ONSEMI BU323AP

Order this document
by BU323AP/D
SEMICONDUCTOR TECHNICAL DATA
The BU323AP is a monolithic darlington transistor designed for automotive ignition,
switching regulator and motor control applications.
• Collector–Emitter Sustaining Voltage —
VCER(sus) = 475 Vdc
• 125 Watts Capability at 50 Volts
• VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6.0 A
• Photoglass Passivation for Reliability and Stability
DARLINGTON
NPN SILICON
POWER TRANSISTOR
400 VOLTS
125 WATTS
COLLECTOR
BASE
≈1k
≈ 30
EMITTER
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CASE 340D–02
TO–218 TYPE
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
VCEO(sus)
400
Vdc
Collector–Emitter Voltage
VCEV
475
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
10
16
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
3.0
Adc
Total Power Dissipation — TC = 25_C
— TC = 100_C
Derate above 25_C
PD
125
100
1.0
Watts
Watts
W/_C
TJ, Tstg
– 65 to + 200
_C
Symbol
Max
Unit
RθJC
1.0
_C/W
TL
275
_C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
10%.
REV 8
 Motorola, Inc. 1996
Motorola Bipolar Power Transistor Device Data
3–1
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BU323AP
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS1
Collector–Emitter Sustaining Voltage (Figure 1)
L = 10 mH
(IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO)
VCEO(sus)
Collector–Emitter Sustaining Voltage (Figure 1)
(IC = 3 A, RBE = 100 Ohms, L = 500 µH)
Unclamped
VCER(sus)
Vdc
400
Vdc
475
Collector Cutoff Current (Rated VCER, RBE = 100 Ohms)
ICER
1
mAdc
Collector Cutoff Current (Rated VCBO, IE = 0)
Emitter Cutoff Current (VEB = 6 Vdc, IC = 0)
ICBO
1
mAdc
IEBO
40
mAdc
ON CHARACTERISTICS1
DC Current Gain
(IC = 3 Adc, VCE = 6 Vdc)
(IC = 6 Adc, VCE = 6 Vdc)
(IC = 10 Adc, VCE = 6 Vdc)
hFE
300
150
50
Collector–Emitter Saturation Voltage
(IC = 3 Adc, IB = 60 mAdc)
(IC = 6 Adc, IB = 120 mAdc)
(IC = 10 Adc, IB = 300 mAdc
(IC = 6 Adc, IB = 120 mAdc, TC = – 40_C)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 6 Adc, IB = 120 mAdc)
(IC = 10 Adc, IB = 300 mAdc)
(IC = 6 Adc, IB = 120 mAdc, TC = – 40_C)
VBE(sat)
Base–Emitter On Voltage (IC = 10 Adc, VCE = 6 Vdc)
VBE(on)
550
350
150
2000
Vdc
1.5
1.7
2.7
2.0
Vdc
2.2
3
2.4
Diode Forward Voltage (IF = 10 Adc)
2.5
Vdc
Vf
2
3.5
Vdc
Cob
165
350
pF
ts
7.5
15
µs
tf
5.2
15
µs
IS/B
See
Figure 10
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS
Storage Time
( CC = 12 Vdc,, IC = 6 Adc,,
(V
IB1 = IB2 = 0.3 Adc) Fig. 2
Fall Time
FUNCTIONAL TESTS
Second Breakdown Collector Current with
Base–Forward Biased
Pulsed Energy Test (See Figure 12)
IC2L / 2
550
mJ
1Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
ftest = 200 Hz
PULSE WIDTH = 1 ms
VCC = 16 Vdc
UNCLAMPED
L
0V
t1
*
B
470
40
TUT
BC337
VCEO
VCER
≈ 1K
≈ 30
Vclamp
*
B
TUT
1N4001
51
100
≈ 1K
≈ 30
100
E
E
Figure 1. Sustaining Voltage Test Circuit
3–2
C
C
1N4001
* Adjust t1 such that
* IC reaches Required
* value.
2 Ω/20 W
IC = 6 Adc
0 Vdc
CLAMPED
47
20 ms
VCC = 12 Vdc
≈ 15 Vdc
IB = 0.3 Adc
Figure 2. Switching Times Test Circuit
Motorola Bipolar Power Transistor Device Data
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
BU323AP
2000
TJ = 150°C
hFE, DC CURRENT GAIN
1000
700
500
25°C
300
200
100
70
50
VCE = 3 Vdc
VCE = 6 Vdc
30
20
0.1
2
3
0.3
0.5 0.7 1
IC, COLLECTOR CURRENT (AMP)
0.2
5
7
10
3
TJ = 25°C
2.5
2
10 A
1.5
1
0.5
0.002
1.7
1.6
1.5
IC/IB = 50
TJ = 25°C
1.4
1.3
1.2
1.1
1.0
0.9
TJ = – 40°C
0.8
0.7
0.6
0.5
0.1
0.2
0.5
1.0
0.005 0.01
5.0
2.0
10
IC, COLLECTOR CURRENT (A)
1
2
2.1
2.0
TJ = 25°C
TJ = – 40°C
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.1
0.2
0.5
1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (A)
Figure 6. Base–Emitter Voltage
104
10
7
5
VCE = 250 Vdc
TJ = 150°C
IC, COLLECTOR CURRENT ( µA)
ts
3
t, TIME ( µs)
0.5
2.2
Figure 5. Collector–Emitter Saturation Voltage
2
tf
1
0.7
0.5
TJ = 25°C
IC/IB = 20
VCE = 12 Vdc
0.3
0.2
0.1
0.2
0.02
0.05 0.1 0.2
IB, BASE CURRENT (AMP)
Figure 4. Collector Saturation Region
VCE(sat) , COLLECTOR–EMITTER SATURATION VOLTAGE (V)
VCE(sat) , COLLECTOR–EMITTER SATURATION VOLTAGE (V)
Figure 3. DC Current Gain
6
3
IC = 0.5 A
0.3
0.5 0.7 1
2
3
5 7
IC, COLLECTOR CURRENT (AMP)
10
Figure 7. Turn–Off Switching Time
Motorola Bipolar Power Transistor Device Data
20
103
IC = ICES
102
101
100
75°C
25°C
FORWARD
10 –1 REVERSE
– 0.2
0
+ 0.2
+ 0.4
+ 0.6
VBE, BASE–EMITTER VOLTAGE (VOLTS)
+ 0.8
Figure 8. Collector Cutoff Region
3–3
BU323AP
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.01
0.02
P(pk)
RθJC(t) = r(t) RθJC
RθJC = °C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
0.05
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
t, TIME (ms)
10
20
50
100
200
500
1000
2000
Figure 9. Thermal Response
IC, COLLECTOR CURRENT (AMP)
50
20
10
100 µs
5.0 ms
5
2
1
1.0 ms
0.2
dc
0.1
0.01
0.005
TC = 25°C
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
5
10
20 30
200 300
50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
500
Figure 10. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a
transistor average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 10 is based on TC = 25_C, TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 11.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed by second breakdown.
INDUCTIVE LOAD
100
11 mH
POWER DERATING FACTOR (%)
<1
VCC = 16 Vdc
SECOND BREAKDOWN
DERATING
80
VZ
t1
0 Vdc
47
60
C
50 ms
THERMAL
DERATING
1N4001
2.2
B
470
BC337
TUT
40
≈ 1K
≈ 30
0.22
µF
100
VZ = 350 V (BU323P)
VZ = 400 V (BU323AP)
at IZ = 20 mA
20
0
0
40
80
120
TC, CASE TEMPERATURE (°C)
Figure 11. Power Derating
3–4
160
200
1N4001
E
t1 to be selected such that IC reaches 10 Adc before switch–off.
NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit.
Figure 12. Ignition Test Circuit
Motorola Bipolar Power Transistor Device Data
BU323AP
PACKAGE DIMENSIONS
C
Q
B
U
S
E
4
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
A
L
1
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
D
J
H
MILLIMETERS
MIN
MAX
–––
20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
–––
16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
INCHES
MIN
MAX
–––
0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
–––
0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
V
G
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 340D–02
TO–218 TYPE
ISSUE B
Motorola Bipolar Power Transistor Device Data
3–5
BU323AP
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3–6
◊
*BU323AP/D*
Motorola Bipolar Power Transistor DeviceBU323AP/D
Data