COMCHIP CEFM102-G

SMD Efficient Fast Recovery Rectifier
CEFM101-G Thru CEFM105-G (RoHS Device)
Reverse Voltage: 50 ~ 600 Volts
Forward Current: 1.0 Amp
Features:
Ideal for surface mount applications
Easy pick and place
MINI SMA
Plastic package has Underwriters Lab.
0.161 (4.10)
0.146 (3.70)
flammability classification 94V-0.
0.012 (0.30) Typ.
Built-in strain relief
0.071 (1.80)
0.055 (1.40)
Super fast recovery time for high efficient
Low forward voltage drop
0.110 (2.80)
0.094 (2.40)
Mechanical Data:
Case: Mini-SMA/SOD-123 molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Approx. Weight: 0.04 gram
0.063 (1.60)
0.055 (1.40)
0.035 (0.90) Typ.
0.035 (0.90) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics:
Parameter
Symbol
CEFM101-G
VRRM
50
100
200
400
600
V
Max. DC Blocking Voltage
VDC
50
100
200
400
600
V
Max. RMS Voltage
VRMS
35
70
140
280
420
V
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
IFSM
30
A
Max. Average Forward Current
Io
1.0
A
Max. Instantaneous Forward Voltage
at 1.0A
VF
0.875
1.1
1.25
V
Reverse recovery time
Trr
25
35
50
nS
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25oC
Ta=100oC
IR
Max. Repetitive Peak Reverse Voltage
Max. Thermal Resistance (Note1)
Max. Operating Junction Temperature
Storage Temperature
R
CEFM102-G CEFM103-G CEFM104-G CEFM105-G
5.0
250
42
JL
Unit
uA
o C/W
Tj
-55 to +155
o
C
TSTG
-55 to +150
o
C
Note1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.
ā€œ-Gā€ suffix designates RoHS compliant Version
www.comchiptech.com
Page1
SMD Efficient Fast Recovery Rectifier
Rating and Characteristic Curves (CEFM101-G thru CEFM105-G)
Fig.2 - Forward Characteristics
Fig. 1 - Reverse Characteristics
100
10
CEFM101-G-103-G
Forward Current (A)
Reverse current (uA)
Tj=125 C
10
Tj=75 C
1.0
Tj=25 C
0.1
CEFM104-G
1.0
0.1
CEFM105-G
0.01
Tj=25 C
Pulse width 300uS
4% duty cycle
0. 01
0
0.001
15
30 45 60 75 90 105 120 135 150
0 0.2
0.4
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig. 3 - Junction Capacitance
Fig.4 - Non Repetitive Forward
Surge Curre
35
50
Tj=25 C
25
20
CEFM101-103
15
10
8.3mS Single Half Sine
Wave JEDEC methode
Peak Surge Forward Current (A)
f=1MHz and applied
4VDC reverse voltage
30
Junction Capacitance (pF)
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
CEFM104-105
5
40
30
Tj=25 C
20
10
0
0
0.01
0.1
1.0
10
100
1
Reverse Voltage (V)
5
10
50
1 00
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
1.4
trr
10
NONINDUCTIVE
|
|
|
|
|
|
|
|
+0.5A
( )
(+)
25Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
1
NONINDUCTIVE
Average Forward Current ( A )
50
NONINDUCTIVE
0
-0.25A
(+)
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1.2
1.0
0.8
0.6
0.4
Single Phase
Half Wave 60Hz
0.2
00
25
50
75
100
125
150
175
1cm
SET TIME BASE FOR
Ambient Temperature ( C)
50 / 10ns / cm
ā€œ-Gā€ suffix designates RoHS compliant Version
www.comchiptech.com
Page2