DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD77 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1999 Nov 15 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD77 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass SOD87 package through Implotec(1) technology. This package is • High maximum operating temperature hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability k handbook, 4 columns a • Shipped in 8 mm embossed tape • Smallest surface mount rectifier outline. MAM061 Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER CONDITIONS IF(AV) UNIT − 50 V BYD77B − 100 V BYD77C − 150 V BYD77D − 200 V BYD77E − 250 V BYD77F − 300 V BYD77G − 400 V BYD77A − 50 V BYD77B − 100 V continuous reverse voltage BYD77C − 150 V BYD77D − 200 V BYD77E − 250 V BYD77F − 300 V BYD77G − 400 V − 2.00 A − 1.85 A − 0.85 A − 0.80 A average forward current BYD77A to D BYD77E to G IF(AV) MAX. repetitive peak reverse voltage BYD77A VR MIN. average forward current BYD77A to D BYD77E to G 1999 Nov 15 Ttp = 105 °C; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 °C; PCB mounting (see Fig.16); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 2 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IFRM IFRM BYD77 series PARAMETER repetitive peak forward current CONDITIONS MIN. MAX. UNIT Ttp = 105 °C; see Figs 6 and 7 BYD77A to D − 15 A BYD77E to G − 13 A repetitive peak forward current Tamb = 60 °C; see Figs 8 and 9 BYD77A to D − 8.5 A BYD77E to G − 8.0 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 25 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = 25 °C prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C MIN. TYP. MAX. − − 0.75 V − − 0.83 V − − 0.98 V − − 1.05 V − − V ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD77A to D CONDITIONS IF = 1 A; Tj = Tj max; see Figs 12 and 13 BYD77E to G VF forward voltage BYD77A to D IF = 1 A; see Figs 12 and 13 BYD77E to G V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYD77A IR trr 55 BYD77B 110 − − V BYD77C 165 − − V BYD77D 220 − − V BYD77E 275 − − V BYD77F 330 − − V BYD77G 440 − − V VR = VRRMmax; see Fig.14 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.14 − − 100 µA − − 25 ns − − 50 ns reverse current reverse recovery time BYD77A to D BYD77E to G 1999 Nov 15 UNIT when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.18 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL Cd BYD77 series PARAMETER diode capacitance CONDITIONS f = 1 MHz; VR = 0 V; see Fig.15 BYD77A to D BYD77E to G dI R -------dt maximum slope of reverse recovery current BYD77A to D BYD77E to G when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.17 MIN. TYP. MAX. UNIT − 50 − pF − 40 − pF − − 4 A/µs − − 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 VALUE UNIT 30 K/W 150 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16. For more information please refer to the “General Part of associated Handbook”. 1999 Nov 15 4 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD77 series GRAPHICAL DATA MCD596 MCD598 3 handbook, halfpage 4 handbook, halfpage IF(AV) I F(AV) (A) (A) 3 2 2 1 1 0 0 0 100 0 200 o Ttp ( C) 100 BYD77A to D a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. BYD77E to G a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MCD597 Ttp ( o C) Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MCD595 1.0 1.2 handbook, halfpage 200 handbook, halfpage I F(AV) (A) I F(AV) (A) 0.8 0.5 0.4 0 0 0 100 Tamb ( o C) 0 200 100 BYD77A to D a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.16. Switched mode application. BYD77E to G a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.16. Switched mode application. Fig.4 Fig.5 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 1999 Nov 15 5 Tamb ( o C) 200 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD77 series MCD593 20 handbook, full pagewidth δ= 0.05 I FRM (A) 0.1 10 0.2 0.5 1 0 10 -2 10 -1 10 0 10 1 10 2 10 3 t p (ms ) 10 4 BYD77A to D Ttp = 105 °C; Rth j-tp = 30 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD591 handbook,20 full pagewidth δ= 0.05 I FRM (A) 0.1 10 0.2 0.5 1 0 -2 10 10 -1 10 0 10 1 10 2 10 3 t p (ms ) 10 4 BYD77E to G Ttp = 105°C; Rth j-tp = 30 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1999 Nov 15 6 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD77 series MCD592 10 handbook, full pagewidth I FRM (A) δ= 0.05 0.1 5 0.2 0.5 1 0 -2 10 10 -1 10 0 10 1 10 2 10 3 10 4 t p (ms ) BYD77A to D Tamb = 60 °C; Rth j-a = 150 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD590 handbook,10 full pagewidth I FRM (A) δ= 0.05 0.1 5 0.2 0.5 1 0 -2 10 10 -1 10 0 10 1 10 2 10 3 t p (ms ) 10 4 BYD77E to G Tamb = 60 °C; Rth j-a = 150 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1999 Nov 15 7 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD77 series MGC530 MGC529 2 handbook, halfpage 2 handbook, halfpage a=3 2.5 2 1.57 1.42 P (W) a=3 2.5 2 1.57 1.42 P (W) 1 1 0 0 0 1 IF(AV) (A) 2 1 0 BYD77A to D a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. 2 IF(AV) (A) BYD77E to G a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. MCD594 MGC531 10 10 handbook, halfpage handbook, halfpage IF (A) IF (A) 8 8 6 6 4 4 2 2 0 0 0 1 VF (V) 2 0 1 2 VF (V) 3 BYD77A to D Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. BYD77E to G Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Fig.12 Forward current as a function of forward voltage; maximum values. Fig.13 Forward current as a function of forward voltage; maximum values. 1999 Nov 15 8 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD77 series MGA853 3 10halfpage handbook, MCD608 2 10 handbook, halfpage IR (µA) Cd (pF) 102 10 A, B, C, D 10 E, F, G 1 100 0 1 200 T j ( o C) 1 10 2 10 10 3 V R (V) f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.14 Reverse current as a function of junction temperature; maximum values. Fig.15 Diode capacitance as a function of reverse voltage; typical values. 50 IF halfpage ndbook, dI F dt t rr 4.5 10% t 50 dI R dt 2.5 100% IR 1.25 MGC499 MSB213 Dimensions in mm. Fig.16 Printed-circuit board for surface mounting. 1999 Nov 15 Fig.17 Reverse recovery definitions. 9 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers handbook, full pagewidth BYD77 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.18 Test circuit and reverse recovery time waveform and definition. 1999 Nov 15 10 MAM057 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD77 series PACKAGE OUTLINE Hermetically sealed glass surface mounted package; ImplotecTM(1) technology; 2 connectors SOD87 k a (2) D1 L L H DIMENSIONS (mm are the original dimensions) UNIT D D1 H L mm 2.1 2.0 2.0 1.8 3.7 3.3 0.3 D 0 1 2 mm scale Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD87 100H03 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-31 99-06-04 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Nov 15 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 135002/03/pp12 Date of release: 1999 Nov 15 Document order number: 9397 750 06272