MS2207 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Features • • • • • • • 1090 MHz 50 VOLTS 15:1 VSWR CAPABILITY INPUT / OUTPUT MATCHING POUT = 400 WATTS GP = 8.0 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2207 is a high power NPN bipolar transistor specifically designed for TCAS and Mode-S driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 15:1 output VSWR at rated conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol PDISS IC VCC TJ TSTG Parameter Power Dissipation Device Current Collector Supply Voltage Junction Temperature Storage Temperature Value Unit 880 24 55 200 -65 to +200 W A V °C °C 0.17 °C/W Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7113 Rev - 11-2002 MS2207 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25°C) STATIC Symbol BVCBO BVEBO BVCER Ices HFE Test Conditions IC = 50 mA IE = 15 mA IC = 50 mA VBE = 50 V VCE = 5 V IE = 0 mA IC = 0 mA RBE = 10Ω Ω VCE = 0 V IC = 5 A Min. Value Typ. Max. Unit 65 3.5 65 --10 ----------- ------30 200 V V V mA --- DYNAMIC Symbol POUT ηC GP Conditions Test Conditions Min. Value Typ. Max. Unit f = 1090 MHz PIN = 63W VCC = 50V 400 --- --- W f = 1090 MHz PIN = 63W VCC = 50V 45 --- --- % f = 1090 MHz PIN = 63W VCC = 50V 8.0 --- --- dB Pulse Width = 32µ µS Duty Cycle = 2% IMPEDANCE DATA FREQ ZIN(Ω) ZCL(Ω) 1025 MHz 2.4 + j 3.2 1.4 – j 2.2 1090 MHz 3.8 + j 2.5 1.6 – j 1.6 1150 MHz 2.3 + j 1.3 1.2 – j 1.1 PIN = 63 W VCC = 50 V 053-7113 Rev - 11-2002 MS2207 PACKAGE MECHANICAL DATA 053-7113 Rev - 11-2002