DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV26 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of February 1994 1996 May 30 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD57 package, using a high temperature alloyed construction. • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. 2/3 page k(Datasheet) This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM047 Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER CONDITIONS IF(AV) − 200 V BYV26B − 400 V − 600 V BYV26D − 800 V BYV26E − 1000 V BYV26F − 1200 V BYV26G − 1400 V BYV26A − 200 V BYV26B − 400 V continuous reverse voltage BYV26C − 600 V BYV26D − 800 V BYV26E − 1000 V BYV26F − 1200 V BYV26G − 1400 V − 1.00 A − 1.05 A − 0.65 A − 0.68 A BYV26A to E − 10.0 A BYV26F and G − 9.6 A average forward current BYV26F and G average forward current BYV26A to E BYV26F and G IFRM UNIT BYV26C BYV26A to E IF(AV) MAX. repetitive peak reverse voltage BYV26A VR MIN. repetitive peak forward current 1996 May 30 Ttp = 85 °C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 °C; PCB mounting (see Fig.19); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 Ttp = 85 °C; see Figs 6 and 7 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL IFRM BYV26 series PARAMETER repetitive peak forward current CONDITIONS MIN. MAX. UNIT Tamb = 60 °C; see Figs 8 and 9 BYV26A to E − 6.0 A BYV26F and G − 6.4 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 30 A ERSM non-repetitive peak reverse avalanche energy − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C MIN. TYP. MAX. − − 1.3 V − − 1.3 V − − 2.50 V − − 2.15 V BYV26A 300 − − V BYV26B 500 − − V IR = 400 mA; Tj = Tj max prior to surge; inductive load switched off see Figs 12 and 13 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYV26A to E CONDITIONS IF = 1 A; Tj = Tj max; see Figs 14 and 15 BYV26F and G VF forward voltage BYV26A to E IF = 1 A; see Figs 14 and 15 BYV26F and G V(BR)R IR trr reverse avalanche breakdown voltage IR = 0.1 mA BYV26C 700 − − V BYV26D 900 − − V BYV26E 1100 − − V BYV26F 1300 − − V BYV26G 1500 − − V VR = VRRMmax; see Fig.16 − − 5 µA VR = VRRMmax; Tj = 165 °C; see Fig.16 − − 150 µA − − 30 ns reverse current reverse recovery time BYV26A to C when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.20 − − 75 ns − − 150 ns − 45 − pF BYV26D and E − 40 − pF BYV26F and G − 35 − pF BYV26D and E BYV26F and G Cd diode capacitance BYV26A to C 1996 May 30 UNIT f = 1 MHz; VR = 0 V; see Figs 17 and 18 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL dI R -------dt PARAMETER BYV26 series CONDITIONS maximum slope of reverse recovery when switched from IF = 1 A to VR ≥ 30 V and current dI F/dt = −1 A/µs; BYV26A to C see Fig.21 BYV26D and E BYV26F and G MIN. TYP. MAX. UNIT − − 7 A/µs − − 6 A/µs − − 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 VALUE UNIT 46 K/W 100 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19. For more information please refer to the “General Part of associated Handbook”. 1996 May 30 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series GRAPHICAL DATA MSA855 1 MLB533 2 handbook, halfpage handbook, halfpage 20 15 10 lead length (mm) I F(AV) I F(AV) (A) (A) lead length 10 mm 1 0.5 0 0 100 0 T tp ( oC) BYV26A to E a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.2 T tp ( oC) 200 BYV26F and G a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 MSA856 1 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). MLB534 1 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) (A) 0.5 0.5 0 0 0 100 o Tamb ( C) 200 0 BYV26A to E a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19. Switched mode application. Fig.4 100 0 200 o Tamb ( C) 200 BYV26F and G a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19. Switched mode application. Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). 1996 May 30 100 Fig.5 5 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series MSA860 12 I FRM (A) 10 δ = 0.05 8 6 0.1 4 0.2 0.5 2 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV26A to E. Ttp = 85°C; Rth j-tp = 46 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MLB535 10 I FRM (A) δ = 0.05 8 6 0.1 4 0.2 0.5 2 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV26F and G. Ttp = 85°C; Rth j-tp = 46 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 30 6 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series MSA859 6 I FRM (A) δ = 0.05 5 4 0.1 3 0.2 2 0.5 1 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV26A to E Tamb = 60 °C; Rth j-a = 100 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MLB536 8 I FRM (A) δ = 0.05 6 0.1 4 0.2 2 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV26F and G Tamb = 60 °C; Rth j-a = 100 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 30 7 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series MSA854 3 MLB532 3 P (W) P (W) a = 3 2.5 2 1.57 2 a=3 2 2.5 2 1.57 1.42 1.42 1 1 0 0 0 0.5 1 I F(AV) (A) 0 0.5 1 I F(AV) (A) BYV26A to E a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. BYV26F and G a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. MSA857 200 MLB599 200 handbook, halfpage handbook, halfpage Tj ( oC) Tj ( oC) 100 100 A B C D F E 0 0 400 800 V R (V) 0 1200 BYV26A to E Solid line = VR. Dotted line = VRRM; δ = 0.5. 1000 VR (V) 2000 BYV26F and G Solid line = VR. Dotted line = VRRM; δ = 0.5. Fig.12 Maximum permissible junction temperature as a function of reverse voltage. 1996 May 30 0 G Fig.13 Maximum permissible junction temperature as a function of reverse voltage. 8 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series MSA853 MBD427 8 8 handbook, halfpage handbook, halfpage IF (A) IF (A) 6 6 4 4 2 2 0 0 0 2 4 6 VF (V) 8 0 BYV26A to E Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. 2 4 VF (V) 6 BYV26F and G Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Fig.14 Forward current as a function of forward voltage; maximum values. Fig.15 Forward current as a function of forward voltage; maximum values. MGC550 103 handbook, halfpage MSA858 10 2 handbook, halfpage IR (µA) Cd (pF) 102 BYV26A,B,C 10 BYV26D,E 10 1 1 0 100 Tj (°C) 1 200 102 V R (V) 10 3 BYV26A to E f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.16 Reverse current as a function of junction temperature; maximum values. 1996 May 30 10 Fig.17 Diode capacitance as a function of reverse voltage, typical values. 9 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series MBD437 10 2 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 10 2 3 1 1 10 2 10 10 3 V R (V) 10 4 MGA200 BYV26F and G f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.18 Diode capacitance as a function of reverse voltage, typical values. DUT handbook, full pagewidth Fig.19 Device mounted on a printed-circuit board. IF (A) + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.20 Test circuit and reverse recovery time waveform and definition. 1996 May 30 10 MAM057 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series IF halfpage ndbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.21 Reverse recovery definitions. 1996 May 30 11 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers PACKAGE OUTLINE handbook, full pagewidth k 3.81 max 28 min Dimensions in mm. The marking band indicates the cathode. , 4.57 max BYV26 series a 28 min 0.81 max MBC880 Fig.22 SOD57. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 30 12