OUT) as a function of the
ambient temperature with ICTRL as
parameter; typical values.
Fig.7
MGS542
25
1
Bias current (IVS-OUT) as a function of the
voltage at the output pin (VVS-OUT); typical
values.
MGS543
30
gain
(dB)
25
handbook, halfpage
handbook, halfpage
fT
(GHz)
20
MSG
Gmax
GUM
20
15
15
10
10
5
5
0
0
0
10
0
20
30
I VS-OUT (mA)
5
10
VVS-OUT = 2.5 V; f = 1000 MHz.
VVS-OUT = 2.5 V; f = 900 MHz.
Fig.8
Fig.9
Transition frequency as a function of the
bias current (IVS-OUT); typical values.
1999 Jul 23
5
15
20
25
I VS-OUT (mA)
Gain as a function of the bias current
(IVS-OUT); typical values.
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
MGS544
25
gain
(dB)
MGS545
40
handbook, halfpage
handbook, halfpage
gain
(dB)
MSG
20
30
Gmax
15
20
G UM
GUM
Gmax
10
10
5
0
102
0
0
5
10
15
20
25
IVS-OUT (mA)
103
f (MHz)
104
VVS-OUT = 2.5 V; f = 1800 MHz.
VVS-OUT = 2.5 V; IVS-OUT = 10 mA.
Fig.10 Gain as a function of the bias current
(IVS-OUT); typical values.
Fig.11 Gain as a function of frequency; typical
values.
MGS546
3
min
(dB)
2.5
handbook,
NF halfpage
2
(1)
(3)
(2)
(4)
1.5
1
0.5
0
1
(1)
(2)
(3)
(4)
10
I VS-OUT (mA)
102
f = 2400 MHz.
f = 1800 MHz.
f = 1000 MHz.
f = 900 MHz.
Fig.12 Minimum noise figure as a function of the
bias current (IVS-OUT); typical values.
1999 Jul 23
6
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
handbook, full pagewidth
90°
unstable region
source
135°
1.0
+1
45°
+2
+0.5
unstable
region load
0.6
(1)
(2)
+0.2
180°
0
0.5
0.4
+5
(3)
Γopt
0.2
1
0.8
0.2
2
5
0°
0
(4)
−0.2
f = 900 MHz; VVS-OUT = 2.5 V;
IVS-OUT = 10 mA; Zo = 50 Ω.
(1) G = 23 dB.
(2) G = 22 dB.
(3) G =21 dB.
(4) NF = 1.8 dB.
(5) NF = 2 dB.
(6) NF = 2.2 dB.
−5
(5)
(6)
−135°
−0.5
−2
− 45°
−1
1.0
− 90°
MGS547
Fig.13 Noise, stability and gain circles; typical values.
handbook, full pagewidth
90°
unstable region
source
135°
+1
+0.5
(3)
+2
(4)
unstable
region load
1.0
45°
0.8
(2)
0.6
(1)
+0.2
0.4
+5
0.2
180°
f = 1800 MHz; VVS-OUT = 2.5 V;
IVS-OUT = 10 mA; Zo = 50 Ω.
(1) Gmax = 16.1 dB.
(2) G = 16 dB.
(3) G = 15 dB.
(4) G = 14 dB.
(5) NF = 1.9 dB.
(6) NF = 2.1 dB.
(7) NF = 2.3 dB.
0.2
0
0.5
1
2
5
0°
Γopt
(5)
−0.2
−5
(6)
(7)
−135°
−0.5
−2
− 45°
−1
1.0
− 90°
MGS548
Fig.14 Noise, stability and gain circles; typical values.
1999 Jul 23
0
7
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
90°
handbook, full pagewidth
1.0
+1
135°
45°
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
180°
0.2
0
0.5
1
2
2 GHz
5
1 GHz
3 GHz
0
200 MHz
−5
500 MHz
−0.2
−0.5
−135°
0°
100 MHz
−2
− 45°
−1
1.0
− 90°
MGS549
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
135°
45°
500 MHz
900 MHz
1 GHz
200 MHz
1.8 GHz
100 MHz
180°
20
16
12
8
3 GHz
4
0°
−135°
− 45°
− 90°
MGS550
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
1999 Jul 23
8
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
90°
handbook, full pagewidth
135°
45°
3 GHz
180°
0.5
0.4
0.3
0.2
0.1
0°
100 MHz
−135°
− 45°
− 90°
MGS551
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω.
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
90°
handbook, full pagewidth
1.0
+1
135°
45°
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
180°
0.2
0
0.5
1
2
5
100 MHz
900 MHz
1 GHz
−0.2
−135°
3 GHz
−0.5
0°
0
200 MHz
−5
1.8 GHz 500 MHz
−2
− 45°
−1
1.0
− 90°
MGS552
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (s22); typical values.
1999 Jul 23
9
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
PACKAGE OUTLINE
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
SOT343R
1999 Jul 23
EUROPEAN
PROJECTION
10
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jul 23
11
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Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA 67
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Printed in The Netherlands
125006/04/pp12
Date of release: 1999
Jul 23
Document order number:
9397 750 06134