COMCHIP CDBUR0230R

SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBUR0230R(RoHs Device)
Io = 200 mA
V R = 30 Volts
0603(1608)
Features
0.071(1.80)
0.063(1.60)
Low reverse current.
Designed for mounting on small surface.
0.039(1.00)
0.031(0.80)
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
0.033(0.85)
Case: 0603(1608) standard package,
molded plastic.
0.027(0.70)
0.018(0.45) Typ.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
0.028(0.70) Typ.
Weight: 0.003 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Repetitive peak reverse voltage
Symbol Min Typ Max Unit
V RRM
35
V
Reverse voltage
VR
30
V
Average forward current
IO
200
mA
I FSM
1
A
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
Storage temperature
T STG
Junction temperature
Tj
-40
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
I F = 200 mA
VF
0.6
V
Reverse current
V R = 10 V
IR
30
uA
REV:A
QW-A1068
Page 1
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBUR0230R)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
1m
1000
O
Reverse current ( A )
100
1u
O
25 C
100n
C
O
C
75 C
O
25
O
10u
O
-25 C
10n
-25
1
O
12
C
5
O
C
10
75
Forward current (mA )
125 C
100u
0.1
1n
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
5
15
20
25
30
Reverse voltage (V)
Forward voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Fig.4 - Current derating curve
100
Average forward current(%)
Capacitance between terminals ( P F)
10
10
100
80
60
40
20
0
1
0
5
10
15
20
Reverse voltage (V)
25
30
0
25
50
75
100
125
O
Ambient temperature ( C)
REV:A
QW-A1068
Page 2