ADPOW MS2207

MS2207
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS
Features
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1090 MHz
50 VOLTS
15:1 VSWR CAPABILITY
INPUT / OUTPUT MATCHING
POUT = 400 WATTS
GP = 8.0 dB MINIMUM
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2207 is a high power NPN bipolar transistor
specifically designed for TCAS and Mode-S driver
applications. This device is designed for operation
under moderate pulse width and duty cycle pulse
conditions and is capable of withstanding 15:1 output
VSWR at rated conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation
Device Current
Collector Supply Voltage
Junction Temperature
Storage Temperature
Value
Unit
880
24
55
200
-65 to +200
W
A
V
°C
°C
0.17
°C/W
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
053-7113 Rev - 11-2002
MS2207
ELECTRICAL SPECIFICATIONS (Tcase = 25°
25°C)
STATIC
Symbol
BVCBO
BVEBO
BVCER
Ices
HFE
Test Conditions
IC = 50 mA
IE = 15 mA
IC = 50 mA
VBE = 50 V
VCE = 5 V
IE = 0 mA
IC = 0 mA
RBE = 10Ω
Ω
VCE = 0 V
IC = 5 A
Min.
Value
Typ.
Max.
Unit
65
3.5
65
--10
-----------
------30
200
V
V
V
mA
---
DYNAMIC
Symbol
POUT
ηC
GP
Conditions
Test Conditions
Min.
Value
Typ.
Max.
Unit
f = 1090 MHz
PIN = 63W
VCC = 50V
400
---
---
W
f = 1090 MHz
PIN = 63W
VCC = 50V
45
---
---
%
f = 1090 MHz
PIN = 63W
VCC = 50V
8.0
---
---
dB
Pulse Width = 32µ
µS
Duty Cycle = 2%
IMPEDANCE DATA
FREQ
ZIN(Ω)
ZCL(Ω)
1025 MHz
2.4 + j 3.2
1.4 – j 2.2
1090 MHz
3.8 + j 2.5
1.6 – j 1.6
1150 MHz
2.3 + j 1.3
1.2 – j 1.1
PIN = 63 W
VCC = 50 V
053-7113 Rev - 11-2002
MS2207
PACKAGE MECHANICAL DATA
053-7113 Rev - 11-2002