MICROSEMI MS2475

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2475
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
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DESIGNED FOR HIGH POWER PULSED IFF
720 WATTS (min.) IFF 1030 or 1090 MHz
REFRACTORY GOLD METALLIZATION
6.8 dB MIN. GAIN
LOW THERMAL RESISTANCE FOR RELIABILTY AND
RUGGEDNESS
30:1 LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
INPUT MATCHED, COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2475 is a silicon NPN power transistor designed for IFF
applications. The MS2475 is designed to exceed the high peak
power requirements of today's IFF systems. Hermetic sealing,
gold metalization and internal input matching provide superior
long term reliability and broadband performance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
VCC
IC
PDISS
TJ
T STG
Parameter
Collector-Supply Voltage*
Device Current*
(TC ≤ 100°°C)
Power Dissipation*
Junction Temperature
Storage Temperature
Value
Unit
55
45
1670
+200
- 65 to + 200
V
A
W
°C
°C
0.06
°C/W
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance*
* Applies only to rated RF operation.
MSC0937A.DOC 10-20-98
MS2475
ELECTRICAL SPECIFICATIONS (Tcase = 25°
25°C)
STATIC
Symbol
BVCBO
BVCER
BVEBO
ICES
hFE
Test Conditions
IC = 25 mA
IC = 25 mA
IE = 10 mA
VCE = 50 V
VCE =
5V
IE = 0 mA
RBE = 10 Ω
IC = 0 mA
VBE = 0 V
IC =
2A
Min.
Value
Typ.
Max.
Unit
65
65
3.5
---10
----------------
---------60
250
V
V
V
mA
----
Min.
Value
Typ.
Max.
Unit
720
35
6.8
----------
----------
W
%
dB
DYNAMIC
Symbol
POUT
VC
GP
Test Conditions
f = 1090 MHz
f = 1090 MHz
f = 1090 MHz
PIN = 150 W
PIN = 150 W
PIN = 150 W
VCC = 50 V
VCC = 50 V
VCC = 50 V
Note: Pulse width = 10µ
µ Sec. Duty Cycle = 1%
IMPEDANCE DATA:
FREQUENCY
1030 MHz
1090 MHz
MSC0937A.DOC 10-20-98
Zin
4.18 + j1.32
3.16 + j1.24
Zcl
0.81 + j0.55
0.75 + j0.60
MS2475
Test Circuit (1090 MHz)
MSC0937A.DOC 10-20-98
MS2475
1030 MHz Typical Circuit
MSC0937A.DOC 10-20-98
MS2475
PACKAGE MECHANICAL DATA
MSC0937A.DOC 10-20-98