SMD Efficient Fast Recovery Rectifier CFRA151-G Thru CFRA157-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 1.0 Amp Features: Ideal for surface mount applications Easy pick and place DO-214AC (SMA) Plastic package has Underwriters Lab. flammability classification 94V-0. 0.067(1.70) 0.051(1.29) Fast recovery time: 150 ~ 500nS 0.110(2.79) 0.086(2.18) Low leakage current 0.180(4.57) 0.160(4.06) Mechanical Data: Case: SMA/DO-214AC molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.04 gram 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) 0.059(1.50) 0.035(0.89) 0.008(0.20) 0.004(0.10) 0.209(5.31) 0.185(4.70) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics: Symbol CFRA 151-G CFRA 152-G CFRA 153-G CFRA 154-G CFRA 155-G CFRA 156-G CFRA 157-G Unit VRRM 50 100 200 400 600 800 1000 V Max. DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Max. RMS Voltage VRMS 35 70 140 280 420 560 700 V Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 50 A Max. Average Forward Current Io 1.5 A Max. Instantaneous Forward Voltage at 1.0A VF 1.3 V Reverse recovery time Trr Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC IR Parameter Max. Repetitive Peak Reverse Voltage Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature R 250 100 5.0 50 53 JL 500 nS uA o C/W Tj -55 to +155 o C TSTG -55 to +150 o C Note1: Thermal resistance from junction to ambient. “-G” suffix designates RoHS compliant Version www.comchiptech.com Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CFRA151-G thru CFRA157-G) Fig. 1 - Reverse Characteristics Fig.2 - Forward Characteristics 100 Forward current ( A ) Reverse Current ( uA ) 1000 Tj=125 C 100 10 10 1 0.1 Tj=25 C 1.0 Tj=25 C Pulse width 300uS 4% duty cycle 0.1 0 0.01 20 40 60 80 100 0 0.4 Percent of Rated Peak Reverse Voltage (%) 1.6 2.0 Fig. 4 - Non Repetitive Forward Surge Current 140 50 8.3mS Single Half Sine Wave JEDEC methode Peak Surge Forward Current (A) 120 Junction Capacitance (pF) 1.2 Forward Voltage(V) Fig. 3 - Junction Capacitance Tj=25 C f=1.0MHz Vsig=50mV p-p 100 0.8 80 60 40 20 40 30 Tj=25 C 20 10 0 0 0.1 1.0 10 100 1000 1 Reverse Voltage (V) 5 | | | | | | | | ( ) (+) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1 NONINDUCTIVE 0 -0.25A (+) OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 1 00 Fig. 6 - Current Derating Curve 2.1 Average Forward Current ( A ) trr 10 NONINDUCTIVE +0.5A 25Vdc (approx.) 50 Number of Cycles at 60Hz Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics 50 NONINDUCTIVE 10 -1.0A 1.8 1.5 1.2 0.9 0.6 Single Phase Half Wave 60Hz 0.3 00 25 50 75 100 125 150 175 1cm SET TIME BASE FOR Ambient Temperature ( C) 50 / 10ns / cm “-G” suffix designates RoHS compliant Version www.comchiptech.com Page2