SEMICONDUCTOR E30A2CDS, E30A2CDR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E F FEATURES Average Forward Current : IO=30A. L2 Reverse Voltage : 200V(Min) POLARITY (- Type) G D E30A2CDR (+ Type) C L1 E30A2CDS B A MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 200 V Average Forward Current IF(AV) 30 A Peak 1 Cycle Surge Current IFSM Junction Temperature Storage Temperature Range 300 (10ms Condition) Tj -40 200 Tstg -40 200 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC DIM MILLIMETERS DIM MILLIMETERS _ 0.1 _ 0.2 A 9.5 + E 3.1+ _ 0.2 F Φ1.5 B 8.4 + G R0.5 C 1.2 _ 0.4 L1 5+ D 1 DIM TYPE POLARITY S L2 R MILLIMETERS _ 1.0 19.0 + _ 1.0 23.0 + A PD ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - 1.20 V 200 - - V Peak Forward Voltage VFM IFM=100A Reverse Voltage VRM IR=5mA Repetitive Peak Reverse Current IRRM VR=200V - - 50 A IF=-IR 100mA - - 15 S HIR Ta=150 , VR=VRM - - 2.5 mA Rth Junction to case - 1.0 - trr Reverse Recovery Time Reverse Leakage Current Under High Temperature Temperature Resistance 2002. 10. 9 Revision No : 1 /W 1/1