FDQ7238S Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package General Description Features The FDQ7238S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology. • Q2: 14 A, 30V. RDS(on) = 9.5 mΩ @ VGS = 10V RDS(on) = 10.5 mΩ @ VGS = 4.5V • Q1: 11 A, 30V. RDS(on) = 14.5 mΩ @ VGS = 10V RDS(on) = 16 mΩ @ VGS = 4.5V SO-14 pin 1 Vin G1 G2 S2 S2 S2 Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Drain Current - Continuous - Pulsed Power Dissipation for Single Operation PD (Note 1a) (Note 1a & 1b) (Note 1c & 1d) TJ, TSTG Q1 Units 30 ±16 30 ±16 V V 14 50 2.4 1.3 11 50 1.8 1.1 A −55 to +150 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Q2 °C Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) 52 68 (Note 1c & 1d) 94 118 Package Marking and Ordering Information W °C/W Device Marking Device Reel Size Tape width Quantity FDQ7238S FDQ7238S 13” 16mm 2500 units 2003 Fairchild Semiconductor Corporation FDQ7238S Rev A1 (W) FDQ7238S September 2003 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 10 mA, Referenced to 25°C Coefficient ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate-Body Leakage, Forward VGS = 16 V, VDS = 0 V IGSSR Gate-Body Leakage, Reverse VGS = −16 V, VDS = 0 V On Characteristics Type Min Typ Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 30 VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 µA ID = 10 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 14A, TJ = 125°C VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 11, TJ = 125°C VGS = 10 V, VDS = 5 V VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 14 A VDS = 10 V, ID = 11 A Q2 Q1 Q2 Q1 Q2 1 1 VDS = 15 V, f = 1.0 MHz Max Units V 26 25 mV/°C 500 1 100 100 −100 −100 µA 3 3 V nA nA (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On–State Drain Current gFS Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VGS = 0 V, VGS = 15 mVf = 1.0 MHz Q1 Q2 Q1 Q2 Q1 1.4 1.4 −3 −5 7 8 11 11 12 16 mV/°C 9.5 10.5 16 14.5 16 23 50 50 mΩ A 67 48 S Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 2872 1906 522 311 186 134 1.5 0.8 pF Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 14 11 13 13 51 28 18 15 48 33 6 4 8 4 pF pF Ω (Note 2) VDD = 15 V, VGS = 10V, ID = 1 A, RGEN = 6 Ω Q2 VDS = 15 V, ID = 14A, VGS = 10 V Q1 VDS = 15 V, ID = 11A,VGS = 10 V 25 20 23 23 82 45 32 27 67 46 nS nS nS nS nC nC nC FDQ7238S Rev A1 (W) FDQ7238S Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage trr Qrr trr Qrr Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.4 A VGS = 0 V, IS = 1.9 A VGS = 0 V, IS = 2.1 A IF = 14A diF/dt = 300 A/µs (Note 2) (Note 2) (Note 2) IF = 11A diF/dt = 100 A/µs Type Min Typ Q2 Q1 Q2 0.44 0.37 0.7 26 22 25 14 Q1 Q2 Q1 Max Units 34 2.1 0.7 A V 1.2 nS nC nS nC NOTE : 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 68°C/W when mounted on a 1in2 pad of 2 oz copper (Q1). c) 118°C/W when mounted on a minimum pad of 2 oz copper (Q1). b) 52°C/W when mounted on a 1in2 pad of 2 oz copper (Q2). d) 94°C/W when mounted on a minimum pad of 2 oz copper (Q2). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDQ7238S Rev A1 (W) FDQ7238S Electrical Characteristics FDQ7238S Typical Characteristics : Q2 60 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 50 2.2 3.0V 3.5V VGS = 10V 4.5V 40 2.5V 30 20 10 2 VGS = 2.5V 1.8 1.6 3.0V 1.4 3.5V 1.2 4.5V 10V 0.8 0 0 0.5 1 1.5 0 2 10 20 Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 -50 50 0.024 ID = 14A VGS =10V 1.6 40 -25 0 25 50 75 100 125 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) ID = 7A 0.022 0.02 0.018 0.016 0.014 TA = 125oC 0.012 0.01 0.008 TA = 25oC 0.006 150 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 70 100 TA = -55oC 60 25oC IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 6.0V 1 125oC 50 40 30 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 0.001 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDQ7238S Rev A1 (W) 4000 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 14A VDS = 10V 3200 CAPACITANCE (pF) 8 20V 6 4 2400 1600 COSS 2 800 0 0 CRSS 0 10 20 30 40 0 50 5 Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics. 100 50 DC 1 10s 100us P(pk), PEAK TRANSIENT POWER (W) 1ms 10ms 100ms RDS(ON) LIMIT 10 1s VGS = 10V SINGLE PULSE RθJA = 94oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 94°C/W TA = 25°C 40 30 20 10 0 0.01 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V CISS 15V 0.1 1 10 t1, TIME (sec) 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 RθJA = 94 °C/W 0.1 0.05 0.01 P(pk 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1d. Transient thermal response will change depending on the circuit board design FDQ7238S Rev A1 (W) FDQ7238S Typical Characteristics : Q2 FDQ7244S Typical Characteristics : Q2 SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power dissipated in the device. CURRENT : 0.8A/div IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDQ7238S Q2. 0.1 o TA = 125 C 0.01 o TA = 100 C 0.001 o TA = 25 C 0.0001 0.00001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TIME : 12nS/div Figure 12. FDQ7238S SyncFET body diode reverse recovery characteristic. Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. CURRENT : 0.8A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET(FDS6644). TIME : 12.5nS/div Figure 13. Non-SyncFET (FDS6644) body diode reverse recovery characteristic. FDQ7238S Rev A1 (W) FDQ7238S Typical Characteristics : Q1 ID, DRAIN CURRENT (A) 50 2.4 3.5V VGS = 10V 6.0V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 60 4.5V 40 30 2.5.V 20 10 2.2 VGS = 2.5V 2 1.8 1.6 3.0V 1.4 3.5V 1.2 4.5V 0 0.5 1 1.5 2 2.5 0 3 10 20 30 40 50 60 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 15. On-Region Characteristics. Figure 16. On-Resistance Variation with Drain Current and Gate Voltage. 0.036 1.8 ID = 11A VGS = 10V 1.6 ID = 5.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 0.8 0 1.4 1.2 1 0.8 0.032 0.028 0.024 TA = 125oC 0.02 0.016 0.012 TA = 25oC 0.6 -50 -25 0 25 50 75 100 125 0.008 150 2 o 4 TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 17. On-Resistance Variation with Temperature. Figure 18. On-Resistance Variation with Gate-to-Source Voltage. 60 100 TA = -55oC 50 25oC IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 6.0V 1 125oC 40 30 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 19. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 20. Body Diode Forward Voltage Variation with Source Current and Temperature. FDQ7238S Rev A1 (W) 10 2400 VGS, GATE-SOURCE VOLTAGE (V) ID = 11A VDS = 10V 15V 8 CAPACITANCE (pF) 20V 6 4 2 1600 1200 800 COSS 400 CRSS 0 0 0 5 10 15 20 25 30 35 0 5 Qg, GATE CHARGE (nC) 10 20 25 30 Figure 22. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 100µs RDS(ON) LIMIT 10 DC 1 1ms 10ms 100ms 1s 10s VGS = 10V SINGLE PULSE RθJA = 118oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 SINGLE PULSE RθJA = 118°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 23. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 21. Gate Charge Characteristics. ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V CISS 2000 Figure 24. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA(t) = r(t) * R θJA R θJA = 118 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 25. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c Transient thermal response will change depending on the circuit board design. FDQ7238S Rev A1 (W) FDQ7238S Typical Characteristics : Q1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5