FDS9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). 6.5 A, 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 43 mΩ @ VGS = 2.5 V. • Optimized for use in battery protection circuits • Low gate charge Applications • Battery protection • Load switch • Power management 5 6 4 3 Q1 7 8 Absolute Maximum Ratings Symbol 2 Q2 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ±10 ID Drain Current – Continuous (Note 1a) – Pulsed PD A 20 Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation TJ, TSTG 6.5 (Note 1a) W 1.6 (Note 1b) 1 (Note 1c) 0.9 –55 to +150 °C (Note 1a) 78 °C/W (Note 1) 40 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9926A FDS9926A 13’’ 12mm 2500 units 2003 Fairchild Semiconductor Corp. FDS9926A Rev E (W) FDS9926A July 2003 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±8 V, VDS = 0 V ±100 nA ID = 250 µA 1.5 V On Characteristics 20 V 14 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, 0.6 1 ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C –3 VGS = 4.5 V, ID = 6.5 A VGS = 2.5 V, ID = 5.4 A VGS = 4.5 V, ID =6.5A, TJ=125°C 25 35 35 ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 6.5 A 22 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 650 pF 150 pF 85 pF V GS = 15 mV, f = 1.0 MHz 1.4 Ω VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 8 16 ns ns mV/°C 30 43 50 mΩ 15 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time 9 17 td(off) Turn–Off Delay Time 15 26 ns tf Turn–Off Fall Time 4 9 ns Qg Total Gate Charge 6.2 9 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, VGS = 4.5 V ID = 3 A, 1.2 nC 1.7 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A trr Diode Reverse Recovery Time IF = 6.5 A, diF/dt = 100 A/µs Qrr Diode Reverse Recovery Charge (Note 2) 0.73 1.3 V 15 nS 5 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS9926A Rev E (W) FDS9926A Electrical Characteristics FDS9926A Typical Characteristics 20 2.4 VGS = 4.5V VGS = 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V ID, DRAIN CURRENT (A) 16 3.5 3.0V 12 8 2.0V 4 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 1.6 2.5V 1.4 3.0V 1.2 3.5V 4.0V 4.5V 1 2 0 Figure 1. On-Region Characteristics. 5 10 ID, DIRAIN CURRENT (A) 15 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.11 1.6 ID = 6.5A VGS = 4.5V ID = 3.25A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 0.8 0 1.4 1.2 1 0.8 0.6 0.09 0.07 o TA = 125 C 0.05 0.03 TA = 25oC 0.01 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 1 150 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 100 o TA = -55 C IS, REVERSE DRAIN CURRENT (A) VDS = 5V o 125 C ID, DRAIN CURRENT (A) 2.2 15 25oC 10 5 VGS = 0V 10 o TA = 125 C 1 25oC 0.1 o -55 C 0.01 0.001 0.0001 0 0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9926A Rev E (W) FDS9926A Typical Characteristics 1000 VDS = 5V ID = 3 A f = 1 MHz VGS = 0 V 15V 800 4 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 600 Ciss 400 Coss 1 200 0 0 Crss 0 1 2 3 4 5 6 7 8 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 100µs RDS(ON) LIMIT ID, DRAIN CURRENT (A) P(pk), PEAK TRANSIENT POWER (W) 100 1ms 10ms 100ms 1s 10 10s DC 1 VGS = 4.5V SINGLE PULSE RθJA = 135oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA o 0.2 0.1 RθJA = 135 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS9926A Rev E (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5