GaAs Hall Devices OH10004 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 ■ Applications • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment • Industrial equipment Symbol Rating Unit Control voltage VC 12 V Power dissipation PD 150 mW Operating ambient temperature Topr −30 to +125 °C Storage temperature Tstg −55 to +125 °C + 0.1 1.45 ± 0.2 0.95 0.95 3 2 + 0.1 0 to 0.1 0.4 ± 0.2 0.4 ± 0.2 φ 1.0 ± 0.025 1 : VH Output (−) side 2 : VC Input (−) side 3 : VH Output (+) side 4 : VC Input (+) side Mini Type Package (4-pin) with positioning projection ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 0.5 R 0.8 + 0.1 0.5 ± 0.1 1.1 − 0.05 2.9 ± 0.2 1.9 ± 0.2 4 0.65 ± 0.15 0.4 − 0.05 (0.5 R) 0.65 ± 0.15 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package. 0.16 − 0.06 ■ Features Marking Symbol: 4 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Hall voltage*1, 4 Unequilibrium Conditions VH ratio*2, 4 VC = 6 V, B = 0.1 T VHO/VH Input resistance Typ Max Unit 130 150 170 mV 0.50 0.85 ±12 VC = 6 V, B = 0 T/B = 0.1 T RIN Output resistance Min IC = 1 mA, B = 0 T ROUT IC = 1 mA, B = 0 T Temperature coefficient of hall voltage β IC = 6 mA, B = 0.1 T Temperature coefficient of input resistance α IC = 1 mA, B = 0 T Linearity of hall voltage*3 γ IC = 6 mA, B = 0.1 T/0.5 T % kΩ 5 kΩ −0.06 %/°C 0.3 %/°C 2 % VH++VH− 2 *2 : Unequilibrium ratio is a percentage of VHO with respect to VH. *3 : The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured respectively at B = 0.1 T and 0.5 T to their average. That is, KH5−KH1 VH γ= (the cumulative sensitivity KH = ) 1/2(KH1+KH5) IC・B *4 : VH, VHO/VH rank classification Note) *1 : VH = Class HQ HR IQ IR VH (mV) 130 to 158 142 to 170 130 to 158 142 to 170 VHO/VH (%) Marking Symbol −5 to +5 4HQ +2 to +12 4HR 4IQ 4IR KQ KR 130 to 158 142 to 170 −2 to −12 4KQ 4KR 1 OH10004 GaAs Hall Devices PD T a RIN Ta VH Ta 200 1 600 240 B = 1 kG IC = 6 mA 120 100 80 60 40 Input resistance RIN (Ω) 140 160 120 80 0 20 40 60 0 80 100 120 140 160 −40 0 40 80 600 400 0 120 800 600 400 0.6 0.8 1.0 1.2 200 160 120 80 0 2 4 6 8 10 12 14 ■ Typical Drive Circuit +9 V +9 V 4 3 − 1 + 2 −9 V −9 V 240 200 160 120 80 40 Control current IC (mA) Magnetic flux density B (T) 120 B = 1 kG Ta = 25°C 280 240 0 0.4 80 VH VC 40 200 40 320 Hall voltage VH (mV) Hall voltage VH (mV) 1 000 0.2 0 Ambient temperature Ta (°C) B = 1 kG Ta = 25°C 280 1 200 0 −40 VH IC 320 VC = 6 V Ta = 25°C 1 400 Hall voltage VH (mV) 800 Ambient temperature Ta (°C) VH B 1 600 2 1 000 200 Ambient temperature Ta (°C) 0 1 200 40 20 0 B=0 IC = 1 mA 1 400 200 160 Hall voltage VH (mV) Power dissipation PD (mW) 180 −V +V 16 0 0 2 4 6 8 10 12 14 Control voltage VC (V) 16