SM5010 series Crystal Oscillator Module ICs OVERVIEW The SM5010 series are crystal oscillator module ICs. They incorporate oscillator and output buffer circuits, employing built-in oscillator capacitors and feedback resistors with excellent frequency response, eliminating the need for external components to form a stable crystal oscillator. There are 7 oscillator configurations available for design and application optimization. FEATURES ■ 7 types of oscillation circuit structure For fundamental oscillator • 5010A×× :Simple structure with low frequency variation • 5010B×× :Low crystal current type with RD built-in oscillation circuit • 5010CL× :Oscillation stop function built-in • 5010DN× :External capacitors, CG and CD required • 5010EA× :Low current consumption type For 3rd overtone oscillator • 5010F×× :Suitable for round blank • 5010H×× :External resistor, Rf required ■ ■ ■ ■ ■ ■ ■ ■ ■ 2.7 to 5.5V operating supply voltage Capacitors CG, CD built-in Inverter amplifier feedback resistor built-in Output duty level • TTL level: AK×, BK×, HK× • CMOS level: AN×, AH×, BN×, BH×, CL×, DN×, EA×, FN×, FH×, HN× Oscillator frequency output (fO, fO/2, fO/4, fO/8, fO/16 determined by internal connection) Standby function Pull-up resistor built-in 8-pin SOP (SM5010×××S) Chip form (CF5010×××) SERIES CONFIGURATION For Fundamental Oscillator Version1 CF5010AN1 CF5010AN2 CF5010AN3 CF5010AN4 CF5010AK1 CF5010AH1 CF5010AH2 CF5010AH3 CF5010AH4 CF5010BN1 CF5010BN2 CF5010BN3 CF5010BN4 CF5010BN5 CF5010BK1 CF5010BH1 CF5010BH2 CF5010BH3 CF5010BH4 CF5010CL1 CF5010CL2 CF5010CL3 CF5010CL4 CF5010CL5 CF5010DN1 CF5010EA1 CF5010EA2 Operating supply voltage range [V] Built-in capacitance CG CD [pF] [pF] RD [Ω] Output current Output duty (VDD = 5V) level [mA] CMOS 2.7 to 5.5 29 29 – 16 4.5 to 5.5 29 29 – 16 TTL 2.7 to 5.5 29 29 – 4 CMOS CMOS/TTL CMOS 2.7 to 5.5 22 22 820 16 4.5 to 5.5 22 22 820 16 TTL 2.7 to 5.5 22 22 820 4 CMOS 2.7 to 5.5 18 18 – 16 CMOS 2.7 to 5.5 – – 820 16 CMOS 2.7 to 5.5 10 15 820 4 CMOS CMOS/TTL Output frequency fO fO/2 fO/4 fO/8 fO fO fO/2 fO/4 fO/8 fO fO/2 fO/4 fO/8 fO/16 fO fO fO/2 fO/4 fO/8 fO fO/2 fO/4 fO/8 fO/16 fO fO fO/2 INHN input level (VDD = 5V) Standby mode Oscillator stop function Output state TTL No High impedance TTL No High impedance TTL No High impedance TTL No High impedance TTL No High impedance TTL No High impedance CMOS Yes High impedance TTL No High impedance TTL Yes LOW 1. Package devices have designation SM5010×××S. SEIKO NPC CORPORATION —1 SM5010 series SERIES CONFIGURATION For 3rd Overtone Oscillator Operating supply voltage range [V] Version Built-in capacitance gm ratio CG [pF] CF5010FNA CF5010FNC 2.7 to 5.5 CF5010FND CF5010FNE 1.00 CD [pF] Rf [kΩ] 13 15 4.2 11 17 3.1 13 17 2.2 8 15 2.2 4.5 to 5.5 CF5010FHA 13 15 4.2 CF5010FHC 11 17 3.1 13 17 2.2 8 15 2.2 4.5 to 5.5 CF5010FHD 1.00 CF5010FHE Output current (VDD = 5V) [mA] Output duty level 16 CMOS 4 CMOS CF5010HN1 4.5 to 5.5 1.17 13 17 200 16 CMOS CF5010HK1 4.5 to 5.5 1.17 13 17 200 16 TTL ORDERING INFORMATION Device Package SM5010×××S 8-pin SOP CF5010×××–1 Chip form PACKAGE DIMENSIONS (Unit: mm) • 8-pin SOP 0.4 0.2 6.2 0.3 4.4 0.2 0.15 + 0.1 − 0.05 0.695typ 1.5 0.1 0.05 0.05 5.2 0.3 1.27 0 to 10 0.10 0.4 0.1 0.12 M SEIKO NPC CORPORATION —2 SM5010 series PAD LAYOUT PINOUT (Unit: µm) (Top view) VDD Q (920,1180) HA5010 Y (0,0) INHN XT XTN VSS INHN 1 8 VDD XT 2 7 NC XTN 3 6 NC VSS 4 5 Q X Chip size: 0.92 × 1.18mm Chip thickness: 300 ± 30µm Chip base: VDD level PIN DESCRIPTION and PAD DIMENSIONS Pad dimensions [µm] Number Name I/O Description X Y 1 INHN I Output state control input. Standby mode when LOW, pull-up resistor built in. In the case of the 5010CL×, the oscillator stops and Power-saving pull-up resistor is built-in to reduce current consumption at standby mode. 195 174.4 2 XT I Amplifier input. 385 174.4 3 XTN O Amplifier output. 575 174.4 4 VSS – Ground 765 174.4 5 Q O Output. Output frequency (fO, fO/2, fO/4, fO/8, fO/16) determined by internal connection 757.6 1017.6 6 NC – No connection – – 7 NC – No connection – – 8 VDD – Supply voltage 165.4 1014.6 Crystal oscillator connection pins. Crystal oscillator connected between XT and XTN SEIKO NPC CORPORATION —3 SM5010 series BLOCK DIAGRAM For Fundamental Oscillator ■ 5010A××, B××, CL×, DN×, EA× series VDD VSS XTN CG Rf CD RD XT 1/2 1/2 1/2 1/2 Q INHN For 3rd Overtone Oscillator ■ 5010F××, H×× series VDD VSS XTN CG XT Rf CD Q INHN SEIKO NPC CORPORATION —4 SM5010 series FUNCTIONAL DESCRIPTION Standby Function 5010AH×, AK×, AN×, BH×, BK×, BN×, DN×, FN×, FH×, HN×, HK× series When INHN goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop. 5010CL× series When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance. 5010EA× series When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes LOW. Version INHN Q Oscillator AH×, AK×, AN×, BH×, BK×, BN×, DN×, FH×, FH×, HN×, HK× series HIGH (or open) Any fO, fO/2, fO/4, fO/8 or fO/16 output frequency Normal operation LOW High impedance Normal operation HIGH (or open) Any fO, fO/2, fO/4, fO/8 or fO/16 output frequency Normal operation LOW High impedance Stopped HIGH (or open) Either fO or fO/2 output frequency Normal operation LOW LOW Stopped CL× series EA× series Power-saving Pull-up Resistor (CL series only) The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW (standby state), the pull-up resistance becomes large to reduce the current consumption during standby. SEIKO NPC CORPORATION —5 SM5010 series SPECIFICATIONS Absolute Maximum Ratings VSS = 0V Parameter Symbol Condition Rating Unit Supply voltage range VDD −0.5 to +7.0 V Input voltage range VIN −0.5 to VDD + 0.5 V Output voltage range VOUT −0.5 to VDD + 0.5 V Operating temperature range Topr −40 to +85 °C Storage temperature range Tstg Output current Power dissipation Chip form −65 to +150 8-pin SOP −55 to +125 °C AH×, BH×, FH×, EA× 10 IOUT AN×, AK×, BN×, BK×, CL×, DN×, FN×, HN×, HK× 25 PD 8-pin SOP 500 mW Rating Unit mA Recommended Operating Conditions 3V operation VSS = 0V Parameter Symbol Version Condition Operating supply voltage VDD All version 2.7 to 3.6 V Input voltage VIN All version VSS to VDD V 5010AN× 5010AH× −10 to +70 5010BN× 5010BH× Operating temperature TOPR −20 to +80 5010CL× °C 5010DN1 −10 to +70 5010EA× 5010FN× 5010AN× 2 to 30 5010AH× 2 to 16 5010BN× 2 to 30 5010BH× Operating frequency f 5010CL× 5010DN1 CL ≤ 15pF 2 to 16 MHz 2 to 30 5010EA× 5010FN× 22 to 40 SEIKO NPC CORPORATION —6 SM5010 series 5V operation VSS = 0V Parameter Symbol Version Operating supply voltage VDD Input voltage VIN Condition Rating Unit All version 4.5 to 5.5 V All version VSS to VDD V 5010AN× 5010AK× 5010AH× 5010BN× −40 to +85 5010BK× 5010BH× 5010CL× 5010DN1 Operating temperature TOPR 5010EA× 5010FN× 5010FH× CL ≤ 15pF, f = 2 to 40MHz −10 to +70 CL ≤ 50pF, 30MHz ≤ f ≤ 50MHz −20 to +80 CL ≤ 15pF, 50MHz ≤ f ≤ 70MHz −15 to +75 CL ≤ 15pF, 30MHz ≤ f ≤ 50MHz −20 to +80 CL ≤ 15pF, 50MHz ≤ f ≤ 60MHz −15 to +75 5010HN1 −40 to +85 5010HK1 5010AN× 5010AK× 5010AH× 5010BN× 5010BK× 5010BH× 5010CL× Operating frequency f 5010DN1 5010EA× 5010FN× 5010FH× °C CL ≤ 15pF, f = 2 to 30MHz CL ≤ 50pF CL ≤ 15pF CL ≤ 50pF 2 to 30 CL ≤ 15pF CL ≤ 50pF MHz CL ≤ 15pF, Ta = − 40 to + 85°C 2 to 40 CL ≤ 50pF, Ta = − 20 to + 80°C 30 to 50 CL ≤ 15pF, Ta = − 15 to + 75°C 50 to 70 CL ≤ 15pF, Ta = − 20 to + 80°C 30 to 50 CL ≤ 15pF, Ta = − 15 to + 75°C 50 to 60 5010HN1 CL ≤ 50pF 5010HK1 CL ≤ 15pF 22 to 50 SEIKO NPC CORPORATION —7 SM5010 series Electrical Characteristics 5010AN×, BN×, DN× series 3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter Symbol Condition HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA Unit min typ max 2.1 2.4 – V V LOW-level output voltage VOL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA – 0.3 0.4 HIGH-level input voltage VIH INHN 2.0 – – V LOW-level input voltage VIL INHN – – 0.5 V Output leakage current IZ Q: Measurement cct 2, INHN = LOW, VDD = 3.6V VOH = VDD – – 10 VOL = VSS – – 10 Current consumption IDD Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 30MHz 5010×N1 – 5 10 5010×N2 – 3.5 7 5010×N3 – 2.5 5 5010×N4 – 2 4 5010×N5 – 2 4 µA mA RUP2 Measurement cct 4 40 100 250 kΩ Feedback resistance Rf Measurement cct 5 80 200 500 kΩ Oscillator amplifier output resistance RD Design value 5010B×× 690 820 940 Ω 5010A×× 26 29 32 5010B×× 20 22 24 5010A×× 26 29 32 5010B×× 20 22 24 INHN pull-up resistance CG Built-in capacitance Design value. A monitor pattern on a wafer is tested. CD pF 5010AN×, AK×, BN×, BK×, DN× series 5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol Condition HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA LOW-level output voltage VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA HIGH-level input voltage VIH INHN LOW-level input voltage VIL INHN IZ Q: Measurement cct 2, INHN = LOW, VDD = 5.5V Output leakage current Current consumption IDD Measurement cct 3, load cct 1, INHN = open, CL = 50pF, f = 30MHz Measurement cct 3, load cct 2, INHN = open, CL = 15pF, f = 30MHz INHN pull-up resistance Unit min typ max 3.9 4.2 – V – 0.3 0.4 V 2.0 – – V V – – 0.8 VOH = VDD – – 10 VOL = VSS – – 10 5010×N1 – 15 30 5010×N2 – 9 18 5010×N3 – 6 12 5010×N4 – 5 10 5010×N5 – 5 10 5010×K1 – 10 20 µA mA RUP2 Measurement cct 4 40 100 250 kΩ Feedback resistance Rf Measurement cct 5 80 200 500 kΩ Oscillator amplifier output resistance RD Design value 5010B×× 690 820 940 Ω 5010A×× 26 29 32 5010B×× 20 22 24 5010A×× 26 29 32 5010B×× 20 22 24 CG Built-in capacitance CD Design value. A monitor pattern on a wafer is tested. pF SEIKO NPC CORPORATION —8 SM5010 series 5010AH×, BH× series 3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 2.7V, IOH = 2mA 2.1 2.4 – V LOW-level output voltage VOL Q: Measurement cct 2, VDD = 2.7V, IOL = 2mA – 0.3 0.5 V HIGH-level input voltage VIH INHN 2.0 – – V LOW-level input voltage VIL INHN V Output leakage current Current consumption IZ IDD Q: Measurement cct 2, INHN = LOW, VDD = 3.6V Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 16MHz – – 0.5 VOH = VDD – – 10 VOL = VSS – – 10 5010×H1 – 3 6 µA 5010×H2 – 2 4 5010×H3 – 1.5 3 5010×H4 – 1.5 2.5 mA RUP2 Measurement cct 4 40 100 250 kΩ Feedback resistance Rf Measurement cct 5 80 200 500 kΩ Oscillator amplifier output resistance RD Design value 5010B×× 690 820 940 Ω 5010A×× 26 29 32 5010B×× 20 22 24 5010A×× 26 29 32 5010B×× 20 22 24 INHN pull-up resistance CG Design value. A monitor pattern on a wafer is tested. Built-in capacitance CD pF 5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 4mA 3.9 4.2 – V LOW-level output voltage VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 4mA – 0.3 0.5 V HIGH-level input voltage VIH INHN 2.0 – – V LOW-level input voltage VIL INHN – – 0.8 V VOH = VDD – 10 IZ Q: Measurement cct 2, INHN = LOW, VDD = 5.5V – Output leakage current VOL = VSS – – 10 5010×H1 – 9 18 Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 30MHz 5010×H2 – 6 12 5010×H3 – 5 10 5010×H4 – 4 8 Current consumption IDD µA mA RUP2 Measurement cct 4 40 100 250 kΩ Feedback resistance Rf Measurement cct 5 80 200 500 kΩ Oscillator amplifier output resistance RD Design value 5010B×× 690 820 940 Ω 5010A×× 26 29 32 5010B×× 20 22 24 5010A×× 26 29 32 5010B×× 20 22 24 INHN pull-up resistance CG Design value. A monitor pattern on a wafer is tested. Built-in capacitance CD pF SEIKO NPC CORPORATION —9 SM5010 series 5010CL× series 3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −20 to +80°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA 2.2 2.4 – V LOW-level output voltage VOL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage VIH INHN 0.7VDD – – V LOW-level input voltage VIL INHN – – 0.3VDD V VOH = VDD – 10 IZ Q: Measurement cct 2, INHN = LOW, VDD = 3.6V – Output leakage current VOL = VSS – – 10 5010CL1 – 5 10 5010CL2 – 3.5 7 5010CL3 – 2.5 5 5010CL4 – 2 4 5010CL5 – 2 4 – – 5 µA 2 4 15 MΩ 40 100 250 kΩ 80 200 500 kΩ 16 18 20 16 18 20 Current consumption Standby current INHN pull-up resistance IDD IST RUP1 Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 30MHz Measurement cct 6, INHN = LOW Built-in capacitance Rf CG mA Measurement cct 4 RUP2 Feedback resistance µA Measurement cct 5 Design value. A monitor pattern on a wafer is tested. CD pF 5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA 4.0 4.2 – V LOW-level output voltage VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA – 0.3 0.4 V HIGH-level input voltage VIH INHN 0.7VDD – – V LOW-level input voltage VIL INHN – – 0.3VDD V VOH = VDD – 10 IZ Q: Measurement cct 2, INHN = LOW, VDD = 5.5V – Output leakage current VOL = VSS – – 10 5010CL1 – 15 30 5010CL2 – 9 18 5010CL3 – 6 12 5010CL4 – 5 10 5010CL5 – 5 10 – – 10 µA 1 2 8 MΩ 40 100 250 kΩ 80 200 500 kΩ 16 18 20 16 18 20 Current consumption Standby current INHN pull-up resistance IDD IST RUP1 Measurement cct 3, load cct 1, INHN = open, CL = 50pF, f = 30MHz Measurement cct 6, INHN = LOW Built-in capacitance Rf CG CD mA Measurement cct 4 RUP2 Feedback resistance µA Measurement cct 5 Design value. A monitor pattern on a wafer is tested. pF SEIKO NPC CORPORATION —10 SM5010 series 5010EA× series 3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 2.7V, IOH = 2mA 2.1 2.4 – V LOW-level output voltage VOL Q: Measurement cct 2, VDD = 2.7V, IOL = 2mA – 0.3 0.5 V HIGH-level input voltage VIH INHN 2.0 – – V LOW-level input voltage VIL INHN – – 0.5 V – 4 8 IDD Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 30MHz 5010EA1 Current consumption 5010EA2 – 2.5 5 INHN pull-up resistance mA RUP2 Measurement cct 4 40 100 250 kΩ Feedback resistance Rf Measurement cct 5 80 200 500 kΩ Oscillator amplifier output resistance RD Design value 690 820 940 Ω 9 10 11 13 15 17 Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. CD pF 5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 3.2mA 3.9 4.2 – V LOW-level output voltage VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 3.2mA – 0.3 0.4 V HIGH-level input voltage VIH INHN 2.0 – – V LOW-level input voltage VIL INHN – – 0.8 V Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 30MHz 5010EA1 – 6 12 IDD1 5010EA2 – 5 10 5010EA1 – 9 18 IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 15pF, f = 40MHz 5010EA2 – 6 12 RUP2 Measurement cct 4 40 100 250 kΩ Feedback resistance Rf Measurement cct 5 80 200 500 kΩ Oscillator amplifier output resistance RD Design value 690 820 940 Ω 9 10 11 13 15 17 mA Current consumption INHN pull-up resistance Built-in capacitance CG CD Design value. A monitor pattern on a wafer is tested. pF SEIKO NPC CORPORATION —11 SM5010 series 5010FN× series 3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA 2.2 2.4 – V LOW-level output voltage VOL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage VIH INHN 2.0 – – V LOW-level input voltage VIL INHN – – 0.5 V VOH = VDD – 10 IZ Q: Measurement cct 2, INHN = LOW, VDD = 3.6V – Output leakage current VOL = VSS – – 10 5010FNA, FNC f = 30MHz – 8 16 IDD Measurement cct 3, load cct 1, INHN = open, CL = 15pF 5010FND f = 40MHz – 10 20 40 100 250 5010FNA 3.57 4.2 4.83 5010FNC 2.63 3.1 3.57 5010FND 1.87 2.2 2.53 5010FNA 11.7 13 14.3 5010FNC 9.9 11 12.1 5010FND 11.7 13 14.3 5010FNA 13.5 15 16.5 5010FNC 15.3 17 18.7 5010FND 15.3 17 18.7 Current consumption INHN pull-up resistance Feedback resistance RUP Rf CG Design value. A monitor pattern on a wafer is tested. Built-in capacitance CD mA Measurement cct 4 Measurement cct 5 µA kΩ kΩ pF SEIKO NPC CORPORATION —12 SM5010 series 5V operation: VDD = 4.5 to 5.5V, VSS = 0V 30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 70MHz: Ta = −15 to +75°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA 3.9 4.2 – V LOW-level output voltage VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA – 0.3 0.4 V HIGH-level input voltage VIH INHN 2.0 – – V LOW-level input voltage VIL INHN – – 0.8 V VOH = VDD – 10 IZ Q: Measurement cct 2, INHN = LOW, VDD = 5.5V – Output leakage current VOL = VSS – – 10 IDD1 Measurement cct 3, load cct 1, INHN = open, CL = 15pF 5010FNE f = 70MHz – 25 50 5010FNA, FNC f = 40MHz – 23 45 IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 50pF 5010FND f = 50MHz – 25 50 40 100 250 5010FNA 3.57 4.2 4.83 5010FNC 2.63 3.1 3.57 5010FND 1.87 2.2 2.53 5010FNE 1.87 2.2 2.53 5010FNA 11.7 13 14.3 5010FNC 9.9 11 12.1 5010FND 11.7 13 14.3 5010FNE 7.2 8 8.8 5010FNA 13.5 15 16.5 5010FNC 15.3 17 18.7 5010FND 15.3 17 18.7 5010FNE 13.5 15 16.5 Current consumption INHN pull-up resistance Feedback resistance RUP Rf Measurement cct 4 Measurement cct 5 CG Design value. A monitor pattern on a wafer is tested. Built-in capacitance CD µA mA kΩ kΩ pF SEIKO NPC CORPORATION —13 SM5010 series 5010FH× series 5V operation: VDD = 4.5 to 5.5V, VSS = 0V 30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted. Rating Parameter Symbol Condition HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 4mA LOW-level output voltage VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 4mA HIGH-level input voltage VIH INHN LOW-level input voltage VIL INHN Output leakage current Current consumption INHN pull-up resistance Feedback resistance IZ IDD RUP Rf Q: Measurement cct 2, INHN = LOW, VDD = 5.5V Measurement cct 3, load cct 1, INHN = open, CL = 15pF Measurement cct 5 CG Design value. A monitor pattern on a wafer is tested. Built-in capacitance CD typ max 3.9 4.2 – V – 0.3 0.5 V 2.0 – – V V – – 0.8 VOH = VDD – – 10 VOL = VSS – – 10 5010FHA, FHC f = 40MHz – 13 26 5010FHD f = 50MHz – 15 30 5010FHE f = 60MHz – 17 34 40 100 250 5010FHA 3.57 4.2 4.83 5010FHC 2.63 3.1 3.57 5010FHD 1.87 2.2 2.53 5010FHE 1.87 2.2 2.53 5010FHA 11.7 13 14.3 Measurement cct 4 Unit min 5010FHC 9.9 11 12.1 5010FHD 11.7 13 14.3 5010FHE 7.2 8 8.8 5010FHA 13.5 15 16.5 5010FHC 15.3 17 18.7 5010FHD 15.3 17 18.7 5010FHE 13.5 15 16.5 µA mA kΩ kΩ pF 5010HN×, HK× series 5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Rating Condition min typ max Unit HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA 3.9 4.2 – V LOW-level output voltage VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA – 0.3 0.4 V HIGH-level input voltage VIH INHN 2.0 – – V LOW-level input voltage VIL INHN – – 0.8 V Output leakage current IZ Q: Measurement cct 2, INHN = LOW, VDD = 5.5V VOH = VDD – – 10 VOL = VSS – – 10 IDD1 Measurement cct 3, load cct 2, INHN = open, CL = 15pF, f = 50MHz 5010HK1 – 20 40 IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 50pF, f = 50MHz 5010HN1 – 25 50 RUP Measurement cct 4 40 100 250 kΩ Rf Measurement cct 5 80 200 500 kΩ Current consumption INHN pull-up resistance Feedback resistance Built-in capacitance CG CD µA mA Design value. A monitor pattern on a wafer is tested. 11.7 13 14.3 15.3 17 18.7 pF SEIKO NPC CORPORATION —14 SM5010 series Switching Characteristics 5010AN×, BN×, DN× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max Output rise time tr1 Measurement cct 6, load cct 1, CL = 15pF, 0.1VDD to 0.9VDD – 3.0 6.0 ns Output fall time tf1 Measurement cct 6, load cct 1, CL = 15pF, 0.9VDD to 0.1VDD – 3.0 6.0 ns Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF, f = 30MHz 40 – 60 % – – 100 ns – – 100 ns Output duty cycle1 Duty Output disable delay time tPLZ Output enable delay time tPZL Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. 5010AN×, AK×, BN×, BK×, DN× series 5V operation/Duty level: CMOS (5010AN×, BN×, DN1) VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Output rise time Symbol tr1 tr2 Output fall time tf1 tf2 Output duty cycle1 Duty Output disable delay time tPLZ Output enable delay time tPZL Condition Unit min typ max Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 2.0 4.0 CL = 50pF – 4.0 8.0 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 2.0 4.0 CL = 50pF – 4.0 8.0 45 – 55 % – – 100 ns – – 100 ns Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 50pF, f = 30MHz Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF ns ns 1. The duty cycle characteristic is checked the sample chips of each production lot. 5V operation/Duty level: TTL (5010×K1, AN2, AN3, AN4, BN2, BN3, BN4, BN5) VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max Output rise time tr3 Measurement cct 6, load cct 2, CL = 15pF, 0.4V to 2.4V – 1.5 3.0 ns Output fall time tf3 Measurement cct 6, load cct 2, CL = 15pF, 2.4V to 0.4V – 1.5 3.0 ns Output duty cycle1 Duty Measurement cct 6, load cct 2, VDD = 5.0V, Ta = 25°C, CL = 15pF, f = 30MHz 45 – 55 % Output disable delay time tPLZ – – 100 ns Output enable delay time tPZL – – 100 ns Measurement cct 7, load cct 2, VDD = 5.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. SEIKO NPC CORPORATION —15 SM5010 series 5010AH×, BH× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max Output rise time tr1 Measurement cct 6, load cct 1, CL = 15pF, 0.1VDD to 0.9VDD – 8 16 ns Output fall time tf1 Measurement cct 6, load cct 1, CL = 15pF, 0.9VDD to 0.1VDD – 8 16 ns Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF, f = 16MHz 40 – 60 % – – 100 ns – – 100 ns Output duty cycle1 Duty Output disable delay time tPLZ Output enable delay time tPZL Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Output rise time Symbol tr1 tr2 Output fall time tf1 tf2 Output duty cycle1 Duty Output disable delay time tPLZ Output enable delay time tPZL Condition Unit min typ max Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 5 10 CL = 50pF – 13 26 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 5 10 CL = 50pF – 13 26 45 – 55 % – – 100 ns – – 100 ns Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF, f = 30MHz Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF ns ns 1. The duty cycle characteristic is checked the sample chips of each production lot. SEIKO NPC CORPORATION —16 SM5010 series 5010CL× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V, VSS = 0V, Ta = −20 to +80°C unless otherwise noted. Rating Parameter Output rise time Symbol tr1 tr4 Output fall time tf1 tf4 Output duty cycle1 Duty Output disable delay time2 tPLZ Output enable delay time2 tPZL Condition Unit min typ max Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 2.0 4.0 CL = 30pF – 3.0 6.0 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 2.0 4.0 CL = 30pF – 3.0 6.0 45 – 55 % – – 100 ns – – 100 ns Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF, f = 30MHz Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF ns ns 1. The duty cycle characteristic is checked the sample chips of each production lot. 2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Output rise time Symbol tr1 tr2 Output fall time tf1 tf2 Output duty cycle1 Duty Output disable delay time2 tPLZ Output enable delay time2 tPZL Condition Unit min typ max Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 1.5 3.0 CL = 50pF – 4.0 8.0 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 1.5 3.0 CL = 50pF – 4.0 8.0 40 – 60 % – – 100 ns – – 100 ns Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 50pF, f = 30MHz Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF ns ns 1. The duty cycle characteristic is checked the sample chips of each production lot. 2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. SEIKO NPC CORPORATION —17 SM5010 series 5010EA× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max Output rise time tr1 Measurement cct 6, load cct 1, CL = 15pF, 0.1VDD to 0.9VDD – 8 16 ns Output fall time tf1 Measurement cct 6, load cct 1, CL = 15pF, 0.9VDD to 0.1VDD – 8 16 ns Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF, f = 30MHz 40 – 60 % – – 100 ns – – 100 ns Output duty cycle1 Duty Output disable delay time2 tPLZ Output enable delay time2 tPZL Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. 2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Output rise time Symbol tr1 tr2 Output fall time tf1 tf2 Output duty cycle1 Duty1 Duty2 Output disable delay time2 tPLZ Output enable delay time2 tPZL Condition Unit min typ max Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 5 10 CL = 50pF – 13 26 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 5 10 CL = 50pF – 13 26 Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF f = 30MHz 45 – 55 f = 40MHz 40 – 60 – – 100 ns – – 100 ns ns ns % Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. 2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. SEIKO NPC CORPORATION —18 SM5010 series 5010FN× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max Output rise time tr1 Measurement cct 6, load cct 1, CL = 15pF, 0.1VDD to 0.9VDD – 3.0 6.0 ns Output fall time tf1 Measurement cct 6, load cct 1, CL = 15pF, 0.9VDD to 0.1VDD – 3.0 6.0 ns Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF, f = 40MHz 40 – 60 % – – 100 ns – – 100 ns Output duty cycle1 Duty Output disable delay time tPLZ Output enable delay time tPZL Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V, VSS = 0V 30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 70MHz: Ta = −15 to +75°C unless otherwise noted. Rating Parameter Output rise time Symbol tr1 tr2 Output fall time tf1 tf2 Output duty cycle1 Duty Output disable delay time tPLZ Output enable delay time tPZL Condition Unit min typ max Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 1.5 3.0 CL = 50pF – 3.0 6.0 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 1.5 3.0 CL = 50pF – 3.0 6.0 CL = 50pF f = 50MHz 45 – 55 CL = 15pF f = 70MHz 40 – 60 – – 100 ns – – 100 ns Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C ns ns % Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. SEIKO NPC CORPORATION —19 SM5010 series 5010FH× series 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V, VSS = 0V 30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted. Rating Parameter Output rise time Symbol tr1 tr2 Output fall time tf1 tf2 Output duty cycle1 Duty Output disable delay time tPLZ Output enable delay time tPZL Condition Unit min typ max Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 4 8 CL = 50pF – 11 21 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 4 8 CL = 50pF – 11 21 Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF f = 50MHz 45 – 55 f = 60MHz 40 – 60 – – 100 ns – – 100 ns ns ns % Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF 1. The duty cycle characteristic is checked the sample chips of each production lot. 5010HN× series 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Output rise time Symbol tr1 tr2 Output fall time tf1 tf2 Output duty cycle1 Duty Output disable delay time tPLZ Output enable delay time tPZL Condition Unit min typ max Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 1.5 3.0 CL = 50pF – 3.0 6.0 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 1.5 3.0 CL = 50pF – 3.0 6.0 45 – 55 % – – 100 ns – – 100 ns Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 50pF, f = 50MHz Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF ns ns 1. The duty cycle characteristic is checked the sample chips of each production lot. SEIKO NPC CORPORATION —20 SM5010 series 5010HK× series 5V operation/Duty level: TTL VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol tr3 Output rise time tr5 tf3 Output fall time tf5 Output duty cycle1 Duty Output disable delay time tPLZ Output enable delay time tPZL Condition Unit min typ max Measurement cct 6, load cct 2, 0.4V to 2.4V CL = 15pF – 1.2 2.4 CL = 50pF – 2.0 5.0 Measurement cct 6, load cct 2, 2.4V to 0.4V CL = 15pF – 1.2 2.4 CL = 50pF – 2.0 5.0 45 – 55 % – – 100 ns – – 100 ns Measurement cct 6, load cct 2, VDD = 5.0V, Ta = 25°C, CL = 15pF, f = 50MHz Measurement cct 7, load cct 2, VDD = 5.0V, Ta = 25°C, CL = 15pF ns ns 1. The duty cycle characteristic is checked the sample chips of each production lot. Current consumption and Output waveform with NPC’s standard crystal for Fundamental oscillator Cb f [MHz] R [Ω] L [mH] Ca [fF] Cb [pF] 30 17.2 4.36 6.46 2.26 40 16.8 2.90 5.47 2.08 for 3rd overtone oscillator L Ca R f [MHz] R [Ω] L [mH] Ca [fF] Cb [pF] 30 18.62 16.24 1.733 5.337 40 20.53 11.34 1.396 3.989 50 22.17 7.40 1.370 4.105 60 15.37 3.83 1.836 5.191 70 25.42 4.18 1.254 5.170 SEIKO NPC CORPORATION —21 SM5010 series MEASUREMENT CIRCUITS Measurement cct 1 Measurement cct 4 VDD VDD C1 Signal Generator XT RUP1 = Q VDD IPR (VIL = 0V) R2 R1 VSS INHN VSS RUP2 = VDD VIH (V IH = 0.7V DD) IPR V VIH VIL VOH 0V Q output 2.0VP−P , 10MHz sine wave input signal (3V operation) 3.5VP−P , 10MHz sine wave input signal (5V operation) C1 : 0.001µF R1 : 50Ω R2 : 5010AN×, BN×, DN×, AK×, BK× 3V operation: 263Ω 5V operation: 245Ω 5010FN×, HN×, HK× 3V operation: 275Ω 5V operation: 245Ω 5010CL× 3V operation: 275Ω 5V operation: 250Ω 5010EA×, AH×, BH× 3V operation: 1050Ω 5010EA×, AH×, BH×, FH× 5V operation: 975Ω A IPR Measurement cct 5 VDD XT Rf = XTN VDD IRf VSS A IRf Measurement cct 2 Measurement cct 6 IZ, IOL VDD IZ A Q CG VDD XT INHN VSS IST A V VOL Rfo X'tal Q XTN INHN CD Measurement cct 3 VSS Crystal oscillation CG, CD: 22pF (5010DN×) Rfo: 3.0kΩ (5010H××) A IDD Measurement cct 7 VDD C1 Signal Generator XT R1 Q VSS VDD Signal Generator XT R1 Q VSS INHN 2.0VP−P , 30MHz sine wave input signal (3V operation) 3.5VP−P , 30MHz sine wave input signal (5V operation) C1 : 0.001µF R1 : 50Ω R1 : 50Ω SEIKO NPC CORPORATION —22 SM5010 series Load cct 1 Load cct 2 Q output R CL Q output (Including probe capacitance) CL (Including probe capacitance) CL = 15pF : DUTY , IDD , tr1 , tf1 CL = 30pF : tr4 , tf4 CL = 50pF : tr2 , tf2 CL = 15pF : DUTY, IDD , tr3 , tf3 CL = 50pF : tr5 , tf5 R = 400Ω Switching Time Measurement Waveform Output duty level (CMOS) 0.9VDD Q output 0.9VDD 0.1VDD 0.1VDD DUTY measurement voltage (0.5V DD ) TW tr tf Output duty level (TTL) Q output 2.4V 2.4V 0.4V 0.4V DUTY measurement voltage (1.4V ) TW tr tf Output duty cycle (CMOS) DUTY measurement voltage (0.5V DD) Q output TW T DUTY= TW/ T 100 (%) Output duty cycle (TTL) DUTY measurement voltage (1.4V ) Q output TW T DUTY= TW/ T 100 (%) SEIKO NPC CORPORATION —23 SM5010 series Output Enable/Disable Delay INHN VIH VIL tPLZ tPZL Q output INHN input waveform tr = tf 10ns Note (CL×/EA× series only): when the device is in standby, the oscillator stops. When standby is released, the oscillator starts and stable oscillator output occurs after a short delay. SEIKO NPC CORPORATION —24 SM5010 series Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: [email protected] NC0015DE 2006.04 SEIKO NPC CORPORATION —25