FAIRCHILD FDQ7238S

FDQ7238S
Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package
General Description
Features
The FDQ7238S is designed to replace two single SO-8
MOSFETs in DC to DC power supplies. The high-side
switch (Q1) is designed with specific emphasis on
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET TM technology.
•
Q2: 14 A, 30V. RDS(on) = 9.5 mΩ @ VGS = 10V
RDS(on) = 10.5 mΩ @ VGS = 4.5V
•
Q1: 11 A, 30V. RDS(on) = 14.5 mΩ @ VGS = 10V
RDS(on) = 16 mΩ @ VGS = 4.5V
SO-14
pin 1
Vin
G1
G2
S2
S2
S2
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise noted
Parameter
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
- Continuous
- Pulsed
Power Dissipation for Single Operation
PD
(Note 1a)
(Note 1a & 1b)
(Note 1c & 1d)
TJ, TSTG
Q1
Units
30
±16
30
±16
V
V
14
50
2.4
1.3
11
50
1.8
1.1
A
−55 to +150
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Q2
°C
Thermal Resistance, Junction-to-Ambient (Note 1a & 1b)
52
68
(Note 1c & 1d)
94
118
Package Marking and Ordering Information
W
°C/W
Device Marking
Device
Reel Size
Tape width
Quantity
FDQ7238S
FDQ7238S
13”
16mm
2500 units
2003 Fairchild Semiconductor Corporation
FDQ7238S Rev A1 (W)
FDQ7238S
September 2003
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain-Source Breakdown Voltage VGS = 0 V,
ID = 1 mA
VGS = 0 V,
ID = 250 µA
Breakdown Voltage Temperature ID = 10 mA, Referenced to 25°C
Coefficient
ID = 250 µA, Referenced to 25°C
Zero Gate Voltage Drain Current VDS = 24 V,
VGS = 0 V
IGSSF
Gate-Body Leakage, Forward
VGS = 16 V,
VDS = 0 V
IGSSR
Gate-Body Leakage, Reverse
VGS = −16 V,
VDS = 0 V
On Characteristics
Type Min Typ
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
30
VDS = VGS,
ID = 1 mA
VDS = VGS,
ID = 250 µA
ID = 10 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VGS = 10 V,
ID = 14 A
VGS = 4.5 V,
ID = 13 A
VGS = 10 V, ID = 14A, TJ = 125°C
VGS = 10 V,
ID = 11 A
VGS = 4.5 V,
ID = 10 A
VGS = 10 V, ID = 11, TJ = 125°C
VGS = 10 V,
VDS = 5 V
VGS = 10 V,
VDS = 5 V
VDS = 10 V,
ID = 14 A
VDS = 10 V,
ID = 11 A
Q2
Q1
Q2
Q1
Q2
1
1
VDS = 15 V,
f = 1.0 MHz
Max Units
V
26
25
mV/°C
500
1
100
100
−100
−100
µA
3
3
V
nA
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VGS = 0 V,
VGS = 15 mVf = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
1.4
1.4
−3
−5
7
8
11
11
12
16
mV/°C
9.5
10.5
16
14.5
16
23
50
50
mΩ
A
67
48
S
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
2872
1906
522
311
186
134
1.5
0.8
pF
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
14
11
13
13
51
28
18
15
48
33
6
4
8
4
pF
pF
Ω
(Note 2)
VDD = 15 V,
VGS = 10V,
ID = 1 A,
RGEN = 6 Ω
Q2
VDS = 15 V, ID = 14A, VGS = 10 V
Q1
VDS = 15 V, ID = 11A,VGS = 10 V
25
20
23
23
82
45
32
27
67
46
nS
nS
nS
nS
nC
nC
nC
FDQ7238S Rev A1 (W)
FDQ7238S
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
trr
Qrr
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 3.4 A
VGS = 0 V,
IS = 1.9 A
VGS = 0 V,
IS = 2.1 A
IF = 14A
diF/dt = 300 A/µs
(Note 2)
(Note 2)
(Note 2)
IF = 11A
diF/dt = 100 A/µs
Type Min Typ
Q2
Q1
Q2
0.44
0.37
0.7
26
22
25
14
Q1
Q2
Q1
Max Units
34
2.1
0.7
A
V
1.2
nS
nC
nS
nC
NOTE :
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a)
68°C/W when
mounted on a 1in2 pad
of 2 oz copper (Q1).
c)
118°C/W when mounted
on a minimum pad of 2 oz
copper (Q1).
b)
52°C/W when
mounted on a 1in2 pad
of 2 oz copper (Q2).
d)
94°C/W when mounted on
a minimum pad of 2 oz
copper (Q2).
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDQ7238S Rev A1 (W)
FDQ7238S
Electrical Characteristics
FDQ7238S
Typical Characteristics : Q2
60
6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
50
2.2
3.0V
3.5V
VGS = 10V
4.5V
40
2.5V
30
20
10
2
VGS = 2.5V
1.8
1.6
3.0V
1.4
3.5V
1.2
4.5V
10V
0.8
0
0
0.5
1
1.5
0
2
10
20
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
-50
50
0.024
ID = 14A
VGS =10V
1.6
40
-25
0
25
50
75
100
125
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
ID = 7A
0.022
0.02
0.018
0.016
0.014
TA = 125oC
0.012
0.01
0.008
TA = 25oC
0.006
150
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
70
100
TA = -55oC
60
25oC
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
6.0V
1
125oC
50
40
30
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
0.001
0
0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDQ7238S Rev A1 (W)
4000
10
VGS, GATE-SOURCE VOLTAGE (V)
ID = 14A
VDS = 10V
3200
CAPACITANCE (pF)
8
20V
6
4
2400
1600
COSS
2
800
0
0
CRSS
0
10
20
30
40
0
50
5
Figure 7. Gate Charge Characteristics.
15
20
25
30
Figure 8. Capacitance Characteristics.
100
50
DC
1
10s
100us
P(pk), PEAK TRANSIENT POWER (W)
1ms
10ms
100ms
RDS(ON) LIMIT
10
1s
VGS = 10V
SINGLE PULSE
RθJA = 94oC/W
0.1
TA = 25oC
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 94°C/W
TA = 25°C
40
30
20
10
0
0.01
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
ID, DRAIN CURRENT (A)
f = 1MHz
VGS = 0 V
CISS
15V
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
0.1
RθJA = 94 °C/W
0.1
0.05
0.01
P(pk
0.02
0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1d.
Transient thermal response will change depending on the circuit board design
FDQ7238S Rev A1 (W)
FDQ7238S
Typical Characteristics : Q2
FDQ7244S
Typical Characteristics : Q2
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage. This
will increase the power dissipated in the device.
CURRENT : 0.8A/div
IDSS, REVERSE LEAKAGE CURRENT (A)
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDQ7238S Q2.
0.1
o
TA = 125 C
0.01
o
TA = 100 C
0.001
o
TA = 25 C
0.0001
0.00001
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
TIME : 12nS/div
Figure 12. FDQ7238S SyncFET body diode
reverse recovery characteristic.
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
CURRENT : 0.8A/div
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without
SyncFET(FDS6644).
TIME : 12.5nS/div
Figure 13. Non-SyncFET (FDS6644) body
diode reverse recovery characteristic.
FDQ7238S Rev A1 (W)
FDQ7238S
Typical Characteristics : Q1
ID, DRAIN CURRENT (A)
50
2.4
3.5V
VGS = 10V
6.0V
3.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
4.5V
40
30
2.5.V
20
10
2.2
VGS = 2.5V
2
1.8
1.6
3.0V
1.4
3.5V
1.2
4.5V
0
0.5
1
1.5
2
2.5
0
3
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 15. On-Region Characteristics.
Figure 16. On-Resistance Variation with
Drain Current and Gate Voltage.
0.036
1.8
ID = 11A
VGS = 10V
1.6
ID = 5.5A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10V
0.8
0
1.4
1.2
1
0.8
0.032
0.028
0.024
TA = 125oC
0.02
0.016
0.012
TA = 25oC
0.6
-50
-25
0
25
50
75
100
125
0.008
150
2
o
4
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance Variation with
Temperature.
Figure 18. On-Resistance Variation with
Gate-to-Source Voltage.
60
100
TA = -55oC
50
25oC
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
6.0V
1
125oC
40
30
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 19. Transfer Characteristics.
3.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 20. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDQ7238S Rev A1 (W)
10
2400
VGS, GATE-SOURCE VOLTAGE (V)
ID = 11A
VDS = 10V
15V
8
CAPACITANCE (pF)
20V
6
4
2
1600
1200
800
COSS
400
CRSS
0
0
0
5
10
15
20
25
30
35
0
5
Qg, GATE CHARGE (nC)
10
20
25
30
Figure 22. Capacitance Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
50
100µs
RDS(ON) LIMIT
10
DC
1
1ms
10ms
100ms
1s
10s
VGS = 10V
SINGLE PULSE
RθJA = 118oC/W
0.1
TA = 25oC
0.01
0.01
0.1
1
10
SINGLE PULSE
RθJA = 118°C/W
TA = 25°C
40
30
20
10
0
0.001
100
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 23. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 21. Gate Charge Characteristics.
ID, DRAIN CURRENT (A)
f = 1MHz
VGS = 0 V
CISS
2000
Figure 24. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R θJA(t) = r(t) * R θJA
R θJA = 118 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
T J - T A = P * R θJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 25. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c
Transient thermal response will change depending on the circuit board design.
FDQ7238S Rev A1 (W)
FDQ7238S
Typical Characteristics : Q1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™
ActiveArray™
FAST
Bottomless™
FASTr™
CoolFET™
FRFET™
CROSSVOLT™ GlobalOptoisolator™
DOME™
GTO™
EcoSPARK™ HiSeC™
E2CMOSTM
I2C™
TM
EnSigna
ImpliedDisconnect™
FACT™
ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5