GaAs Hall Devices OH10008 GaAs Hall Device Unit : mm 1.45 ± 0.05 0.9 ± 0.05 ■ Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package. 3 2 0.2 max. 0.26 ± 0.05 5 0 to 0.15 5 0.6 ± 0.05 2.85 ± 0.25 • Thin and small hall motors (Applicable to CD, VD, VCR, FDD, and other portable equipment) • Automotive equipment • Measurement equipment • Applicable to wide-varying field (OA equipment, etc.) 0.5 ± 0.1 φ 1.0 ± 0.025 1 : VC Input (+) side 2 : VH Output (−) side 3 : VC Input (−) side 4 : VH Output (+) side Mini Type Package (4-pin) with positioning projection ■ Absolute Maximum Ratings Ta = 25°C Marking Symbol: B Symbol Rating Unit VC 12 V Control voltage 1 0.6 ± 0.1 1.45 ± 0.05 0.8 ± 0.1 ■ Applications Parameter 4 0.3 max. Magnetic sensor Power dissipation PD 100 mW Operating ambient temperature Topr −30 to +125 °C Storage temperature Tstg −55 to +125 °C ■ Electrical Characteristics Ta = 25°C Parameter Symbol Hall voltage*1 Unequilibrium ratio*2, 4 Input resistance Output resistance Conditions VH VC = 6 V, B = 0.1 T VHO VC = 6 V, B = 0 T RIN IC = 1 mA, B = 0 T ROUT IC = 1 mA, B = 0 T Min Typ Max Unit 80 105 130 mV ±19 mV 0.5 0.75 1.5 Temperature coefficient of hall voltage β IC = 6 mA, B = 0.1 T Temperature coefficient of input resistance α IC = 1 mA, B = 0 T Linearity of hall voltage*3 γ IC = 6 mA, B = 0.1 T/0.5 T kΩ 5 kΩ −0.06 %/°C 0.3 %/°C 2 % VH++VH− 2 *2 : Output pin voltage under no-load (B = 0) condition *3 : The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured respectively at B = 0.1 T and 0.5 T to their average. That is, KH5−KH1 VH γ= (the cumulative sensitivity KH = ) 1/2(KH1+KH5) IC・B *4 : VHO rank classification Note) *1 : VH = Class A B C D E VHO (mV) +19 to +9 +12 to +2 +5 to −5 −2 to −12 −9 to −19 1 OH10008 GaAs Hall Devices PD T a 240 1 600 B = 1 kG IC = 6 mA 180 120 100 80 60 40 Input resistance RIN (Ω) 140 160 120 80 0 20 40 60 0 80 100 120 140 160 −40 0 40 80 600 400 0 120 800 600 400 0.6 0.8 1.0 200 160 120 80 0 2 4 6 8 10 12 14 ■ Typical Drive Circuit +9 V +9 V 1 4 − 2 + 3 −9 V −9 V 240 200 160 120 80 40 Control current IC (mA) Magnetic flux density B (T) 120 B = 1 kG Ta = 25°C 280 240 0 0.4 80 VH VC 40 200 40 320 Hall voltage VH (mV) Hall voltage VH (mV) 1 000 0.2 0 Ambient temperature Ta (°C) B = 1 kG Ta = 25°C 280 1 200 0 −40 VH IC 320 VC = 6 V Ta = 25°C 1 400 Hall voltage VH (mV) 800 Ambient temperature Ta (°C) VH B 1 600 2 1 000 200 Ambient temperature Ta (°C) 0 1 200 40 20 0 B=0 IC = 1 mA 1 400 200 160 Hall voltage VH (mV) Power dissipation PD (mW) RIN Ta VH Ta 200 −V +V 16 0 0 2 4 6 8 10 12 14 Control voltage VC (V) 16