BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] f VDS PL(AV) Gp ηD ACPR885k ACPR1980k (MHz) (V) (W) (dB) (%) (dBc) (dBc) 3400 to 3600 28 4.5 15 24 −45[2] −61[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. [2] Measured within 30 kHz bandwidth. 1.2 Features n Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA: u Average output power = 4.5 W u Power gain = 15 dB u Drain efficiency = 24 % u ACPR885k = −45 dBc in 30 kHz bandwidth n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (3400 MHz to 3800 MHz) n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to 3800 MHz frequency range BLF6G38-25; BLF6G38S-25 NXP Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G38-25 (SOT608A) 1 drain 2 gate 3 source 1 1 [1] 2 3 3 2 sym112 BLF6G38S-25 (SOT608B) 1 drain 2 gate 3 source 1 [1] 1 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G38-25 - flanged ceramic package; 2 mounting holes; 2 leads SOT608A BLF6G38S-25 - ceramic earless flanged package; 2 leads SOT608B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 8.2 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Max Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 25 W BLF6G38-25 1.8 - K/W BLF6G38S-25 1.8 - K/W BLF6G38-25_BLF6G38S-25_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 23 December 2008 2 of 13 BLF6G38-25; BLF6G38S-25 NXP Semiconductors WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.4 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 40 mA 1.4 2 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.5 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 6 8.2 - A IGSS gate leakage current VGS = +11 V; VDS = 0 V - - 150 nA gfs forward transconductance VDS = 10 V; ID = 1.4 A - 2.8 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 1.4 A - 0.37 0.58 Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 0.59 - pF 7. Application information Table 7. Application information Mode of operation: 1-carrier N-CDMA; single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13); PAR = 9.7 dB at 0.01 % probability on the CCDF; channel bandwidth is 1.2288 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at VDS = 28 V; IDq = 225 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 4.5 W 12.5 15 RLin input return loss PL(AV) = 4.5 W ηD drain efficiency PL(AV) = 4.5 W ACPR885k adjacent channel power ratio (885 kHz) ACPR1980k adjacent channel power ratio (1980 kHz) [1] - dB - −10 - dB % 22 24 PL(AV) = 4.5 W [1] - - −45 −40 dBc PL(AV) = 4.5 W [1] - −61 −56 dBc Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G38-25 and BLF6G38S-25 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 225 mA; PL = PL(1dB); f = 3600 MHz. BLF6G38-25_BLF6G38S-25_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 23 December 2008 3 of 13 BLF6G38-25; BLF6G38S-25 NXP Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB. Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB Table 8. Frame structure Modulation technique Data length Zone 0 Frame contents FCH 2 symbols × 4 subchannels QPSK1/2 3 Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 7.2.2 Graphs 001aah594 30 EVM (%) 001aah595 18 48 ηD (%) Gp (dB) 24 16 36 Gp 18 14 24 12 12 12 (1) (2) (3) 6 0 10−1 ηD 1 10 10−1 102 10 PL (W) f = 3400 MHz (2) f = 3500 MHz (3) f = 3600 MHz Fig 1. EVM as function of load power; typical values VDS = 28 V; IDq = 225 mA; f = 3500 MHz; OFDMA signal; frame duration = 5 ms; bandwidth = 10 MHz; frequency band = WCS; n = 28 / 25; G = 1 / 8; FFT = 1024; zone type = PUSC; number of symbols = 46; number of subchannels = 30. Fig 2. Power gain and drain efficiency as functions of average load power; typical values BLF6G38-25_BLF6G38S-25_2 Product data sheet 0 102 10 PL(AV) (W) VDS = 28 V; IDq = 225 mA; OFDMA signal; frame duration = 5 ms; bandwidth = 10 MHz; frequency band = WCS; n = 28 / 25; G = 1 / 8; FFT = 1024; zone type = PUSC; number of symbols = 46; number of subchannels = 30. (1) 1 © NXP B.V. 2008. All rights reserved. Rev. 02 — 23 December 2008 4 of 13 BLF6G38-25; BLF6G38S-25 NXP Semiconductors WiMAX power LDMOS transistor 001aah596 −17 ACPR10M ACPR (dBc) −29 −41 −53 (2) (1) ACPR20M (1) (2) ACPR30M (2) (1) −65 10−1 1 102 10 PL(AV) (W) VDS = 28 V; IDq = 225 mA; f = 3500 MHz; OFDMA signal; frame duration = 5 ms; bandwidth = 10 MHz; frequency band = WCS; n = 28 / 25; G = 1 / 8; FFT = 1024; zone type = PUSC; number of symbols = 46; number of subchannels = 30. (1) Low frequency component (2) High frequency component Fig 3. Adjacent channel power ratio as function of average load power; typical values 7.3 Single carrier N-CDMA broadband performance at 9 W average 7.3.1 Graphs 001aah597 17 27 ηD (%) Gp (dB) 16 26 Gp 15 001aah598 −40 (1) (2) ACPR (dBc) −50 (1) (2) 25 ηD 14 ACPR1500k 24 (2) (1) −60 13 ACPR885k ACPR1980k 23 12 3400 3450 3500 22 3600 3550 −70 3400 3450 3500 f (MHz) 3550 3600 f (MHz) PL(AV) = 4.5 W. VDS = 28 V; IDq = 350 mA; PL(AV) = 4.5 W; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 4. Power gain and drain efficiency as functions of frequency; typical values Fig 5. Adjacent channel power ratio as function of frequency; typical values BLF6G38-25_BLF6G38S-25_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 23 December 2008 5 of 13 BLF6G38-25; BLF6G38S-25 NXP Semiconductors WiMAX power LDMOS transistor 001aah599 18 48 ηD (%) Gp (dB) 16 001aah600 −30 ACPR885k ACPR (dBc) −40 ACPR1500k 36 Gp (2) (1) −50 14 ACPR1980k (1) (2) 24 (2) (1) −60 12 12 ηD 10 10−1 1 0 102 10 −70 −80 10−1 1 102 10 PL (W) PL (W) VDS = 28 V; IDq = 225 mA; f = 3500 MHz; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. VDS = 28 V; IDq = 225 mA; f = 3500 MHz; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 6. Power gain and drain efficiency as functions of load power; typical values Fig 7. 001aah601 18 Gp (dB) Adjacent channel power ratio as function of average load power; typical values 001aah602 0.8 (3) (2) (1) Pi (W) (2) (1) (3) 16 0.6 14 0.4 12 0.2 10 10−1 1 0 10−1 102 10 PL (W) VDS = 28 V; IDq = 225 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 3400 MHz (1) f = 3400 MHz (2) f = 3500 MHz (2) f = 3500 MHz (3) f = 3600 MHz (3) f = 3600 MHz Power gain as function of load power; typical values Fig 9. Input power as function of load power; typical values BLF6G38-25_BLF6G38S-25_2 Product data sheet 102 10 PL (W) VDS = 28 V; IDq = 225 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. Fig 8. 1 © NXP B.V. 2008. All rights reserved. Rev. 02 — 23 December 2008 6 of 13 BLF6G38-25; BLF6G38S-25 NXP Semiconductors WiMAX power LDMOS transistor 8. Test information C16 C17 VGG VDD R3 C14 C12 L1 R1 C8 C6 C18 C20 C19 C10 C4 C2 C1 C21 C3 C5 C11 R2 C9 C7 BLF6G38-25 OUTPUT REV1 3.4 - 3.6 GHz C13 C15 NXP 001aah603 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit Table 9. List of components (see Figure 10) Component Description C1 multilayer ceramic chip capacitor 22 pF Value ATC 100A or equivalent C2, C3 multilayer ceramic chip capacitor 3 pF ATC 100A or equivalent C4, C5, C6, C7, C8, C9, C18 multilayer ceramic chip capacitor 10 pF Remarks ATC 100A or equivalent C10, C11 multilayer ceramic chip capacitor 24 pF ATC 100A or equivalent C12, C13 multilayer ceramic chip capacitor 4.7 µF; 50 V TDK C4532X7R1H475M or equivalent C14, C15 multilayer ceramic chip capacitor 1 nF ATC 700A or equivalent C16, C17 multilayer ceramic chip capacitor 100 nF Vishay VJ1206Y104KXB or equivalent C19 multilayer ceramic chip capacitor 10 µF; 50 V TDK C5750X7R1H106M or equivalent C20 electrolytic capacitor C21 multilayer ceramic chip capacitor 10 pF 470 µF; 63 V BLF6G38-25_BLF6G38S-25_2 Product data sheet ATC 100B or equivalent © NXP B.V. 2008. All rights reserved. Rev. 02 — 23 December 2008 7 of 13 BLF6G38-25; BLF6G38S-25 NXP Semiconductors WiMAX power LDMOS transistor Table 9. List of components (see Figure 10) …continued Component Description Value Remarks L1 ferrite SMD bead - Ferroxcube BDS3/3/4.6-4S2 or equivalent R1, R2 SMD resistor 20 Ω SMD 1206 R3 SMD resistor 9.1 Ω SMD 1206 Table 10. Measured test circuit impedances f ZS ZL MHz Ω Ω 3400 14.65 + j29.87 13.46 + j3.58 3450 14.16 + j28.69 13.56 + j4.12 3500 14.56 + j30.52 13.76 + j4.74 3550 17.49 + j30.11 13.97 + j5.41 3600 15.50 + j29.36 14.16 + j5.95 drain ZL gate ZS 001aag189 Fig 11. Definition of transistor impedance BLF6G38-25_BLF6G38S-25_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 23 December 2008 8 of 13 BLF6G38-25; BLF6G38S-25 NXP Semiconductors WiMAX power LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 D1 U1 B q c C 1 H E1 p U2 E w1 M A M B M 2 A w2 M C M b Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.62 3.76 7.24 6.99 0.15 0.10 10.21 10.29 10.01 10.03 inches 0.182 0.148 0.285 0.006 0.275 0.004 0.402 0.405 0.394 0.395 OUTLINE VERSION D D1 F H p Q q U1 U2 w1 w2 10.21 10.29 10.01 10.03 1.14 0.89 15.75 14.73 3.30 2.92 1.70 1.35 15.24 20.45 20.19 9.91 9.65 0.25 0.51 0.402 0.405 0.394 0.395 0.045 0.620 0.035 0.580 0.130 0.115 0.067 0.600 0.053 0.805 0.795 0.390 0.010 0.020 0.380 E E1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-02-22 02-02-11 SOT608A Fig 12. Package outline SOT608A BLF6G38-25_BLF6G38S-25_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 23 December 2008 9 of 13 BLF6G38-25; BLF6G38S-25 NXP Semiconductors WiMAX power LDMOS transistor Ceramic earless flanged package; 2 leads SOT608B D A F 3 D1 A U1 c 1 U2 H E E1 2 w1 b M A Q M 0 5 mm scale DIMENSIONS (mm dimensions are derived from the original inch dimensions) UNIT A b c mm 4.62 3.76 7.24 6.99 0.15 0.10 inch 0.182 0.285 0.006 0.402 0.405 0.402 0.405 0.045 0.620 0.067 0.403 0.403 0.020 0.148 0.275 0.004 0.394 0.395 0.394 0.395 0.035 0.580 0.053 0.393 0.393 OUTLINE VERSION D D1 E E1 10.21 10.29 10.21 10.29 10.01 10.03 10.01 10.03 F H Q 1.14 0.89 15.75 14.73 1.70 1.35 U1 U2 10.24 10.24 9.98 9.98 REFERENCES IEC JEDEC JEITA w1 0.51 EUROPEAN PROJECTION ISSUE DATE 06-11-27 06-12-06 SOT608B Fig 13. Package outline SOT608B BLF6G38-25_BLF6G38S-25_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 23 December 2008 10 of 13 BLF6G38-25; BLF6G38S-25 NXP Semiconductors WiMAX power LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function CW Continuous Wave ESD ElectroStatic Discharge EVM Error Vector Magnitude FCH Frame Control Header FFT Fast Fourier Transform IBW Instantaneous BandWidth IS-95 Interim Standard 95 LDMOS Laterally Diffused Metal-Oxide Semiconductor N-CDMA Narrowband Code Division Multiple Access OFDMA Orthogonal Frequency Division Multiple Access PAR Peak-to-Average power Ratio PUSC Partial Usage of SubChannels RF Radio Frequency QAM Quadrature Amplitude Modulation QPSK Quadrature Phase Shift Keying SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio WCS Wireless Communications Service WiMAX Worldwide Interoperability for Microwave Access 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G38-25_BLF6G38S-25_2 20081223 - Modifications: BLF6G38-25_BLF6G38S-25_1 Product data sheet • Changed the maximum drain current and the maximum junction temperature in Table 4 on page 2 • Moved impedance information to Section 8 20080218 Preliminary data sheet - BLF6G38-25_BLF6G38S-25_2 Product data sheet BLF6G38-25_BLF6G38S-25_1 - © NXP B.V. 2008. All rights reserved. Rev. 02 — 23 December 2008 11 of 13 BLF6G38-25; BLF6G38S-25 NXP Semiconductors WiMAX power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G38-25_BLF6G38S-25_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 23 December 2008 12 of 13 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 WiMAX signal description . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Single carrier N-CDMA broadband performance at 9 W average . . . . . . . . . . . . . . 5 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 23 December 2008 Document identifier: BLF6G38-25_BLF6G38S-25_2