DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D130 BZV85 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 11 Philips Semiconductors Product specification Voltage regulator diodes BZV85 series FEATURES DESCRIPTION • Total power dissipation: max. 1.3 W Medium-power voltage regulator diodes in hermetically sealed leaded glass SOD66 (DO-41) packages. The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 33 types with nominal working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75). • Tolerance series: approx. ±5% • Working voltage range: nom. 3.6 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 60 W. handbook, halfpage k a MAM241 APPLICATIONS The diodes are type branded. • Stabilization purposes. Fig.1 Simplified outline (SOD66; DO-41) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. IF continuous forward current − IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.3 see Table “Per type” Ptot total power dissipation MAX. UNIT 500 mA tp = 10 ms; half sinewave; Tj = 25 °C prior to surge see Table “Per type” Tamb = 25 °C; lead length 10 mm; note 1 − 1 W note 2 − 1.3 W tp = 100 µs; square wave; Tj = 25 °C prior to surge − 60 W PZSM non-repetitive peak reverse power dissipation Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Notes 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. 2. If the leads are kept at Ttp = 55 °C at 4 mm from body. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF 1999 May 11 PARAMETER forward voltage CONDITIONS IF = 50 mA; see Fig.4 2 MAX. UNIT 1 V DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEST DIODE CAP. TEMP. COEFF. CURRENT Cd (pF) SZ (mV/K) at IZtest IZtest (mA) at f = 1 MHz; see Figs 5 and 6 VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MIN. MAX. 3V6 3.4 3.8 3V9 3.7 4V3 MAX. MAX. VR (V) MAX. NON-REPETITIVE PEAK REVERSE CURRENT IZSM at tp = 100 µs; Tamb = 25 °C at tp = 10 ms; Tamb = 25 °C MAX. (A) MAX. (mA) 3 15 −3.5 −1.0 60 450 50 1.0 8.0 2000 4.1 15 −3.5 −1.0 60 450 10 1.0 8.0 1950 4.0 4.6 13 −2.7 0 50 450 5 1.0 8.0 1850 4V7 4.4 5.0 13 −2.0 +0.7 45 300 3 1.0 8.0 1800 5V1 4.8 5.4 10 −0.5 +2.2 45 300 3 2.0 8.0 1750 5V6 5.2 6.0 7 0 2.7 45 300 2 2.0 8.0 1700 6V2 5.8 6.6 4 0.6 3.6 35 200 2 3.0 7.0 1620 6V8 6.4 7.2 3.5 1.3 4.3 35 200 2 4.0 7.0 1550 7V5 7.0 7.9 3 2.5 5.5 35 150 1 4.5 5.0 1500 8V2 7.7 8.7 5 3.1 6.1 25 150 0.7 5.0 5.0 1400 9V1 8.5 9.6 5 3.8 7.2 25 150 0.7 6.5 4.0 1340 10 9.4 10.6 8 4.7 8.5 25 90 0.2 7.0 4.0 1200 11 10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1100 12 11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1000 13 12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 900 15 13.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 760 16 15.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 700 18 16.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 600 20 18.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 540 22 20.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 500 24 22.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450 27 25.1 28.9 40 20.1 27.5 8 50 0.05 19 1.2 400 30 28.0 32.0 45 22.4 32.0 8 50 0.05 21 1.2 380 Product specification MAX. BZV85 series MIN. Philips Semiconductors BZV85CXXX WORKING VOLTAGE VZ (V) at IZtest Voltage regulator diodes 1999 May 11 Per type Tj = 25 °C unless otherwise specified. DIODE CAP. TEMP. COEFF. TEST Cd (pF) SZ (mV/K) CURRENT at IZtest IZtest (mA) at f = 1 MHz; VR = 0 V see Figs 5 and 6 REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MIN. MAX. 33 31.0 35.0 36 34.0 39 37.0 43 MAX. 4 MIN. MAX. 45 24.8 35.0 38.0 50 27.2 41.0 60 29.6 40.0 46.0 75 47 44.0 50.0 51 48.0 54.0 56 52.0 62 68 75 VR (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM at tp = 100 µs; Tamb = 25 °C at tp = 10 ms; Tamb = 25 °C MAX. (A) MAX. (mA) MAX. MAX. 8 45 0.05 23 1.0 350 39.9 8 45 0.05 25 0.9 320 43.0 6 45 0.05 27 0.8 296 34.0 48.3 6 40 0.05 30 0.7 270 100 37.4 52.5 4 40 0.05 33 0.6 246 125 40.8 56.5 4 40 0.05 36 0.5 226 60.0 150 46.8 63.0 4 40 0.05 39 0.4 208 58.0 66.0 175 52.2 72.5 4 35 0.05 43 0.4 186 64.0 72.0 200 60.5 81.0 4 35 0.05 48 0.35 171 70.0 80.0 225 66.5 88.0 4 35 0.05 53 0.3 161 Philips Semiconductors DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest Voltage regulator diodes 1999 May 11 BZV85CXXX WORKING VOLTAGE VZ (V) at IZtest Product specification BZV85 series Philips Semiconductors Product specification Voltage regulator diodes BZV85 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 4 mm; see Fig.2 110 K/W Rth j-a thermal resistance from junction to ambient lead length10 mm; note 1 175 K/W Note 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. GRAPHICAL DATA MBG929 103 handbook, full pagewidth Rth j-tp (K/W) 102 δ=1 0.75 0.50 0.33 0.20 10 0.10 0.05 0.02 0.01 0 1 10−2 10−1 tp T 1 10 102 103 Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm. 1999 May 11 5 δ= tp T tp (ms) 104 Philips Semiconductors Product specification Voltage regulator diodes BZV85 series MBG802 102 handbook, halfpage MBG925 300 handbook, halfpage IZSM (A) IF (mA) (1) 10 200 (1) (2) 1 10−1 1 10 VZnom (V) 0 102 0 (1) tp = 10 µs; half sinewave; Tamb = 25 °C. (2) tp = 10 ms; half sinewave; Tamb = 25 °C. (1) Tj = 200 °C. (2) Tj = 25 °C. Fig.3 Fig.4 Non-repetitive peak reverse current as a function of the nominal working voltage. MBG926 0.5 1.0 VF (V) Forward current as a function of forward voltage; typical values. MBG800 100 10 handbook, halfpage handbook, halfpage SZ (mV/K) (2) 100 SZ (mV/K) (1) 80 10 (2) 9V1 5 8V2 7V5 6V8 60 6V2 5V6 5V1 0 (3) 40 4V7 4V3 20 3V6 3V9 −5 0 0 25 IZ (mA) 50 1 Tj = 25 to 150 °C. For types above 7.5 V the temperature coefficient is independent of current; see Table “Per type”. 102 (2) Typical values. (3) Minimum values. Temperature coefficient as a function of working current; typical values. 1999 May 11 VZnom (V) IZ = IZtest; Tj = 25 to 150 °C. (1) Maximum values. BZV85-C3V6 to C10. Fig.5 10 Fig.6 6 Temperature coefficient as a function of nominal working voltage. Philips Semiconductors Product specification Voltage regulator diodes BZV85 series PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD66 (1) k a b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.81 2.6 4.8 28 0 2 4 mm scale Note 1. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC SOD66 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 DO-41 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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