Transmissive Photosensors (Photo Interrupters) CNZ1111, CNZ1112 (ON1111, ON1112) Photo Interrupters Unit : mm CNZ1111 0.45±0.1 For contactless SW, object detection Mark for indicating LED side 6.0 min. Wide gap between emitting and detecting elements, suitable for thick plate detection 2-0.45±0.2 (2.54) (10.0) SEC. A-A' 3 2-ø3.2±0.2 19.0±0.2 2 6.2±0.2 Highly precise position detection : 0.3 mm 0.45±0.1 Device center A' Features 2.0±0.2 2.2±0.2 25.0±0.35 13.0±0.3 5.0±0.2 A 10.0±0.2 2.5±0.2 Overview CNZ1111 and CNZ1112 are a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. 2 1 3 4 1 Fast response : tr, tf = 6 µs (typ.) 4 Pin connection (Note) ( ) Dimension is reference Small output current variation against change in temperature V 50 mA PD*1 75 mW IC 20 mA Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO 30 V 5 V Collector power dissipation PC*2 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Temperature Mark for indicating LED side 13.0±0.3 5.0±0.2 A 2.0±0.2 2.2±0.2 3 IF 10.0±0.2 2.5±0.2 VR Collector current 0.45±0.1 Unit 0.45±0.1 Device center A' (10.0) 6.0 min. Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Symbol Ratings 2 6.2±0.2 Parameter Unit : mm CNZ1112 Absolute Maximum Ratings (Ta = 25˚C) 1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C. *1 2-0.45±0.2 (2.54) SEC. A-A' 3 4 2 3 1 4 Pin connection (Note) ( ) Dimension is reference Note) The part numbers in the parenthesis show conventional part number. 1 Transmissive Photosensors (Photo Interrupters) CNZ1111,CNZ1112 Electrical Characteristics (Ta = 25˚C) Parameter Symbol Forward voltage (DC) Input characteristics Reverse current (DC) Collector cutoff current Output characteristics Collector to emitter capacitance Conditions VF IF = 50mA IR VR = 3V ICEO min max 1.2 1.5 V 10 µA 200 nA VCE = 10V CC VCE = 10V, f = 1MHz 5 Collector current IC VCE = 10V, IF = 20mA Transfer Response time tr , tf* VCC = 10V, IC = 1mA, RL = 100Ω characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA * typ Unit pF 0.3 mA µs 6 0.3 V Switching time measurement circuit Sig.IN VCC td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) (Input pulse) Sig.OUT (Output pulse) RL td ;; ;; 50Ω 90% 10% tr tf IF , IC — Ta IF — V F 10 VCE = 10V Ta = 25˚C Ta = 25˚C IF 30 IC 20 10 40 Collector current 40 IC (mA) 50 IF (mA) 50 0 – 25 30 20 1 10 –1 10 –2 10 0 20 40 60 80 Ambient temperature Ta (˚C ) 2 IC — I F 60 Forward current Forward current, collector current IF , IC (mA) 60 100 0 0 0.4 0.8 1.2 1.6 2.0 Forward voltage VF (V) 2.4 10 –3 10 –1 1 10 Forward current IF (mA) 10 2 CNZ1111,CNZ1112 Transmissive Photosensors (Photo Interrupters) VF — Ta IC — VCE IC — Ta 10 2 1.6 160 VCE = 10V IF = 20mA 0.8 0.4 20 40 60 80 IC (%) 20mA 1 10mA 10 –1 10 –2 10 –1 100 Ambient temperature Ta (˚C ) 1 Collector to emitter voltage VCE (V) ICEO — Ta tr (µs) RL = 1kΩ 500Ω Rise time 10 –2 10 100Ω 1 Sig.IN VCC V1 50Ω Sig. V1 OUT V2 V2 RL 10 –3 0 20 40 60 80 Ambient temperature Ta (˚C ) 100 ; ; ICEO (µA) Dark current 10V 10 –1 10 –2 10 –1 40 60 80 100 100 VCC = 10V Ta = 25˚C 10 2 10 –4 – 40 – 20 20 IC — d 1 10 –1 0 Ambient temperature Ta (˚C ) tr — IC 10 3 10 VCE = 24V 40 0 – 40 – 20 10 2 10 80 tr td 90% 10% VCE = 10V Ta = 25˚C IF = 20mA IC (%) 0 IF = 30mA 120 80 Relative output current 0 – 40 – 20 10 Relative output current 10mA IC (mA) IF = 50mA 1.2 Collector current Forward voltage VF (V) Ta = 25˚C 60 Criterion 0 d 40 20 tf 1 Collector current IC (mA) 10 0 0 1 2 3 4 5 6 Distance d (mm) 3 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. 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