NE Central W TM Semiconductor Corp. CMST2907A SUPER-MINI PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general purpose and switching applications. SUPER mini TM SOT-323 CASE MAXIMUM RATINGS: (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD 60 60 5.0 600 250 UNITS V V V mA mW TJ,Tstg ΘJA -65 to +150 500 oC oC/W ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125oC VCE=30V, VBE=0.5V IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 75 100 248 UNITS nA µA nA V V V V V V V SYMBOL hFE hFE hFE fT Cob Cib ton td tr toff ts tf TEST CONDITIONS VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA MIN 100 100 50 200 MAX UNITS 300 8.0 30 45 10 40 100 80 30 MHz pF pF ns ns ns ns ns ns All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 R1 249