MICROSEMI MS2209

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2209
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATION
Features
•
•
•
•
•
REFRACTORY/GOLD METALIZATION
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
EMITTER SITE BALLASTED
DESCRIPTION:
THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND,
HIGH PEAK PULSE POWER DEVICE SPECIFICALLY DESIGNED
FOR AVIONICS APPLICATIONS REQUIRING BROAD BANDWIDTH
WITH MODERATED DUTY CYCLE AND PULSE WIDTH
CONSTRAINTS SUCH AS GROUND/SHIP BASED DME/TACAN.
THIS DEVICE IS ALSO CAPABLE OF SPECIALIZED
APPLICATIONS INCLUDING JTIDS WITH REDUCED POWER
UNDER PULSE FORMATS UTILIZING SHORT PULSE WIDTHS
AND HIGH BURST OR OVERALL DUTY CYCLES.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
PDISS
Parameter
Power Dissipation* (TC≤100ºC)
IC
VCC
TJ
T STG
Device Current *
Collector Supply Voltage*
Junction Temperature
Storage Temperature
Value
Unit
220
W
7.0
50
250
-65 to +200
A
V
°C
°C
0.80
°C/W
Thermal Data
RTH(J-C)
Junction - Case Thermal Resistance
*Applies only to rated RF amplifier operation
MSC0930.PDF 10-13-98
MS2209
ELECTRICAL SPECIFICATIONS (Tcase
(Tcase = 25°
25° C)
STATIC
Symbol
Bvebo
Bvcbo
Bvcer
Icbo
HFE
Test Conditions
IE = 10 mA
IC = 40 mA
IC = 40 mA
VCB = 50V
VCE = 5.0 V
IC=0 mA
IE=0 mA
RBE=10Ω
IC=2 A
Min.
Value
Typ.
Max.
Unit
3.0
65
65
--20
-----------
------12
120
V
V
V
mA
B
DYNAMIC
Symbol
Min.
Value
Typ.
Max.
Unit
Pout
f=960-1215 MHz
Pin = 13W
VCC=50V
90
100
---
W
ηc
f=960-1215 MHz
Pin = 13W
VCC=50V
38
44
---
%
GP
f=960-1215 MHz
Pin = 13W
VCC=50V
8.4
---
---
dB
Conditions
Test Conditions
Pulse width=10µ
µsec, Duty Cycle= 10%
PACKAGE MECHANICAL DATA
MSC0930.PDF 10-13-98
MS2209
MSC0930.PDF 10-13-98