ONSEMI BUV48A

Order this document
by BUV48/D
SEMICONDUCTOR TECHNICAL DATA
15 AMPERES
NPN SILICON
POWER TRANSISTORS
400 AND 450 VOLTS
V(BR)CEO
850 – 1000 VOLTS
V(BR)CEX
150 WATTS
The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications such as:
•
•
•
•
•
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn–Off Times
60 ns Inductive Fall Time — 25_C (Typ)
120 ns Inductive Crossover Time — 25_C (Typ)
Operating Temperature Range – 65 to + 175_C
100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltage
Leakage Currents (125_C)
CASE 340D–02
TO–218 TYPE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
v
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage (VBE = –1.5 V)
Symbol
BUV48
BUV48A
Unit
VCEO(sus)
400
450
Vdc
VCEX
850
1000
Vdc
Emitter Base Voltage
VEB
7
Vdc
Collector Current — Continuous
— Peak (1)
— Overload
IC
ICM
IOI
15
30
60
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
5
20
Adc
Total Power Dissipation — TC = 25_C
— TC = 100_C
Derate above 25_C
PD
150
75
1
Watts
TJ, Tstg
– 65 to + 175
_C
Symbol
Max
Unit
RθJC
1
_C/W
TL
275
_C
Operating and Storage Junction Temperature Range
W/_C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
SWITCHMODE is a trademark of Motorola, Inc.
REV 8
 Motorola, Inc. 1996
Motorola Bipolar Power Transistor Device Data
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Î
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
v
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
400
450
—
—
—
—
—
—
—
—
0.2
2
—
—
—
—
0.5
3
IEBO
—
—
0.1
mAdc
V(BR)EBO
7
—
—
Vdc
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 200 mA, IB = 0) L = 25 mH
BUV48 BUV48
VCEO(sus)
BUV48A
Collector Cutoff Current
(VCEX = Rated Value, VBE(off) = 1.5 Vdc)
(VCEX = Rated Value, VBE(off) = 1.5 Vdc, TC = 125_C)
Collector Cutoff Current
(VCE = Rated VCEX, RBE = 10 Ω)
Vdc
ICEX
TC = 25_C
TC = 125_C
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
Emitter–Base Breakdown Voltage
(IE = 50 mA – IC = 0)
mAdc
ICER
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 12
RBSOA
See Figure 13
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 10 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
hFE
BUV48
BUV48A
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2 Adc)
(IC = 15 Adc, IB = 3 Adc)
(IC = 10 Adc, IB = 2 Adc, TC = 100_C)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 12 Adc, IB = 2.4 Adc)
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)
8
8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
5
2
1.5
5
2
—
—
—
—
—
—
—
—
1.6
1.6
1.6
1.6
Cob
—
—
350
pF
td
—
0.1
0.2
µs
tr
—
0.4
0.7
ts
—
1.3
2
tf
—
0.2
0.4
tsv
—
1.3
—
tfi
—
0.06
—
tsv
—
1.5
2.5
tc
—
0.3
0.6
tfi
—
0.17
0.35
VCE(sat)
BUV48
BUV48A
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2 Adc)
(IC = 10 Adc, IB = 2 Adc, TC = 100_C)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)
Vdc
VBE(sat)
BUV48
BUV48A
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
IC = 10 A
A, IB, = 2 A
IC = 8 A,, IB, = 1.6 A
Duty Cycle
2%, VBE(off) = 5 V
Tp = 30 µs,
µs VCC = 300 V
BUV48
BUV48A
Inductive Load, Clamped (Table 1)
Storage Time
Fall Time
IC = 10 A
IB1 = 2 A
BUV48
IC = 8 A
IB1 = 1.6 A
BUV48A
(TC = 25_C)
Storage Time
Crossover Time
Fall Time
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
Vcl = 300 V, VBE(off) = 5 V, Lc = 180 µH
2
(TC = 100_C)
µs
2%.
Motorola Bipolar Power Transistor Device Data
DC CHARACTERISTICS
90%
30
hFE, DC CURRENT GAIN
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
50
20
10%
10
7
5
3
2
VCE = 5 V
1
2
1
3
5
8 10
20
IC, COLLECTOR CURRENT (AMPS)
30
50
10
5
3
7.5 A
0.5
0.3
TC = 25°C
0.1
0.1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
90%
2
10%
1
0.7
0.5
0.3
0.2
0.1
1
2
3
5
7
10
20
30
50
2
3
4
βf = 5
2
1
0.7
TJ = 25°C
TJ = 100°C
0.5
0.3
0.1
0.3
1
3
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector–Emitter Saturation Voltage
Figure 4. Base–Emitter Voltage
104
10
10 k
VCE = 250 V
Cib
103
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT ( µA)
1
0.3
0.5
IB, BASE CURRENT (AMPS)
Figure 2. Collector Saturation Region
βf = 5
3
15 A
1
Figure 1. DC Current Gain
5
10 A
IC = 5 A
TJ = 150°C
102
125°C
101
100°C
REVERSE
FORWARD
75°C
1k
Cob
100
100
25°C
10–1
– 0.4
TJ = 25°C
– 0.2
0
0.2
0.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
Motorola Bipolar Power Transistor Device Data
0.6
10
1
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 6. Capacitance
3
Table 1. Test Conditions for Dynamic Performance
INPUT
CONDITIONS
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
33
2W
+10 V
D1
160
1
20
220
22 µF
RESISTIVE SWITCHING
+10 V
TURN–ON TIME
2N6438
1
D3
MR854
100
2
MM3735
0
IB1
22
680 pF
Ib1 ADJUST
D1 D2 D3 D4 1N4934
0.1 µF
2
680 pF
PULSES
δ = 3%
22
2N3763
D4
100
680 pF
PW Varied to Attain
IC = 200 mA
Ib2 ADJUST
dTb ADJUST
dT
MR854
IB1 adjusted to
obtain the forced
hFE desired
TURN–OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
160
33
2W
D3
0.22 µF
2N6339
Lcoil = 180 µH
Rcoil = 0.05 Ω
VCC = 20 V
Lcoil = 25 mH, VCC = 10 V
Rcoil = 0.7 Ω
OUTPUT WAVEFORMS
TEST CIRCUITS
INDUCTIVE TEST CIRCUIT
INPUT
Rcoil
1N4937
OR
EQUIVALENT
SEE ABOVE FOR
DETAILED CONDITIONS
IC(pk)
Lcoil
Vclamp
t1
pk
TUT
)
VCC
Lcoil (IC
pk
VClamp
RL
1
2
)
VCC
Test Equipment
Scope — Tektronix
475 or Equivalent
t
t2
VCE(pk)
90% VCE(pk)
90% IC(pk)
trv
tfi
tti
tc
10% VCE(pk)
90% IB1
t2 ≈
Lcoil (IC
10
IC pk
VCE
IB
t1 ≈
tf
VCE or
Vclamp
TIME
tsv
tf Clamped
t
VCE
VCC
RS =
0.1 Ω
2
IC
RESISTIVE TEST CIRCUIT
t1 Adjusted to
Obtain IC
IC
TUT
1
VCC = 300 V
RL = 83 Ω
Pulse Width = 10 µs
Vclamp = 300 V
RB ADJUSTED TO ATTAIN DESIRED IB1
10%
IC pk
2% IC
IB2(pk) , BASE CURRENT (AMPS)
CIRCUIT
VALUES
VCC
8
6
4
2
0
TIME
βf = 5
IC = 10 A
0
1
2
3
4
5
VBE(off), BASE–EMITTER VOLTAGE (VOLTS)
Figure 7. Inductive Switching Measurements
4
Figure 8. Peak–Reverse Current
Motorola Bipolar Power Transistor Device Data
6
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10 – 90% Vclamp
tfi = Current Fall Time, 90 – 10% IC
tti = Current Tail, 10 – 2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is
shown in Figure 7 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc) f
In general, trv + tfi
tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
]
INDUCTIVE SWITCHING
1
5
3
0.5
2
t, TIME ( µs)
t, TIME ( µs)
TC = 25°C
1
0.7
TC = 100°C
0.3
TC = 100°C
0.5
TC = 100°C
TC = 25°C
0.2
0.1
TC = 25°C
0.05
0.3
0.03
0.2
βf = 5
0.1
βf = 5
10
20
5
3
7
IC, COLLECTOR CURRENT (AMPS)
2
1
tc
tfi
0.02
30
0.01
50
1
2
Figure 9. Storage Time, tsv
3
2
tsv
1
1
0.5
0.5
0.3
0.2
tc
0.1
tfi
0.05
TC = 25°C
IC = 10 A
VBE(off) = 5 V
0.03
0.02
0.01
0
1
2
3
4
5
6
βf, FORCED GAIN
7
50
8
9
TC = 25°C
IC = 10 A
βf = 5 V
tsv
0.3
0.2
0.1
tc
0.05
tfi
0.03
0.02
10
Figure 11a. Turn–Off Times versus Forced Gain
Motorola Bipolar Power Transistor Device Data
30
Figure 10. Crossover and Fall Times
t, TIME ( µs)
t, TIME ( µs)
3
2
3
5
7
10
20
IC, COLLECTOR CURRENT (AMPS)
0.01
0
1
2
3
4
5
Ib2/Ib1
6
7
8
9
10
Figure 11b. Turn–Off Times versus Ib2/Ib1
5
The Safe Operating Area figures shown in Figures 12 and 13 are
specified for these devices under the test conditions shown.
30
SAFE OPERATING AREA INFORMATION
IC, COLLECTOR CURRENT (AMPS)
FORWARD BIAS
10
1 ms
5
DC
2
1
0.5
0.2
TC = 25°C
0.1
LIMIT ONLY
FOR TURN ON
0.05
0.01
v
tr ≤ 0.7 µs
0.02
1
2
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 12 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the
voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 14.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed by second breakdown.
10 20
100 200
500 1000
5
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 12. Forward Bias Safe Operating Area
50
IC, COLLECTOR CURRENT (AMPS)
REVERSE BIAS
40
30
BUV48
BUV48A
20
VBE(off) = 5 V
10
0
TC = 100°C
IC/IB ≥ 5
0
800
600
200
400
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage current conditions during reverse
biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche
mode. Figure 13 gives RBSOA characteristics.
FIgure 13. Reverse Bias Safe Operating Area
POWER DERATING FACTOR (%)
100
SECOND BREAKDOWN
DERATING
80
60
THERMAL DERATING
40
20
0
0
40
80
120
TC, CASE TEMPERATURE (°C)
160
200
Figure 14. Power Derating
6
Motorola Bipolar Power Transistor Device Data
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
D = 0.5
0.5
0.2
0.2
0.1
0.1
0.05
RθJC(t) = r(t) RθJC
θJC = 1°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
0.05
0.02
0.01
SINGLE PULSE
0.02
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
t, TIME (ms)
20
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1000
2000
Figure 15. Thermal Response
OVERLOAD CHARACTERISTICS
IC, COLLECTOR CURRENT (AMPS)
100
OLSOA
TC = 25°C
80
BUV48A
60
tp = 10 µs
40
BUV48
20
0
100
300
400 450
200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
500
Figure 16. Rated Overload Safe Operating Area
(OLSOA)
OLSOA applies when maximum collector current is limited
and known. A good example is a circuit where an inductor is
inserted between the transistor and the bus, which limits the
rate of rise of collector current to a known value. If the transistor is then turned off within a specified amount of time, the
magnitude of collector current is also known.
Maximum allowable collector–emitter voltage versus collector current is plotted for several pulse widths. (Pulse width
is defined as the time lag between the fault condition and the
removal of base drive.) Storage time of the transistor has
been factored into the curve. Therefore, with bus voltage and
maximum collector current known, Figure 16 defines the
maximum time which can be allowed for fault detection and
shutdown of base drive.
OLSOA is measured in a common–base circuit (Figure 18)
which allows precise definition of collector–emitter voltage
and collector current. This is the same circuit that is used to
measure forward–bias safe operating area.
5
IC (AMP)
4
RBE = 100 Ω
3
500 µF
500 V
RBE = 2.2 Ω
RBE = 10 Ω
2
1
Notes:
• VCE = VCC + VBE
• Adjust pulsed current source
for desired IC, tp
RBE = 0
0
2
4
6
dV/dt (KV/µs)
Figure 17. IC = f(dV/dt)
Motorola Bipolar Power Transistor Device Data
8
VCC
VEE
10
Figure 18. Overload SOA Test Circuit
7
PACKAGE DIMENSIONS
C
Q
B
U
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
4
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
A
L
1
K
2
3
D
J
H
MILLIMETERS
MIN
MAX
–––
20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
–––
16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
INCHES
MIN
MAX
–––
0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
–––
0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
V
G
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 340D–02
TO–218 TYPE
ISSUE B
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: [email protected] – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
8
◊
*BUV48/D*
Motorola Bipolar Power Transistor Device Data
BUV48/D