Order this document by MBD301/D SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT–CARRIER DETECTOR AND SWITCHING DIODES • The Schottky Barrier Construction Provides Ultra–Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact • Extremely Low Minority Carrier Lifetime – 15 ps (Typ) • Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V • Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301 1 2 CASE 182– 02, STYLE 1 (TO–226AC) MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) MBD301 Rating MMBD301LT1 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25°C Derate above 25°C PF Operating Junction Temperature Range TJ 280 2.8 200 2.0 2 CATHODE mW mW/°C 3 °C – 55 to +125 Storage Temperature Range Tstg 1 ANODE 1 2 °C – 55 to +150 CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) DEVICE MARKING MMBD301LT1 = 4T 3 CATHODE 1 ANODE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)R 30 — — Volts CT — 0.9 1.5 pF t — 15 — ps Reverse Leakage (VR = 25 V) Figure 3 IR — 13 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF — 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF — 0.52 0.6 Vdc Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 Minority Carrier Lifetime (IF = 5.0 mA, Krakauer Method) Figure 2 NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk. Thermal Clad is a registered trademark of the Berquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 TYPICAL ELECTRICAL CHARACTERISTICS 500 2.8 t , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) f = 1.0 MHz 2.4 400 2.0 KRAKAUER METHOD 300 1.6 1.2 200 0.8 100 0.4 0 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 20 Figure 2. Minority Carrier Lifetime 10 TA = 100°C 1.0 75°C 0.1 25°C 0.01 0.001 10 10 TA = – 40°C TA = 85°C 1.0 TA = 25°C 0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 0.2 30 Figure 3. Reverse Leakage IF(PEAK) 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT SAMPLING OSCILLOSCOPE (50 W INPUT) Figure 5. Krakauer Method of Measuring Lifetime 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A ÉÉ ÉÉ ÉÉ ÉÉ R SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIM K MINIMUM. B D P L F K J SECTION X–X X X D G H V 1 C N 2 N CASE 182–02 (TO–226AC) ISSUE H L 3 B S V MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.49 0.41 0.56 0.407 0.482 1.27 BSC 3.54 BSC 0.36 0.41 12.70 ––– 6.35 ––– 2.03 2.66 ––– 1.27 2.93 ––– 3.43 ––– STYLE 1: PIN 1. ANODE 2. CATHODE 2 DIM A B C D G H J K L S V G C D INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.050 BSC 0.100 BSC 0.014 0.016 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.050 0.115 ––– 0.135 ––– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A 1 DIM A B C D F G H J K L N P R V H K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 J STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE CASE 318–08 ISSUE AE SOT–23 (TO–236AB) 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data *MBD301/D* MBD301/D