Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface mount applications. 3 • Extremely Low Minority Carrier Lifetime 1 • Very Low Capacitance 2 • Low Reverse Leakage CASE 419A–02, STYLE 2 SOT-323/SC–70 • Available in 8 mm Tape and Reel MAXIMUM RATINGS Rating Symbol Value Unit VR 7.0 30 70 Vdc Forward Power Dissipation TA = 25°C PF 120 mW Junction Temperature TJ – 55 to +125 °C Tstg – 55 to +150 °C Reverse Voltage MMBD110T1 MMBD330T1 MMBD770T1 Storage Temperature Range DEVICE MARKING MMBD110T1 = 4M MMBD330T1 = 4T MMBD770T1 = 5H Thermal Clad is a registered trademark of the Bergquist Company. Motorola Transistors, FETs and Diodes Device Data Motorola, Small–Signal Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Symbol MMBD110T1 MMBD330T1 MMBD770T1 Reverse Leakage (VR = 3.0 V) (VR = 25 V) (VR = 35 V) MMBD110T1 MMBD330T1 MMBD770T1 Noise Figure (f = 1.0 GHz, Note 2) MMBD110T1 2 Typ Max 7.0 30 70 10 — — — — — — — — 0.88 0.9 0.5 1.0 1.5 1.0 — — — 20 13 9.0 250 200 200 — 6.0 — — — — — — 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 V(BR)R MMBD110T1 MMBD330T1 MMBD770T1 Diode Capacitance (VR = 0, f = 1.0 MHZ, Note 1) (VR = 15 Volts, f = 1.0 MHZ) (VR = 20 Volts, f = 1.0 MHZ) Forward Voltage (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) Min Volts CT pF IR nAdc NF dB VF MMBD110T1 MMBD330T1 MMBD770T1 Unit Vdc Motorola Small–Signal Transistors, FETs and Diodes Device Data TYPICAL CHARACTERISTICS MMBD110T1 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 1.0 0.7 0.5 VR = 3.0 Vdc 0.2 0.1 0.07 0.05 10 TA = 85°C TA = – 40°C 1.0 0.02 TA = 25°C MMBD110T1 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (°C) 120 MMBD110T1 0.1 0.3 130 0.4 Figure 1. Reverse Leakage 0.8 11 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5) 10 9 0.9 NF, NOISE FIGURE (dB) C, CAPACITANCE (pF) 0.7 Figure 2. Forward Voltage 1.0 0.8 0.7 8 7 6 5 4 3 2 MMBD110T1 0.6 0.5 0.6 VF, FORWARD VOLTAGE (VOLTS) 0 1.0 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS) 4.0 Figure 3. Capacitance 1 0.1 MMBD110T1 0.2 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) 10 Figure 4. Noise Figure LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz NOTES ON TESTING AND SPECIFICATIONS Note 1 — CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 — Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Figure 5. Noise Figure Test Circuit Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 TYPICAL CHARACTERISTICS MMBD330T1 2.8 500 t , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MMBD330T1 f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 0 MMBD330T1 400 KRAKAUER METHOD 300 200 100 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 0 30 Figure 6. Total Capacitance 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100 100 MMBD330T1 IF, FORWARD CURRENT (mA) MMBD330T1 IR, REVERSE LEAKAGE (m A) 20 Figure 7. Minority Carrier Lifetime 10 TA = 100°C 1.0 TA = 75°C 0.1 TA = – 40°C 10 TA = 85°C 1.0 TA = 25°C 0.01 0.001 TA = 25°C 0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Reverse Leakage 4 10 24 30 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2 Figure 9. Forward Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data TYPICAL CHARACTERISTICS MMBD770T1 2.0 500 t , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MMBD770T1 f = 1.0 MHz 1.6 1.2 0.8 0.4 0 MMBD770T1 400 KRAKAUER METHOD 300 200 100 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 Figure 10. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 11. Minority Carrier Lifetime 10 100 MMBD770T1 MMBD770T1 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 20 TA = 100°C 1.0 TA = 75°C 0.1 10 TA = 85°C TA = – 40°C 1.0 0.01 TA = 25°C 0.001 TA = 25°C 0.1 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 Figure 12. Reverse Leakage Motorola Small–Signal Transistors, FETs and Diodes Device Data 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 2.0 Figure 13. Forward Voltage 5 INFORMATION FOR USING THE SOT–323/SC–70 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SOT–323/SC–70 SOT–323/SC–70 POWER DISSIPATION The power dissipation of the SOT–323/SC–70 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–323/SC–70 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C – 25°C 833°C/W = 150 milliwatts The 833°C/W for the SOT–323/SC–70 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–323/SC–70 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 6 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D V G C 0.05 (0.002) R N J K H CASE 419–02 ISSUE G SOT–323/SC–70 Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D G H J K L N R S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.031 0.039 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.90 1.25 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 0.80 1.00 2.00 2.20 0.30 0.40 STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE 7 Motorola reserves the right to make changes without further notice to any products herein. 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