KEC E30A2CDS

SEMICONDUCTOR
E30A2CDS, E30A2CDR
TECHNICAL DATA
STACK SILICON DIFFUSED DIODE
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
E
F
FEATURES
Average Forward Current : IO=30A.
L2
Reverse Voltage : 200V(Min)
POLARITY
(- Type)
G
D
E30A2CDR
(+ Type)
C
L1
E30A2CDS
B
A
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
200
V
Average Forward Current
IF(AV)
30
A
Peak 1 Cycle Surge Current
IFSM
Junction Temperature
Storage Temperature Range
300
(10ms Condition)
Tj
-40 200
Tstg
-40 200
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
DIM MILLIMETERS DIM MILLIMETERS
_ 0.1
_ 0.2
A
9.5 +
E
3.1+
_ 0.2
F
Φ1.5
B
8.4 +
G
R0.5
C
1.2
_ 0.4
L1
5+
D
1
DIM TYPE POLARITY
S
L2
R
MILLIMETERS
_ 1.0
19.0 +
_ 1.0
23.0 +
A
PD
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
-
-
1.20
V
200
-
-
V
Peak Forward Voltage
VFM
IFM=100A
Reverse Voltage
VRM
IR=5mA
Repetitive Peak Reverse Current
IRRM
VR=200V
-
-
50
A
IF=-IR 100mA
-
-
15
S
HIR
Ta=150 , VR=VRM
-
-
2.5
mA
Rth
Junction to case
-
1.0
-
trr
Reverse Recovery Time
Reverse Leakage Current Under
High Temperature
Temperature Resistance
2002. 10. 9
Revision No : 1
/W
1/1