BRIGHT LED ELECTRONICS CORP. SINCE 1981 DATA SHEET ● SHEET DATE 2002.04.01 1 2 DEVICE NUMBER：BPT-NP03C1 3 4 CONTENTS 1.0 1.0 1.0 1.0 Initial Released Date﹑Tosl﹑Dimensions 2003.04.04 1.1 1.1 1.1 1.0 2004.08.06 2.0 2.0 2.0 Formats Of Sheets 2004.10.20 2.1 2.0 2.0 Features 佰鴻工業股份有限公司 BRIGHT LED ELECTRONICS CORP. 台北縣板橋市和平路 19 號 3 樓 3F., No. 19, Ho Ping Road, Pan Chiao City, Taipei, Taiwan, R. O. C. Tel: 886-2-29591090 Fax: 886-2-29547006/29558809 www.brtled.com. APPROVED DRAWER 賈遠慶 肖美艷 BRIGHT LED ELECTRONICS CORP. BPT-NP03C1 SINCE 1981 SIDE- LOOK PACKAGE PHOTOTRANSISTOR ● Package Dimensions: ● Features 1. Wide range of collector current. 2. High sensitivity. 3. Low cost plastic package. 1.52(.060) 4.4(.173)±0.1 1.5(.059) 1.2(.047) 0.1 4. Lens Appearance: Water Clear. 5.7(.224) 5. This product doesn't contain restriction R0.76(.030) substance, comply ROHS standard 16.5(0.650) 0.40(.160) 1 ● Description 1.0(.04)MIN. 2 The BPT-NP03C1 is a NPN silicon phototransistor 0.40(.160) 2.54(.10) NOM. mounted in a lensed ,water clear plastic package . 1.Emitter The lensing effect of the package allows an 2.Collector acceptance half view angle of 50∘that is measured from the optical axis to the half power point . NOTES: 1.All dimensions are in millimeters (inches). 2.Tolerance is ±0.25mm (0.01’) unless otherwise specified. 3.Lead spacing is measured where the leads emerge from the package 4.Specifications are subject to change without notice ● Absolute Maximum Ratings(Ta=25℃) Parameter Maximum Rating Unit Power Dissipation 100 mW Collector- Emitter Voltage 30 V Emitter- Collector Voltage 5 V Operating Temperature -45℃~+85℃ Storage Temperature Range -45℃~+100℃ Lead Soldering Temperature 260℃ for 5 seconds Rev:2.1 Page1 of 3 BRIGHT LED ELECTRONICS CORP. BPT-NP03C1 SINCE 1981 ● Electrical Characteristics (TA=25℃ unless otherwise noted) PARAMETER Collector- Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector- Emitter Saturation Voltage SYMBOL MIN TYP MAX UNITS V(BR)CEO 30 - - V V(BR)ECO 5 - - V IR=0.1mA Ee=0 mW/cm2 VCE(SAT) - - 0.5 V IC=0.1mA Ee=1.0mW/cm2 Rise Time Tr - 10 - Fall Time Tf - 15 - Collector Dark Current Id - - IC (ON) - 3.5 Light Current TEST CONDITIONS IC=0.1 mA Ee=0mW/cm2 μS VCE =5V RL=1KΩ F=100HZ 100 nA VCE=10V Ee=0 mW/cm2 - mA VCE=5V Ee=1.0mW/cm2 ● Typical Optical-Electrical Characteristic Curves FIG.1 Dark Current Vs. Ambient Temperature (uA) 1000 100 100 80 Power Dissipation Pd 10000 (mW) 120 Dark Current 10 1 0.1 0.01 60 80 100 40 Ambient Temperature 60 40 20 0 120 (°C) -25 20 F=100Hz Tf Tr 8 4 0 0.2 25 50 75 100 Ambient Temperature 125 (°C) 2.5 Vcc=5V 12 0 0 FIG.4 Relative Collector Current Vs. Irradiance FIG.3 Rise And Fall Time Vs. Load Resistance 16 Rise and Fall Time 20 Relative Collector Current (us) 0 FIG.2 Power Dissipation Vs. Ambient Temperature 0.4 0.6 0.8 1.0 (K ) Vce=5V 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 2 3.0 (mW/cm ) Irradiance Load Resistance Rev:2.1 Page2 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPT-NP03C1 ● Tapping and packaging specifications(Units: mm) ● Packaging Bag Dimensions Notes: 1、1000pcs per bag, 8Kpcs per box. 2、All dimensions are in millimeters(inches). 3、Specifications are subject to change without notice. Rev:2.1 Page3 of 3 BRIGHT LED ELECTRONICS CORP. BPT-NP03C1 SINCE 1981 Phototransistor Specification Commodity: Phototransistor Collector Current Bin Limits (At 1mW/ cm2) BIN CODE Min.(mA) Max.(mA) P0 1.440 3.828 P1 2.552 4.788 P2 3.192 5.460 P3 3.640 6.420 P4 4.280 6.852 P5 5.632 8.808