CHR2291 RoHS COMPLIANT 12-17GHz Integrated Down Converter GaAs Monolithic Microwave IC Description LO The CHR2291 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Q GM GB VDM VDL GX VGA The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. I RF Typical on wafer measurement: Conversion Gain & Image suppression @ IF=1& 1.5GHz Main Features 14 Broadband performances : 12-17GHz 12 10 10 dB conversion gain 8 2LO Frequency 6 3.5dB noise figure, for IF>0.1GHz 4 2 10dBm LO input power (dB) • • • • • • • -8dBm RF input power (1dB gain comp.) 0 -2 -4 Low DC power consumption, [email protected] -6 -8 -10 Chip size : 2.49 X 2.13 X 0.10 mm -12 -14 -16 11,0 12,0 13,0 14,0 15,0 16,0 17,0 RF Frequency (GHz) Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit FRF RF frequency range 12 17 GHz FLO LO frequency range 5.25 7.75 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain +10 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHR22911192 - 11 Jul 11 1/6 Specifications subject to change without notice united monolithic semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 18,0 12-17GHz Integrated Down Converter CHR2291 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V ,Idl=50mA, Idm=50mA Symbol Parameter Min Typ Max Unit FRF RF frequency range 12 17 GHz FLO LO frequency range 5.25 7.75 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain (1) +10 dB NF Noise Figure, for IF>0.1GHz (1) 3.5 dB PLO LO Input power +10 dBm Image Suppression 15 dBc Input power at 1dB gain compression -8 dBm Img Sup P1dB LO VSWR Input LO VSWR (1) 2.0:1 RF VSWR Input RF VSWR (1) 2.0:1 Id Bias current (2) 100 mA (1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances for Idm= 50mA and Idl= 50mA Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum drain bias voltage 4.0 V Id Maximum drain bias current 180 mA Vg Gate bias voltage -2.0 to +0.4 V Vdg Maximum drain to gate voltage ( Vd– Vg) +5 V Pin Maximum peak input power overdrive (2) +15 dBm Tch Maximum channel temperature 175 °C Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : : DSCHR22911192 - 11 Jul 11 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 12-17GHz Integrated Down Converter CHR2291 Typical On-wafer Measurements Bias Conditions: Vdm= Vdl= 3.5 V, Vgm= -0.7V, Vgb= -0.4V, Vgx= -0.6V, Vga= -0.4V 14 12 10 8 2LO Frequency 6 4 (dB) 2 0 -2 -4 -6 -8 -10 -12 -14 -16 11,0 12,0 13,0 14,0 15,0 16,0 17,0 18,0 RF Frequency (GHz) Conversion gain & Image suppression with a 90° IQ c ombiner @ IF=1 & 1.5GHz 10 8 6 4 2 0 -2 -4 -6 Freq. RF= 15GHz Freq LO= 7GHz -8 -10 Conversion Gain_I (dB) IF_power_I (dBm) -12 Conversion Gain_Q (dB) IF_power_Q (dBm) -14 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 Input RF power (dBm) Input RF compression by channel Ref. : : DSCHR22911192 - 11 Jul 11 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 12-17GHz Integrated Down Converter CHR2291 Typical On-board Measurements Bias Conditions: Vdm= Vdl= 3.5 V, Vgm= -0.7V, Vgb= -0.4V, Vgx= -0.6V, Vga= -0.4V 32 LO= RF + IF 28 Rejection (dB & dBc) 24 20 16 Gain 12 8 4 RF=12.75GHz RF=14.05GHz RF=15.35GHz 0 -2 -1,5 -1 -0,5 0 0,5 1 1,5 2 IF Frequency (GHz) Conversion Gain & Image Rejection with a 90° IQ com biner Ref. : : DSCHR22911192 - 11 Jul 11 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 12-17GHz Integrated Down Converter CHR2291 Chip Assembly and Mechanical Data LO IN Q OUT To Vgm DC Gate Supply To Vgb DC Gate Supply To Vdm,Vdl DC Drain Supply I OUT To Vgx DC Gate Supply To Vga DC Gate Supply RF IN Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bonding pad positions ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : : DSCHR22911192 - 11 Jul 11 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 12-17GHz Integrated down converter CHR2291 Ordering Information Chip form : CHR2291-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHR22911192 - 11 Jul 11 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice