GaAs Hall Devices OH10003 GaAs Hall Device Magnetic sensor Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 ■ Features • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Sealed in the Mini type (4-pin) package. Allowing automatic insertion through the taping and the magazine package. 1.5 + 0.2 − 0.3 0.65 ± 0.15 0.95 3 2 + 0.1 0.4 − 0.05 + 0.1 0.16 − 0.06 1.9 ± 0.2 1 0.95 2.9 ± 0.2 0.5 R 4 • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment • Industrial equipment • Applicable to wide-varying field (OA equipment, etc.) 0.8 + 0.2 1.1 − 0.1 ■ Applications 0 to 0.1 0.4 ± 0.2 1 : VH Output (−) side 2 : VC Input (−) side 3 : VH Output (+) side 4 : VC Input (+) side Mini Type Package (4-pin) ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VC 12 V Control voltage Power dissipation PD 150 mW Operating ambient temperature Topr −30 to +125 °C Storage temperature Tstg −55 to +125 °C Marking Symbol: 3 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Hall voltage*1, 4 Unequilibrium Conditions VH ratio*2, 4 VC = 6 V, B = 0.1 T VHO/VH Input resistance ROUT IC = 6 mA, B = 0.1 T Temperature coefficient of input resistance α IC = 1 mA, B = 0 T Linearity of hall voltage*3 γ IC = 6 mA, B = 0.1 T/0.5 T *4 : Unit 170 mV 0.50 0.852 IC = 1 mA, B = 0 T β *2 : *3 : Max 150 ±12 IC = 1 mA, B = 0 T Temperature coefficient of hall voltage Note) *1 : Typ 130 VC = 6 V, B = 0 T/B = 0.1 T RIN Output resistance Min % kΩ 5 kΩ −0.06 %/°C 0.3 %/°C 2 % VH++VH− VH = 2 Unequilibrium ratio is a percentage of VHO with respect to VH. The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured respectively at B = 0.1 T and 0.5 T to their average. That is, KH5−KH1 VH γ= (the cumulative sensitivity KH = ) 1/2(KH1+KH5) IC・B VH, VHO/VH rank classification Class HQ HR IQ IR VH (mV) 130 to 158 142 to 170 130 to 158 142 to 170 VHO/VH (%) Marking Symbol −5 to +5 3HQ +2 to +12 3HR 3IQ 3IR KQ KR 130 to 158 142 to 170 −2 to −12 3KQ 3KR 1 OH10003 GaAs Hall Devices PD T a RIN Ta VH Ta 200 240 1 600 B = 1 kG IC = 6 mA 120 100 80 60 Input resistance RIN (Ω) 140 B=0 IC = 1 mA 1 400 200 160 Hall voltage VH (mV) Power dissipation PD (mW) 180 160 120 80 1 200 1 000 40 800 600 400 40 200 20 0 0 20 40 60 0 80 100 120 140 160 −40 Ambient temperature Ta (°C) 0 VH B Hall voltage VH (mV) Hall voltage VH (mV) 1 000 800 600 400 0.4 0.6 0.8 1.0 1.2 160 120 80 0 2 4 6 8 10 12 14 +9 V +9 V 4 − 1 + 2 −9 V −9 V 2 120 B = 1 kG Ta = 25°C 240 200 160 120 80 40 ■ Typical Drive Circuit 3 80 280 200 Control current IC (mA) Magnetic flux density B (T) 40 VH VC 240 0 0.2 0 320 40 200 0 −40 Ambient temperature Ta (°C) B = 1 kG Ta = 25°C 280 1 200 0 0 120 VH IC 320 VC = 6 V Ta = 25°C 1 400 80 Hall voltage VH (mV) 1 600 40 Ambient temperature Ta (°C) −V +V 16 0 0 2 4 6 8 10 12 14 Control voltage VC (V) 16