MOTOROLA H11G2

Order this document
by H11G1/D
SEMICONDUCTOR TECHNICAL DATA
[CTR = 1000% Min]
GlobalOptoisolator
! !
! "!"! ! The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs
optically coupled to silicon photodarlington detectors which have integral
base–emitter resistors. The on–chip resistors improve higher temperature
leakage characteristics. Designed with high isolation, high CTR, high voltage
and low leakage, they provide excellent performance.
[CTR = 1000% Min]
[CTR = 200% Min]
*Motorola Preferred Devices
STYLE 1 PLASTIC
• High CTR, H11G1 & H11G2 — 1000% (@ IF = 10 mA), 500% (@ IF = 1 mA)
• High V(BR)CEO, H11G1 — 100 Volts, H11G2 — 80 Volts
• To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
6
Applications
• Interfacing and coupling systems of different potentials and impedances
1
STANDARD THRU HOLE
CASE 730A–04
• Phase and Feedback Controls
• General Purpose Switching Circuits
• Solid State Relays
SCHEMATIC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
1
6
2
5
3
4
INPUT LED
Reverse Voltage
VR
6
Volts
Forward Current — Continuous
IF
60
mA
Forward Current — Peak
Pulse Width = 300 µs, 2% Duty Cycle
IF
3
Amps
LED Power Dissipation @ TA = 25°C
Derate above 25°C
PD
120
1.41
mW
mW/°C
VCEO
100
80
55
Volts
VEBO
7
Volts
Collector Current — Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
PD
150
1.76
mW
mW/°C
PD
250
2.94
mW
mW/°C
OUTPUT DETECTOR
Collector–Emitter Voltage
H11G1
H11G2
H11G3
Emitter–Base Voltage
PIN 1.
2.
3.
4.
5.
6.
ANODE
CATHODE
N.C.
EMITTER
COLLECTOR
BASE
TOTAL DEVICE
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Operating Junction Temperature Range(2)
Storage Temperature Range(2)
Soldering Temperature (10 s)
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
TA
– 55 to +100
°C
Tstg
– 55 to +150
°C
TL
260
°C
VISO
7500
Vac(pk)
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 1
Optoelectronics
Device Data
Motorola
Motorola, Inc.
1995
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Symbol
Min
Typ(1)
Reverse Leakage Current (VR = 3 V)
IR
—
0.05
10
µA
Forward Voltage IF = 10 mA)
VF
—
1.1
1.5
Volts
Capacitance (V = 0 V, f = 1 MHz)
CJ
—
18
—
pF
100
80
55
—
—
—
—
—
—
100
80
55
—
—
—
—
—
—
7
—
—
Volts
—
—
—
—
—
—
—
—
—
—
100
100
100
100
100
nA
µA
nA
µA
nA
—
6
—
pF
100 (1000)
5 (500)
2 (200)
—
—
—
—
—
—
—
—
—
0.75
0.85
0.85
1
1
1.2
7500
—
—
Vac(pk)
—
1011
—
Ohms
CIO
—
2
—
pF
ton
—
5
—
µs
toff
—
100
—
Characteristic
Max
Unit
INPUT LED
DARLINGTON OUTPUT (TA = 25°C and IF = 0 unless otherwise noted)
Collector–Emitter Breakdown Current
(IC = 1 mA, IF = 0)
V(BR)CEO
Volts
H11G1
H11G2
H11G3
Collector–Base Breakdown Voltage
(IC = 100 µA, IF = 0)
V(BR)CBO
Volts
H11G1
H11G2
H11G3
Emitter–Base Breakdown Voltage (IE = 100 µA, IF = 0)
Collector–Emitter Dark Current
(VCE = 80 V)
(VCE = 80 V, TA = 80°C)
(VCE = 60 V)
(VCE = 60 V, TA = 80°C)
(VCE = 30 V)
V(BR)EBO
ICEO
H11G1
H11G1
H11G2
H11G2
H11G3
Capacitance (VCB = 10 V, f = 1 MHz)
CCB
COUPLED (TA = 25°C unless otherwise noted)
IC (CTR)(2)
Collector Output Current
(VCE = 1 V, IF = 10 mA)
(VCE = 5 V, IF = 1 mA)
(VCE = 5 V, IF = 1 mA)
H11G1, 2
H11G1, 2
H11G3
Collector–Emitter Saturation Voltage
(IF = 1 mA, IC = 1 mA)
(IF = 16 mA, IC = 50 mA)
(IF = 20 mA, IC = 50 mA)
H11G1, 2
H11G1, 2
H11G3
mA (%)
VCE(sat)
Isolation Surge Voltage(3,4) (60 Hz ac Peak, 1 Second)
VISO
Isolation Resistance(3) (V = 500 Vdc)
Isolation Capacitance(3) (V = 0 V, f = 1 MHz)
Volts
SWITCHING (TA = 25°C)
Turn–On Time
Turn–Off Time
1.
2.
3.
4.
2
(IF = 10 mA, VCC = 5 V, RL = 100 Ω,
Pulse Width
300 µs, f = 30 Hz)
p
Always design to the specified minimum/maximum electrical limits (where applicable).
Current Transfer Ratio (CTR) = IC/IF x 100%.
For this test, Pins 1 and 2 are common, and Photodarlington Pins 4 and 5 are common.
Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
Motorola Optoelectronics Device Data
TYPICAL CHARACTERISTICS
100
IC, NORMALIZED OUTPUT CURRENT
IC, NORMALIZED OUTPUT CURRENT
100
10
IF = 50 mA
1
0.1
0.01
0.1
1
10
100
IF, IRED INPUT CURRENT (mA)
IF = 1 mA
0.1
–60
1000
NORMALIZED TO:
TA = 25°C
IF = 1 mA (300 µs PULSES)
VCE = 5 V
1
Figure 1. Output Current versus Input Current
IF = 0.5 mA
–40
–20
0
20
40
60
80 100
TA, AMBIENT TEMPERATURE (°C)
120
140
Figure 2. Output Current versus Temperature
2
100
IF = 50 mA
VF , FORWARD VOLTAGE (VOLTS)
IC, NORMALIZED OUTPUT CURRENT
IF = 5 mA
10
NORMALIZED TO:
VCE = 5 V
IF = 1 mA (300 µs PULSES)
IF = 10 mA
10
IF = 2 mA
IF = 1 mA
1
IF = 0.5 mA
NORMALIZED TO:
TA = 25°C
IF = 1 mA (300 µs PULSES)
VCE = 5 V
0.1
0.01
0.2
10
1
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
PULSE ONLY
PULSE OR DC
1.8
1.6
1.4
TA = –55°C
1.2
25°C
100°C
1
1
20
10
100
1000
IF, LED FORWARD CURRENT (mA)
Figure 3. Output Current versus
Collector–Emitter Voltage
Figure 4. LED Forward Characteristics
100 k
10
VCE = 80 V
IF, FORWARD CURRENT (mA)
I CEO, DARK CURRENT
10 k
VCE = 30 V
1000
100
VCE = 10 V
10
1
0
10
20
30
40
50
60
70
TA, AMBIENT TEMPERATURE (°C)
80
90
Figure 5. Collector–Emitter Dark Current
versus Temperature
Motorola Optoelectronics Device Data
100
RL = 10 Ω
RL = 100 Ω
RL = 1 kΩ
1
0.1
0.1
NORMALIZED TO:
IF = 10 mA
RL = 100 OHMS
VCC = 5 V
1
ton + toff, TOTAL SWITCHING SPEED (NORMALIZED)
10
Figure 6. Input Current versus Total
Switching Speed (Typical Values)
3
INTERFACING TTL OR CMOS LOGIC TO 50–VOLT, 1000–OHMS RELAY
FOR TELEPHONY APPLICATIONS
In order to interface positive logic to negative–powered electromechanical relays, a change in voltage level and polarity plus
electrical isolation are required. The H11Gx can provide this interface and eliminate the external amplifiers and voltage divider
networks previously required. The circuit below shows a typical approach for the interface.
VDD
R
TO 1
H11Gx
CMOS
TO 2
1
6
2
5
5V
180 Ω
1/4 W
RELAY GROUND
TO 1
3
4
1000 Ω
–50 V
TTL
TO 2
50 mA
1N4004
4
Motorola Optoelectronics Device Data
PACKAGE DIMENSIONS
–A–
6
4
–B–
1
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
3
F 4 PL
C
N
–T–
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
ANODE
CATHODE
NC
EMITTER
COLLECTOR
BASE
K
SEATING
PLANE
J 6 PL
0.13 (0.005)
G
M
E 6 PL
D 6 PL
0.13 (0.005)
M
T A
B
M
M
T B
M
M
A
M
DIM
A
B
C
D
E
F
G
J
K
L
M
N
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.300 BSC
0_
15 _
0.015
0.100
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
7.62 BSC
0_
15 _
0.38
2.54
CASE 730A–04
ISSUE G
–A–
6
4
–B–
1
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
F 4 PL
L
H
C
–T–
G
J
K 6 PL
E 6 PL
0.13 (0.005)
D 6 PL
0.13 (0.005)
M
T A
M
B
M
SEATING
PLANE
T B
M
A
M
CASE 730C–04
ISSUE D
Motorola Optoelectronics Device Data
M
DIM
A
B
C
D
E
F
G
H
J
K
L
S
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.020
0.025
0.008
0.012
0.006
0.035
0.320 BSC
0.332
0.390
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.51
0.63
0.20
0.30
0.16
0.88
8.13 BSC
8.43
9.90
*Consult factory for leadform
option availability
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
–A–
6
4
–B–
1
3
L
N
F 4 PL
C
–T–
SEATING
PLANE
G
J
K
DIM
A
B
C
D
E
F
G
J
K
L
N
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.400
0.425
0.015
0.040
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
10.16
10.80
0.38
1.02
D 6 PL
E 6 PL
0.13 (0.005)
M
T A
M
B
M
*Consult factory for leadform
option availability
CASE 730D–05
ISSUE D
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
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6
◊
*H11G1/D*
Motorola Optoelectronics Device
Data
H11G1/D