isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU606 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed: tf= 0.75μs(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak Repetitive 10 A ICP Collector Current- Peak (10ms) 15 A IB Base Current 4 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU606 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 VCE=250V; VBE= 0 VCE=250V; VBE= 0;TC= 150℃ 5.0 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V, ftest= 20MHz Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz Fall Time IC= 5A; IB1= -IB2= 0.5A, L= 150μH VCC= 40V fT COB tf isc Website：www.iscsemi.cn CONDITIONS MIN TYP. 200 UNIT V B B 2 MAX 10 MHz 80 pF 0.75 μs