Order this document by MCT2/D SEMICONDUCTOR TECHNICAL DATA GlobalOptoisolator [CTR = 20% Min] The MCT and MCT2E devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. STYLE 1 PLASTIC Applications • General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • I/O Interfacing 6 • Solid State Relays • Monitor and Detection Circuits • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating 1 STANDARD THRU HOLE CASE 730A–04 SCHEMATIC Symbol Value Unit INPUT LED Reverse Voltage VR 3 Volts Forward Current — Continuous IF 60 mA LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C PD 120 mW 1.41 mW/°C OUTPUT TRANSISTOR Collector–Emitter Voltage VCEO 30 Volts Emitter–Collector Voltage VECO 7 Volts Collector–Base Voltage VCBO 70 Volts Collector Current — Continuous IC 150 mA Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C PD 150 mW 1.76 mW/°C VISO 7500 Vac(pk) PD 250 2.94 mW mW/°C 1 6 2 5 3 4 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) TA – 55 to +100 °C Tstg – 55 to +150 °C TL 260 °C 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. GlobalOptoisolator is a trademark of Motorola, Inc. REV 1 Optoelectronics Device Data Motorola Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Symbol Min Typ(1) Max Unit VF — — — 1.23 1.35 1.15 1.5 — — Volts Reverse Leakage Current (VR = 3 V) IR — 0.01 10 µA Capacitance (V = 0 V, f = 1 MHz) CJ — 18 — pF Characteristic INPUT LED Forward Voltage (IF = 20 mA) TA = 25°C TA = –55°C TA = 100°C OUTPUT TRANSISTOR Collector–Emitter Dark Current (VCE = 10 V) TA = 25°C TA = 100°C ICEO — — 1 1 50 — nA µA Collector–Base Dark Current (VCB = 10 V) TA = 25°C TA = 100°C ICBO — — 0.2 100 20 — nA Collector–Emitter Breakdown Voltage (IC = 1 mA) V(BR)CEO 30 45 — Volts Collector–Base Breakdown Voltage (IC = 10 µA) V(BR)CBO 70 100 — Volts Emitter–Collector Breakdown Voltage (IE = 100 µA) V(BR)ECO 7 7.8 — Volts DC Current Gain (IC = 5 mA, VCE = 5 V) hFE — 500 — — Collector–Emitter Capacitance (f = 1 MHz, VCE = 0 V) CCE — 7 — pF Collector–Base Capacitance (f = 1 MHz, VCB = 0 V) CCB — 19 — pF Emitter–Base Capacitance (f = 1 MHz, VEB = 0 V) CEB — 9 — pF IC (CTR)(2) 2 (20) 7 (70) — mA (%) COUPLED Output Collector Current (IF = 10 mA, VCE = 10 V) Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 16 mA) VCE(sat) — 0.19 0.4 Volts Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) ton — 2.8 — µs Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω,)(3) toff — 4.5 — µs Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) tr — 1.2 — µs Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) tf — 1.3 — µs Isolation Voltage (f = 60 Hz, t = 1 sec)(4) VISO 7500 — — Vac(pk) Isolation Resistance (V = 500 V)(4) RISO 1011 — — Ω Isolation Capacitance (V = 0 V, f = 1 MHz)(4) CISO — 0.2 — pF 1. 2. 3. 4. 2 Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For test circuit setup and waveforms, refer to Figure 11. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. Motorola Optoelectronics Device Data 2 VF, FORWARD VOLTAGE (VOLTS) PULSE ONLY PULSE OR DC 1.8 1.6 1.4 TA = –55°C 1.2 25°C 100°C 1 1 10 100 IF, LED FORWARD CURRENT (mA) 1000 I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) TYPICAL CHARACTERISTICS 10 NORMALIZED TO: IF = 10 mA 1 0.1 0.01 IF = 10 mA 20 16 5 mA 12 8 2 mA 4 1 mA 0 0 1 2 3 4 5 6 7 8 9 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 10 50 10 7 5 NORMALIZED TO TA = 25°C 2 1 0.7 0.5 0.2 0.1 –60 –40 –20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 100 Figure 4. Output Current versus Ambient Temperature 100 NORMALIZED TO: VCE = 10 V TA = 25°C 100 VCC = 10 V 50 20 t, TIME (µs) ICEO, COLLECTOR–EMITTER DARK CURRENT (NORMALIZED) Figure 3. Collector Current versus Collector–Emitter Voltage I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) IC , COLLECTOR CURRENT (mA) 24 1 2 5 10 20 IF, LED INPUT CURRENT (mA) Figure 2. Output Current versus Input Current Figure 1. LED Forward Voltage versus Forward Current 28 0.5 10 VCE = 30 V 10 RL = 1000 5 RL = 100 1 2 10 V 0.1 0 20 { { 40 60 80 TA, AMBIENT TEMPERATURE (°C) 100 Figure 5. Dark Current versus Ambient Temperature Motorola Optoelectronics Device Data 1 0.1 tf tf tr tr 0.2 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 100 Figure 6. Rise and Fall Times (Typical Values) 3 100 70 50 VCC = 10 V 20 RL = 1000 10 7 5 100 t off , TURN–OFF TIME ( µ s) t on, TURN–ON TIME ( µs) 100 70 50 10 VCC = 10 V 20 RL = 1000 10 7 5 100 10 2 2 1 0.1 0.2 0.5 0.7 1 2 5 7 10 IF, LED INPUT CURRENT (mA) 20 1 0.1 50 70 100 0.2 20 50 70 100 Figure 8. Turn–Off Switching Times (Typical Values) 20 4 IF = 0 IB = 7 µA 18 6 µA 16 3 5 µA 4 µA 2 3 µA 1 0 2 C, CAPACITANCE (pF) IC ,TYPICAL COLLECTOR CURRENT (mA) Figure 7. Turn–On Switching Times (Typical Values) 0.5 0.7 1 2 5 7 10 IF, LED INPUT CURRENT (mA) 12 10 6 1 µA 2 Figure 9. DC Current Gain (Detector Only) CEB 8 4 20 f = 1 MHz CCB 14 2 µA 4 6 8 10 12 14 16 18 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) CLED CCE 0 0.05 0.1 0.2 0.5 1 2 5 V, VOLTAGE (VOLTS) 10 20 50 Figure 10. Capacitances versus Voltage TEST CIRCUIT WAVEFORMS INPUT PULSE VCC = 10 V RL = 100 Ω IF = 10 mA INPUT 10% OUTPUT OUTPUT PULSE 90% tr tf toff ton Figure 11. Switching Time Test Circuit and Waveforms 4 Motorola Optoelectronics Device Data PACKAGE DIMENSIONS –A– 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4 –B– 1 3 F 4 PL C N –T– L K SEATING PLANE J 6 PL 0.13 (0.005) G M E 6 PL D 6 PL 0.13 (0.005) M T A B M M T B M M A M DIM A B C D E F G J K L M N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.300 BSC 0_ 15 _ 0.015 0.100 STYLE 1: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 7.62 BSC 0_ 15 _ 0.38 2.54 ANODE CATHODE NC EMITTER COLLECTOR BASE CASE 730A–04 ISSUE G –A– 6 4 –B– 1 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 F 4 PL L H C –T– G J K 6 PL E 6 PL 0.13 (0.005) D 6 PL 0.13 (0.005) M T A M B M SEATING PLANE T B M A M CASE 730C–04 ISSUE D Motorola Optoelectronics Device Data M DIM A B C D E F G H J K L S INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.020 0.025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.51 0.63 0.20 0.30 0.16 0.88 8.13 BSC 8.43 9.90 *Consult factory for leadform option availability 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. –A– 6 4 –B– 1 3 L N F 4 PL C –T– SEATING PLANE G J K DIM A B C D E F G J K L N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.400 0.425 0.015 0.040 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 10.16 10.80 0.38 1.02 D 6 PL E 6 PL 0.13 (0.005) M T A M B M *Consult factory for leadform option availability CASE 730D–05 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. 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