BFY420 HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 22 GHz 4 3 1 2 SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor25 GHz fT-Line Space Qualified ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 02 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 BFY420 (ql) (ql) Quality Level: - see below C 2 E 3 Package 4 B E Micro-X P: Professional Quality H: High Rel Quality S: Space Quality ES: ESA Space Quality (see order instructions for ordering example) IFAG IMM RPD D HIR 1 of 4 V2, February 2011 BFY420 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 4.5 V Collector-base voltage VCBO 15 V Emitter-base voltage VEBO 1.5 V Collector current IC 35 mA Base current IB 3.0 mA Total power dissipation, 1), 2) TS 129°C Ptot 160 mW Junction temperature Tj 175 C Operating temperature range Top -65...+175 C Storage temperature range Tstg -65...+175 C Rth JS < 285 K/W Thermal Resistance Junction-soldering point 2) Notes.: 1) At TS = + 129 °C. For TS > + 129 °C derating is required. 2) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. ICBO - - 30 nA ICEX - - 200 µA DC Characteristics Collector-base cutoff current VCB = 5 V, IE = 0 Collector-emitter cutoff current 1.) VCE = 4.5 V, IB = 1.0µA Emitter-base cuttoff current (t.b.d.) IEBO - - 20 A hFE 50 90 150 - VEB = 1.5 V, IC = 0 DC current gain IC = 5 mA, VCE = 1 V Notes: 1.) This Test assures V(BR)CE0 > 4.5V IFAG IMM RPD D HIR 2 of 4 V2, February 2011 BFY420 Electrical Characteristics (continued) Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT GHz IC = 30mA, VCE = 3 V, f = 2.0 GHz Collector-base capacitance 20 22 - CCB - 0.14 0.9 pF CCE - 0.46 0.85 pF CEB - 0.67 3.0 pF F - 1.1 1.7 dB 14 18 - dB - 21 - dB - 12 - dBm VCB = 2 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 2 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz Noise Figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = Zsopt Insertion power gain 2 |S21e| IC = 20 mA, VCE = 2 V, f = 1.8 GHz ZS = ZL = 50 Power gain Gms 1.) IC = 20 mA, VCE = 2 V, f = 1.8 GHz ZS = ZSopt , ZL = ZLopt 1dB Compression point P-1dB IC = 20 mA, VCE = 2 V, f = 1.8 GHz ZS = ZSopt , ZL = ZLopt Notes.: 1) Gms S 21 S12 IFAG IMM RPD D HIR 3 of 4 V2, February 2011 BFY420 Micro-X Package 4 Edition 2011-02 3 Published by Infineon Technologies AG 1 2 85579 Neubiberg, Germany © Infineon Technologies AG 2011 All Rights Reserved. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IMM RPD D HIR 4 of 4 V2, February 2011